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NX6350EP29

型号:

NX6350EP29

品牌:

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数:

7 页

PDF大小:

131 K

Preliminary Data Sheet  
NX6350EP Series  
LASER DIODE  
R08DS0066EJ0100  
1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE  
FOR 40GBASE-LR4 APPLICATION  
Rev.1.00  
Aug 14, 2012  
DESCRIPTION  
The NX6350EP series is a 1 270/1 290/1 310/1 330 nm Multiple Quantum  
Well (MQW) structured Distributed Feed-Back (DFB) laser diode with  
InGaAs monitor PIN-PD.  
APPLICATIONS  
40GBASE-LR4  
Bi-Directional 10G SFP+ (CPRI,10G-Ethernet)  
FEATURES  
Optical output power  
Low threshold current  
Differential efficiency  
Wide operating temperature range  
InGaAs monitor PIN-PD  
CAN package  
PO = 8.5 mW  
Ith = 8 mA  
ηd = 0.35 W/A  
TC = 5 to +85°C  
φ 5.6 mm  
6.2 mm  
Focal point  
R08DS0066EJ0100 Rev.1.00  
Aug 14, 2012  
Page 1 of 5  
NX6350EP Series  
Chapter Title  
PACKAGE DIMENSIONS (UNIT: mm)  
*2  
φ
( 5.6)  
*2  
φ
( ꢀ.2)  
*2  
φ
( 3.55)  
1.0 0.1  
BOTTOM VIEW  
1
2
(0.3)*2  
3
Focal Point*1  
Δ
Δ
x = 200  
y = 200  
μ
μ
ꢁ ꢂMA.  
ꢁ ꢂMA.  
φ
2.0  
PIN CONNECTIONS  
1
LD  
2
Reference  
Plane  
3
PD  
φ
ꢀ– 0.ꢀ5  
φ
2.0  
*1 Focal Point: M point to get ꢁaxiꢁuꢁ optical output power froꢁ fiber.  
.
*2 ( ) indicates noꢁinal diꢁension  
R08DS0066EJ0100 Rev.1.00  
Aug 14, 2012  
Page 2 of 5  
NX6350EP Series  
Chapter Title  
ORDERING INFORMATION  
Part Number  
NX6350EPxx∗  
Package  
4-pin CAN with ball lens cap  
Pin Connections  
1
1
LD  
2
3
PD  
Note: 1. The last two digits (“xx”) of Part Number indicates Wavelength Code.  
The relationships between the code and wavelength are as follows.  
WAVELENGTH CODE  
WAVELENGTH (nm)  
27  
29  
31  
33  
1 270  
1 290  
1 310  
1 330  
Remarks 1. The color of lens cap might be observed differently.  
2. The hermetic test will be performed as AQL 1.0%.  
R08DS0066EJ0100 Rev.1.00  
Aug 14, 2012  
Page 3 of 5  
NX6350EP Series  
Chapter Title  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)  
Parameter  
Optical Output Power  
Symbol  
PO  
Ratings  
15  
Unit  
mW  
mA  
V
Forward Current of LD  
IF  
120  
Reverse Voltage of LD  
VR  
2.0  
Forward Current of PD  
IF  
10.0  
mA  
V
Reverse Voltage of PD  
Operating Case Temperature  
Storage Temperature  
VR  
15  
TC  
5 to +85  
40 to +95  
350 (3 sec.)  
85  
°C  
°C  
°C  
%
Tstg  
Tsld  
RH  
Lead Soldering Temperature  
Relative Humidity (noncondensing)  
RECOMMENDED LD DRIVE CURRENT AT MODULE LEVEL  
Parameter  
Bias Current  
Symbol  
Conditions  
TC = 25°C  
MIN.  
TYP.  
MAX.  
Unit  
Ibias  
30  
mA  
ELECTRO-OPTICAL CHARACTERISTICS  
(TC = 5 to +85°C, CW, BOL, unless otherwise specified)  
Parameter  
Symbol  
Conditions  
MIN.  
TYP.  
MAX.  
Unit  
Gb/s  
mW  
V
Signaling Rate  
10.3125  
Optical Output Power  
Operating Voltage  
Threshold Current  
PO  
Vop  
Ith  
8.5  
1.8  
15  
PO = 8.5 mW  
TC = 25°C  
8
mA  
30  
Differential Efficiency  
ηd  
λp  
PO = 8.5 mW, TC = 25°C  
0.28  
0.16  
0.35  
W/A  
nm  
PO = 8.5 mW  
Peak Emission Wavelength  
PO = 8.5 mW NX6350EP27 1 264.5  
1 277.5  
NX6350EP29 1 284.5  
1 297.5  
1 317.5  
1 337.5  
NX6350EP31 1 304.5  
NX6350EP33 1 324.5  
Side Mode Suppression Ratio  
Rise Time  
SMSR  
PO = 8.5 mW  
35  
50  
dB  
ps  
tr  
tf  
20-80% *1  
Fall Time  
80-20% *1  
50  
ps  
Monitor Current  
Monitor Dark Current  
Im  
ID  
VR = 1.5 V, PO = 8.5 mW  
VR = 3.3 V, TC = 25°C  
VR = 3.3 V  
100  
1 000  
10  
μA  
nA  
100  
20  
Monitor PD Terminal  
Capacitance  
Tracking Error *2  
Ct  
VR = 3.3 V, f = 1 MHz  
pF  
dB  
γ
Im = const.  
0.9  
0.9  
(@PO = 8.5 mW, TC = 25°C)  
Notes: 1. 10.3125 Gb/s, PRBS 231 1, NRZ, Duty Cycle = 50%  
2. Tracking Error: γ  
P
o
P
8.5  
o
γ = 10 log  
[dB]  
(mW)  
TC  
= 25°C  
8.5  
TC = –5 to +85°C  
Po  
Im  
0
Im  
(mA)  
R08DS0066EJ0100 Rev.1.00  
Aug 14, 2012  
Page 4 of 5  
NX6350EP Series  
Chapter Title  
SAFETY INFORMATION ON THIS PRODUCT  
SEMICONDUCTOR LASER  
DANGER  
INVISIBLE LASER RADIATION  
AVOID DIRECT EXPOSURE TO BEAM  
AVOID EXPOSURE-Invisible  
OUTPUT POWER  
WAVELENGTH  
mW MAX  
nm  
Laser Radiation is emitted from  
this aperture  
CLASS lllb LASER PRODUCT  
A laser beam is emitted from this diode during operation.  
Warning Laser Beam  
Caution GaAs Products  
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of  
eyesight.  
• Do not look directly into the laser beam.  
• Avoid exposure to the laser beam, any reflected or collimated beam.  
This product uses gallium arsenide (GaAs).  
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe  
the following points.  
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws  
and/or ordinances, dispose of the product as recommended below.  
1. Commission a disposal company able to (with a license to) collect, transport and dispose of  
materials that contain arsenic and other such industrial waste materials.  
2. Exclude the product from general industrial waste and household garbage, and ensure that the  
product is controlled (as industrial waste subject to special control) up until final disposal.  
• Do not burn, destroy, cut, crush, or chemically dissolve the product.  
• Do not lick the product or in any way allow it to enter the mouth.  
R08DS0066EJ0100 Rev.1.00  
Aug 14, 2012  
Page 5 of 5  
Revision History  
NX6350EP Series Data Sheet  
Description  
Summary  
Rev.  
1.00  
Date  
Page  
Aug 14, 2012  
First edition issued  
C - 1  
SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/" for the latest and detailed information.  
Renesas Electronics America Inc.  
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.  
Tel: +1-408-588-6000, Fax: +1-408-588-6130  
Renesas Electronics Canada Limited  
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada  
Tel: +1-905-898-5441, Fax: +1-905-898-3220  
Renesas Electronics Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K  
Tel: +44-1628-651-700, Fax: +44-1628-651-804  
Renesas Electronics Europe GmbH  
Arcadiastrasse 10, 40472 Düsseldorf, Germany  
Tel: +49-211-65030, Fax: +49-211-6503-1327  
Renesas Electronics (China) Co., Ltd.  
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China  
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679  
Renesas Electronics (Shanghai) Co., Ltd.  
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China  
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898  
Renesas Electronics Hong Kong Limited  
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong  
Tel: +852-2886-9318, Fax: +852 2886-9022/9044  
Renesas Electronics Taiwan Co., Ltd.  
13F, No. 363, Fu Shing North Road, Taipei, Taiwan  
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670  
Renesas Electronics Singapore Pte. Ltd.  
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949  
Tel: +65-6213-0200, Fax: +65-6213-0300  
Renesas Electronics Malaysia Sdn.Bhd.  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510  
Renesas Electronics Korea Co., Ltd.  
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea  
Tel: +82-2-558-3737, Fax: +82-2-558-5141  
© 2012 Renesas Electronics Corporation. All rights reserved.  
Colophon 2.2  
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