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IXGK210N30PCT1

型号：

IXGK210N30PCT1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

138 K

下载PDF手册
Advance Technical Information  
PolarTM High Speed  
IGBT + PolarTM MOSFET  
in Parallel  
IXGK 210N30PCT1  
VCES  
IC25  
= 300 V  
= 210 A  
C
VCE(sat) ≤ 1.6 V  
For PDP Applications  
G
E
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TO-
(IXG
TJ = 25°C to 150°C  
300  
V
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
D
IC25  
TC = 25°C  
210  
136  
400  
75  
A
A
A
A
S
(TAB)  
IC90  
TC = 90°C  
TJ ≤ 150°C, tp < 300 µs  
Lead current limit  
ICM  
G = Gate  
E = Emitter  
C = Collector  
TAb = Collector  
IC(RMS)  
Features  
SSOA  
VGE = 15 V, TVJ = 150°C, RG = 20 Ω  
ICM = 160  
A
•MOSFET+IGBT in parallel for enhanced  
•pVeerfroyrmlowandcyen,aumsiincgtusrntreOnNgtVhsoltoafgbeoathnd  
(RBSOA)  
Clamped inductive load, VCE < 300 V  
PC  
TC = 25°C  
595  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
faster turn on  
TJM  
Tstg  
•International standard package  
•Low VCE(sat)  
-55 ... +150  
- for minimum on-state conduction  
losses  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
•MOS Gate turn-on  
- drive simplicity  
Md  
Mounting torque  
0.9/6 Nm/lb.in.  
10  
Weight  
g
Applications  
•PDP Screen Drivers  
Symbol  
TestConditions  
Characteristic Values  
•AC motor speed control  
•DC servo and robot drives  
•DC choppers  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VGE(th)  
ICES  
IC = 4 mA, VCE = VGE  
2.5  
5.0  
V
•Uninterruptible power supplies (UPS)  
•Switch-mode and resonant-mode  
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
1
µA  
µA  
200  
•Cpoawpaecritsourpdpilsiecsharge  
IGES  
VCE = 0 V, VGE = 20 V  
VGE = 15V, IC = 80 A  
100  
nA  
VCE(sat)  
1.22  
1.25  
1.63  
1.81  
1.46  
V
V
V
V
TJ = 125°C  
TJ = 125°C  
IC = 160 A  
© 2005 IXYS All rights reserved  
DS99410(06/05)  
IXGK210N30PCT1  
TO-264 AA Outline  
Symbol  
TestConditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25°C, unless otherwise specified)  
gfs  
IC = 80 A VCE = 10 V  
45  
71  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
Cies  
Coes  
Cres  
5650  
618  
147  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
pF  
pF  
Qg  
267  
44  
nC  
nC  
nC  
Qge  
Qgc  
IC = 80 A, VGE = 15 V, VCE = 0.5 VCES  
Dim.  
Millimeter  
Inches  
Max.  
.202  
119  
Min.  
Max.  
Min.  
.190  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.100  
.079  
.114  
.083  
td(on)  
tri  
td(off)  
tfi  
34  
127  
175  
136  
ns  
ns  
ns  
ns  
Resistive load, TJ = 25°C  
IC = 80 A, VGE = 15 V  
b
b1  
b2  
1.12  
2.39  
2.90  
0.53  
25.91  
19.81  
1.42  
2.69  
3.09  
0.83  
26.16  
19.96  
.044  
.094  
.114  
.021  
1.020  
.780  
.056  
.106  
.122  
.033  
1.030  
.786  
c
VCE = 240 V, RG = Roff = 5 Ω  
D
E
e
5.46BSC  
.215BSC  
J
0.00  
0.00  
20.32  
2.29  
0.25  
0.25  
20.83  
2.59  
.000  
.000  
.800  
.090  
.010  
.010  
.820  
.102  
td(on)  
tri  
td(off)  
tfi  
30  
125  
195  
183  
ns  
ns  
ns  
ns  
Resistive load, TJ = 125°C  
IC = 80 A, VGE = 15 V  
K
L
L1  
P
3.17  
3.66  
.125  
.144  
VCE = 240 V, RG = Roff = 5 Ω  
Q
Q1  
R
R1  
6.07  
8.38  
3.81  
1.78  
6.27  
8.69  
4.32  
2.29  
.239  
.330  
.150  
.070  
.247  
.342  
.170  
.090  
RthJC  
RthJC  
RthCK  
IGBT  
0.35 K/W  
0.42 K/W  
K/W  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
MOSFET  
0.15  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
TestConditions  
Min.  
typ.  
Max.  
VGS = 0 V  
36  
A
A
V
ISM  
Repetitive  
90  
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = 25 A  
-di/dt = 100 A/µs  
VR = 100 V  
120  
2.0  
ns  
QRM  
µC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
IXGK210N30PCT1  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
@ 25 C  
º
320  
280  
240  
200  
160  
120  
80  
160  
140  
120  
100  
80  
V
GE  
= 15V  
13V  
V
= 15V  
13V  
GE  
11V  
11V  
9V  
7V  
9V  
60  
40  
20  
40  
7V  
0
0
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
0
-50  
4
1
2
3
4
5
6
7
8
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
Fig. 4. Dependence of VCE( ) on  
sat  
@ 125 ºC  
Temperature  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
160  
140  
120  
100  
80  
V
= 15V  
13V  
GE  
V
= 15V  
GE  
11V  
I
= 160A  
= 80A  
C
9V  
7V  
I
C
60  
40  
I
= 40A  
C
20  
5V  
0
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
8
7
6
5
4
3
2
1
0
160  
140  
120  
100  
80  
= 25ºC  
T
J
I
= 160A  
80A  
C
T = 125 C  
º
40A  
60  
J
25ºC  
40  
-40ºC  
20  
0
6
7
8
9
10  
11  
12  
13  
14  
15  
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
VG E - Volts  
VG E - Volts  
© 2005 IXYS All rights reserved  
IXGK210N30PCT1  
Fig. 8. Resistive Turn-On Rise Time  
vs. Gate Voltage  
Fig. 7. Transconductance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
340  
300  
260  
220  
180  
140  
100  
R
I
= 5Ω  
G
T = -40ºC  
J
= 80A  
C
25ºC  
125ºC  
V
CE  
= 240V  
25ºC < T < 125ºC  
J
0
20  
40  
60  
80 100 120 140 160 180  
10 11 12 13 14 15 16 17 18 19 20  
I C - Amperes  
V G - Volts  
Fig. 9. Resistive Turn-On Rise Time  
vs. Junction Temperature  
Fig. 10. Resistive Turn-On Rise Time  
vs. Collector Current  
130  
120  
110  
100  
90  
140  
130  
120  
110  
100  
90  
I
= 80A  
C
R
= 5Ω  
G
V
GE  
V
CE  
= 15V  
= 240V  
R
V
= 5Ω  
G
80  
= 15V  
80  
GE  
CE  
70  
V
= 240V  
T = 25ºC  
J
70  
I
= 40A  
C
60  
125ºC  
60  
50  
40  
50  
25 35 45 55 65 75 85 95 105 115 125  
40  
45  
50  
55  
60  
65  
70  
75  
80  
T - Degrees Centigrade  
J
I C - Amperes  
Fig. 11. Resistive Turn-On Rise Time  
vs. Gate Resistance  
Fig. 12. Resistive Turn-On Delay Time  
vs. Gate Resistance  
48  
46  
44  
42  
40  
38  
36  
34  
32  
30  
28  
240  
220  
200  
180  
160  
140  
120  
100  
80  
T = 125ºC  
J
V
= 15V  
GE  
CE  
I
= 40A  
C
I
= 80A  
V
= 240V  
C
I
= 80A  
C
T = 125ºC  
J
I
= 40A  
V
= 15V  
C
GE  
CE  
V
= 240V  
60  
40  
4
6
8
10  
R
12 14  
- Ohms  
16 18  
20  
4
6
8
10  
R
12 14  
- Ohms  
16  
18  
20  
G
G
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGK210N30PCT1  
Fig. 13. Resistive Turn-Off Switching  
Time vs. Junction Temperature  
Fig. 14. Resistive Turn-Off Switching  
Time vs. Collector Current  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
240  
220  
200  
180  
160  
140  
120  
100  
80  
t d(off)  
, t f  
- - - -  
T = 25ºC  
J
R
= 5Ω, V  
GE  
= 15V  
G
V
CE  
= 240V  
T = 125ºC  
J
I
= 80A, 40A  
C
t d(off)  
, t f  
- - - -  
R
= 5Ω, V  
GE  
= 15V  
G
60  
V
CE  
= 240V  
40  
25 35 45 55 65 75 85 95 105 115 125  
40  
45  
50  
55  
60  
65  
70  
75  
80  
T J - Degrees Centigrade  
I C - Amperes  
Fig. 16. Reverse-Bias Safe  
Operating Area  
Fig. 15. Resistive Turn-off Switching  
Time vs. Gate Resistance  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
180  
160  
140  
120  
100  
80  
t d(off)  
t f  
T
- - - - - -  
= 125ºC  
J
V
V
= 15V  
GE  
CE  
= 240V  
I
= 40A , 80A  
C
60  
T = 150ºC  
J
40  
R
= 10Ω  
G
dV/dT < 10V/ns  
20  
0
50  
100  
150  
200  
250  
300  
350  
4
6
8
10  
12  
14  
16  
18  
20  
VC E - Volts  
RG- Ohms  
Fig. 17. Gate Charge  
Fig. 18. Capacitance  
16  
14  
12  
10  
8
10000  
1000  
100  
V
= 150V  
CE  
I
I
= 80A  
C
G
C
C
ies  
= 10mA  
oes  
res  
6
4
C
2
f = 1 MHz  
0
0
40  
80  
120  
160  
200  
240  
280  
0
5
10  
15  
20  
25  
30  
35  
40  
Q G - nanoCoulombs  
VC E - Volts  
© 2005 IXYS All rights reserved  
IXGK210N30PCT1  
Fig. 21. Maximum Transient Thermal Resistance  
1.00  
0.10  
0.01  
0.00  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
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