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IXGT25N250HV

型号：

IXGT25N250HV

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

191 K

下载PDF手册
Advance Technical Information  
VCES = 2500V  
IC110 = 25A  
VCE(sat) ≤ 2.9V  
High Voltage IGBT  
For Capacitor Discharge  
Applications  
IXGT25N250HV  
TO-268  
G
E
Symbol  
Test Conditions  
Maximum Ratings  
C (Tab)  
VCES  
VCGR  
TJ = 25°C to 150°C  
2500  
2500  
V
V
G = Gate  
E = Emiiter  
C
= Collector  
TJ = 25°C to 150°C, RGE = 1MΩ  
Tab = Collector  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC25  
IC110  
ICM  
TC = 25°C  
60  
25  
A
A
A
TC = 110°C  
TC = 25°C, VGE = 20V, 1ms  
200  
Features  
SSOA  
V
GE= 20V, TVJ = 125°C, RG = 20Ω  
ICM = 240  
0.5 • VCES  
A
ꢀHigh Blocking Voltage  
ꢀHigh Voltage Package  
(RBSOA)  
Clamped Inductive Load  
TC = 25°C  
PC  
250  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Advantages  
-55 ... +150  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
ꢀ
High Power Density  
Easy to Mount  
ꢀ
Weight  
4
g
Applications  
ꢀ
Capacitor Discharge  
Pulser Circuits  
Symbol  
Test Conditions  
Characteristic Values  
ꢀ
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
2500  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = 0.8 • VCES, VGE = 0V  
V
V
5.0  
50 μA  
mA  
TJ = 125°C  
1
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 25A, VGE = 15V, Note 1  
IC = 75A  
2.9  
5.2  
V
V
DS100508(11/12)  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXGT25N250HV  
Symbol  
Test Conditions  
Characteristic Values  
TO-268 (VHV) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 50A, VCE = 10V, Note 1  
VGE = 15V, VCE = 20V, Note 1  
16  
26  
S
A
IC(ON)  
240  
Cies  
Coes  
Cres  
2310  
75  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
PIN:  
1 - Gate  
2 - Emitter  
3 - Collector  
23  
Qg  
75  
15  
30  
nC  
nC  
nC  
Qge  
Qgc  
IC = 50A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tr  
td(off)  
tf  
68  
233  
209  
200  
ns  
ns  
ns  
ns  
Resistive Switching Times  
IC = 50A, VGE = 15V  
VCE = 1250V, RG = 5Ω  
RthJC  
0.50 °C/W  
Note  
1. Pulse test, t < 300μs, duty cycle, d < 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGT25N250HV  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
150  
120  
90  
60  
30  
0
250  
200  
150  
100  
50  
VGE = 25V  
20V  
VGE = 25V  
20V  
15V  
10V  
15V  
10V  
0
0
0
7
1
2
3
4
5
6
7
8
0
-50  
4
2
4
6
8
10  
12  
14  
16  
18  
20  
150  
13  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
200  
180  
160  
140  
120  
100  
80  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGE = 25V  
20V  
VGE = 15V  
I C = 150A  
15V  
10V  
I C = 100A  
I C = 50A  
60  
40  
20  
0
2
4
6
8
10  
12  
14  
16  
-25  
0
25  
50  
75  
100  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
10  
9
VGE = 15V  
TJ = - 40ºC  
25ºC  
8
125ºC  
I C = 150A  
7
6
I C = 100A  
I C = 50A  
60  
5
40  
4
20  
3
0
8
9
10  
11  
12  
13  
14  
15  
16  
17  
5
6
7
8
9
10  
11  
12  
VGE - Volts  
VGE - Volts  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXGT25N250HV  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
36  
30  
24  
18  
12  
6
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 1250V  
I
I
C = 50A  
G = 10 mA  
25ºC  
125ºC  
6
4
2
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0
10  
20  
30  
40  
50  
60  
70  
80  
40  
10  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Capacitance  
Fig. 9. Reverse-Bias Safe Operating Area  
10000  
1000  
100  
280  
240  
200  
160  
120  
80  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
G = 20Ω  
dv / dt < 10V / ns  
R
40  
C
res  
0
10  
250  
500  
750  
1000  
1250  
1500  
1750  
2000  
2250  
2500  
0
5
10  
15  
20  
25  
30  
35  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGT25N250HV  
Fig. 13. Resistive Turn-on Rise Time  
Fig. 12. Resistive Turn-on Rise Time  
vs. Junction Temperature  
vs. Collector Current  
700  
600  
500  
400  
300  
200  
680  
600  
520  
440  
360  
280  
200  
RG = 5ꢀ , VGE = 15V  
CE = 1250V  
RG = 5ꢀ , VGE = 15V  
I C = 150A  
TJ = 125ºC  
V
VCE = 1250V  
I C = 50A  
TJ = 25ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
50  
60  
70  
80  
90  
100  
110  
120  
130  
140  
150  
TJ - Degrees Centigrade  
IC - Amperes  
Fig. 15. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Switching Times  
vs. Gate Resistance  
245  
235  
225  
215  
205  
195  
185  
220  
200  
180  
160  
140  
120  
100  
700  
660  
620  
580  
540  
500  
460  
124  
116  
108  
100  
92  
I C = 150A  
I C = 50A, 150A  
t f  
t
d(off) - - - -  
RG = 5ꢀ, VGE = 15V  
t r  
t
d(on) - - - -  
VCE = 1250V  
TJ = 125ºC, VGE = 15V  
VCE = 1250V  
I C = 150A, 50A  
I C = 50A  
84  
76  
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 16. Resistive Turn-off Switching Times  
vs. Collector Current  
Fig. 17. Resistive Turn-off Switching Times  
vs. Gate Resistance  
260  
250  
240  
230  
220  
210  
200  
280  
250  
220  
190  
160  
130  
100  
260  
250  
240  
230  
220  
210  
200  
190  
180  
170  
225  
210  
195  
180  
165  
150  
135  
120  
105  
90  
t f  
t
d(off) - - - -  
TJ = 125ºC, VGE = 15V  
t f  
t
d(off) - - - -  
RG = 5ꢀ, VGE = 15V  
V
CE = 1250V  
VCE = 1250V  
TJ = 25ºC  
TJ = 125ºC  
I C = 150A, 50A  
50  
60  
70  
80  
90  
100  
110  
120  
130  
140  
150  
4
6
8
10  
12  
14  
16  
18  
20  
IC - Amperes  
RG - Ohms  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_25N250(5P-P528)4-21-08-E  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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