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IXGF36N300

型号：

IXGF36N300

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

251 K

下载PDF手册
VCES = 3000V  
IC25 = 36A  
VCE(sat) ≤ 2.7V  
High Voltage IGBT  
For Capacitor Discharge  
Applications  
IXGF36N300  
( Electrically Isolated Tab)  
ISOPLUS i4-PakTM  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
3000  
V
1
2
Isolated Tab  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
5
1 = Gate  
2 = Emitter  
5 = Collector  
IC25  
IC110  
ICM  
TC = 25°C  
36  
18  
A
A
A
TC = 110°C  
TC = 25°C, VGE = 20V, 1ms  
400  
SSOA  
(RBSOA)  
PC  
V
GE= 20V, TVJ = 125°C, RG = 2Ω  
ICM = 300  
VCE ≤ 0.8 • VCES  
160  
A
Clamped Inductive Load  
TC = 25°C  
Features  
W
ꢀ
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
4000V Electrical Isolation  
High Peak Current Capability  
Low Saturation Voltage  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
1.6 mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Molding Epoxies Meet UL 94 V-0  
Flammability Classification  
FC  
Mounting Force  
20..120/4.5..27  
Nm/lb-in.  
VISOL  
Weight  
50/60Hz, 1 minute  
4000  
5
V~  
g
Applications  
ꢀ
Capacitor Discharge  
Pulser Circuits  
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
3000  
3.0  
Typ.  
Max.  
Advantages  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = 0.8 • VCES, VGE = 0V  
V
ꢀ
High Power Density  
5.0  
V
ꢀ
Easy to Mount  
50 μA  
2 mA  
Note 2 ,TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±200 nA  
VCE(sat)  
IC = 36A, VGE = 15V, Note 1  
IC = 100A  
2.7  
5.2  
V
V
DS99979C(11/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGF36N300  
ISOPLUS i4-PakTM (HV) Outline  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 36A, VCE = 10V, Note 1  
VGE = 15V, VCE = 20V, Note 1  
15  
25  
S
A
IC(ON)  
360  
Cies  
Coes  
Cres  
2690  
123  
34  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
IC = 30A, VGE = 15V, VCE = 600V  
Qg  
136  
21  
nC  
nC  
nC  
Qge  
Qgc  
52  
td(on)  
tr  
td(off)  
tf  
36  
185  
215  
540  
ns  
ns  
ns  
ns  
Pin 1 = Gate  
Resistive Switching Times  
Pin 2 = Emitter  
Pin 3 = Collector  
Tab 4 = Isolated  
IC = 36A, VGE = 15V  
VCE = 1500V, RG = 2Ω  
RthJC  
RthCS  
RthJA  
0.78 °C/W  
°C/W  
0.15  
30  
°C/W  
Notes:  
1. Pulse test, t < 300μs, duty cycle, d < 2%.  
2. Device must be heatsunk for high-temperature leakage current  
measurements to avoid thermal runaway.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGF36N300  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
400  
350  
300  
250  
200  
150  
100  
50  
VGE = 25V  
VGE = 25V  
20V  
15V  
13V  
11V  
20V  
15V  
13V  
9V  
11V  
9V  
7V  
5V  
7V  
5V  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGE = 25V  
VGE = 15V  
20V  
15V  
13V  
11V  
I C = 72A  
9V  
7V  
I C = 36A  
5V  
I C = 18A  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = 25ºC  
I C = 72A  
TJ = 125ºC  
25ºC  
- 40ºC  
36A  
18A  
8
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
5
6
7
9
10  
11  
12  
13  
14  
15  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGF36N300  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 600V  
C = 30A  
I G = 10mA  
I
25ºC  
125ºC  
6
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
0
20  
40  
60  
80  
100  
120  
140  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Capacitance  
Fig. 9. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
350  
300  
250  
200  
150  
100  
50  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
G = 2Ω  
dv / dt < 10V / ns  
R
C
res  
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
500  
750  
1000  
1250  
1500  
1750 2000  
2250  
2500  
2750  
3000  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGF36N300  
Fig. 13. Resistive Turn-on  
Rise Time vs. Drain Current  
Fig. 12. Resistive Turn-on  
Rise Time vs. Junction Temperature  
450  
400  
350  
300  
250  
200  
150  
100  
450  
400  
350  
300  
250  
200  
150  
100  
RG = 2ꢀ , VGE = 15V  
VCE = 1500V  
T
= 125ºC  
J
RG = 2ꢀ , VGE = 15V  
CE = 1500V  
V
I
= 72A  
C
I
= 36A  
C
T
= 25ºC  
J
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
TJ - Degrees Centigrade  
IC - Amperes  
Fig. 14. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 15. Resistive Turn-off  
Switching Times vs. Junction Temperature  
10,000  
1,000  
100  
1,000  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
240  
230  
220  
210  
200  
190  
180  
170  
160  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGE = 15V  
t f  
t
d(off) - - - -  
RG = 2ꢀ, VGE = 15V  
V
CE = 1500V  
V
CE = 1500V  
I
= 72A  
C
I
= 36A  
C
I C = 36A  
100  
I C = 72A  
10  
1000  
1
10  
100  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 17. Resistive Turn-off  
Switching Times vs. Gate Resistance  
10,000  
1,000  
100  
10,000  
1,000  
100  
2400  
2000  
1600  
1200  
800  
400  
0
290  
t f  
t
d(off) - - - -  
t f  
t
d(off) - - - -  
270  
250  
230  
210  
190  
170  
TJ = 125ºC, VGE = 15V  
RG = 2ꢀ, VGE = 15V  
VCE = 1500V  
VCE = 1500V  
I
= 36A  
C
T
= 125ºC  
J
I
= 72A  
C
T
= 25ºC  
J
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
1
10  
100  
1000  
IC - Amperes  
RG - Ohms  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_36N300(8P)11-23-09-D  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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