IXGL 75N60BU1
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
ISOPLUS 264 OUTLINE
IC = 60A; VCE = 10 V,
Note1
45
60
S
Cies
Coes
Cres
5300
730
190
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qg
Qge
Qgc
248
40
76
nC
nC
nC
td(on)
tri
td(off)
tfi
62
57
ns
ns
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
220 400 ns
150 270 ns
VCE = 0.8 VCES, RG = Roff = 5 Ω
Remarks: Switching times may
increase for V (Clamp) > 0.8 • VCES
higher TJ or inCcEreased RG
,
Eoff
3.3
6
mJ
td(on)
tri
Eon
td(off)
tfi
63
70
5
330
270
ns
ns
mJ
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 5 Ω
Remarks: Switching times may
ns
increase for V (Clamp) > 0.8 • VCES
higher TJ or inCcEreased RG
,
Eoff
6.0
mJ
RthJC
RthCK
0.35 K/W
K/W
0.19
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol
VF
Test Conditions
min. typ. max.
IF = 20A, VGE = 0 V
Note1
1.1
1.2
V
V
IT = 70A
IRM
trr
IF = IC90, V = 0 V, -diF/dt = 100 A/us
VR = 100 VGE
4
A
500
ns
RthJC
0.65 K/W
Notes:
1. Pulse test, t < 300µs,duty cycle < 2%
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
