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2SK2493(2-7B3B)

型号:

2SK2493(2-7B3B)

品牌:

TOSHIBA[ TOSHIBA ]

页数:

6 页

PDF大小:

383 K

2SK2493  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)  
2SK2493  
Chopper Regulator and DCDC Converter Applications  
Unit: mm  
2.5 V gate drive  
Low drainsource ON resistance  
High forward transfer admittance  
: R = 0.08 m(typ.)  
DS (ON)  
: |Y | = 8.0 S (typ.)  
fs  
Low leakage current : I  
= 100 µA (max) (V = 16 V)  
DSS  
DS  
Enhancementmode : V = 0.5~1.1 V (V  
= 10 V, I = 1 mA)  
th  
DS  
D
Maximum Ratings (Ta = 25°C)  
Characteristics  
Drainsource voltage  
Symbol  
Rating  
Unit  
V
16  
16  
V
V
DSS  
Draingate voltage (R  
= 20 k)  
V
GS  
DGR  
Gatesource voltage  
V
±8  
V
GSS  
DC (Note 1)  
I
5
A
D
Drain current  
Pulse (Note 1)  
I
20  
A
DP  
Drain power dissipation (Tc = 25°C)  
Channel temperature  
P
20  
W
°C  
°C  
D
ch  
stg  
JEDEC  
JEITA  
T
150  
55~150  
SC-64  
2-7B1B  
Storage temperature range  
T
TOSHIBA  
Thermal Characteristics  
Weight: 0.36 g (typ.)  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
R
6.25  
125  
°C / W  
°C / W  
th (chc)  
th (cha)  
Thermal resistance, channel to  
ambient  
R
Note 1: Please use devices on condition that the channel temperature is  
below 150°C.  
This transistor is an electrostatic sensitive device.  
Please handle with caution.  
JEDEC  
JEITA  
TOSHIBA  
2-7B3B  
Weight: 0.36 g (typ.)  
1
2002-06-24  
2SK2493  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= ±6.5 V, V = 0 V  
Min  
Typ.  
Max  
Unit  
Gate leakage current  
I
V
V
±10  
100  
µA  
µA  
V
GSS  
GS  
DS  
DS  
Drain cutoff current  
I
= 16 V, V  
= 0 V  
DSS  
(BR) DSS  
GS  
GS  
Drainsource breakdown voltage  
Gate threshold voltage  
V
I
= 10 mA, V  
= 0 V  
16  
0.5  
D
V
V
V
V
V
= 10 V, I = 1 mA  
1.1  
0.12  
0.1  
V
th  
DS  
GS  
GS  
DS  
D
= 2.5 V, I = 2.5 A  
0.08  
0.07  
8.0  
D
Drainsource ON resistance  
R
DS (ON)  
= 4 V, I = 2.5 A  
D
Forward transfer admittance  
Input capacitance  
|Y |  
fs  
= 10 V, I = 2.5 A  
4.0  
S
D
C
C
1200  
110  
380  
iss  
V
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
ns  
Reverse transfer capacitance  
Output capacitance  
DS  
rss  
C
oss  
Rise time  
t
30  
50  
r
Turnon time  
Switching time  
t
on  
Fall time  
t
200  
f
Turnoff time  
t
650  
23  
off  
Total gate charge (Gatesource  
plus gatedrain)  
Q
g
V
16 V, V  
= 5 V, I = 5 A  
nC  
DD  
GS  
D
Gatesource charge  
Q
17  
6
gs  
Gatedrain (“miller”) charge  
Q
gd  
SourceDrain Ratings and Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Continuous drain reverse current  
(Note 1)  
I
5
A
A
DR  
Pulse drain reverse current  
(Note 1)  
I
20  
DRP  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
V
I
I
= 5 A, V  
= 5 A, V  
= 0 V  
= 0 V  
1.7  
V
DSF  
DR  
DR  
GS  
GS  
t
120  
0.12  
ns  
µC  
rr  
dI / dt = 50 A / µs  
DR  
Q
rr  
Marking  
2
2002-06-24  
2SK2493  
3
2002-06-24  
2SK2493  
4
2002-06-24  
2SK2493  
5
2002-06-24  
2SK2493  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
The information contained herein is subject to change without notice.  
6
2002-06-24  
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