IXGR50N160H1
Symbol
Test Conditions
Characteristic Values
ISOPLUS247TM (IXGR) Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ. Max.
gfs
IC = 50A, VCE = 10V, Note 2
VCE = 25V, VGE = 0V, f = 1MHz
18
30
S
Cies
Coes
Cres
3020
257
50
pF
pF
pF
Qg
137
24
nC
nC
nC
Qge
Qgc
IC = 50A, VGE = 15V, VCE = 0.5 • VCES
57
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
53
111
ns
ns
ns
ns
Resistive Switching Times, TJ = 25°C
IC = 50A, VGE = 15V
235
RG = 5Ω, VCE = 0.8 • VCES
4400
52
140
ns
ns
ns
ns
Resistive Switching Times, TJ = 125°C
IC = 50A, VGE = 15V
240
RG = 5Ω, VCE = 0.8 • VCES
4600
RthJC
RthCS
0.52 °C/W
°C/W
0.15
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
VF
IF = 20A, VGE = 0V, Note 2
2.85
2.90
V
V
TJ = 150°C
For conduction power losses only
TJ = 150°C
VT
2.10
V
rFO
40 mΩ
IRM
23
A
IF = 20A, VGE = 0V, VR = 1200V
TJ = 125°C
27
230
400
A
ns
ns
trr
-diF/dt = 450A/μs
TJ = 125°C
RthJC
0.80° C/W
Notes: 1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t ≤ 300 μs, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
