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IXGT20N120BD1

型号：

IXGT20N120BD1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

492 K

下载PDF手册
High Voltage IGBT with Diode  
VCES  
IC25  
= 1200 V  
= 40 A  
IXGH 20N120BD1  
IXGT 20N120BD1  
VCE(sat) = 3.4 V  
tfi(typ)  
= 160 ns  
Preliminary Data Sheet  
Symbol  
TestConditions  
Maximum Ratings  
TO-247AD  
(IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
G
C
TAB  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
E
TO-268  
(IXGT)  
IC25  
IC110  
ICM  
TC = 25°C  
40  
20  
A
A
A
TC = 110°C  
TC = 25°C, 1 ms  
100  
G
SSOA  
(RBSOA)  
VGE = 15 V, TJ = 125°C, RG = 10 Ω  
Clamped inductive load  
ICM = 80  
@0.8 VCES  
A
E
C (TAB)  
PC  
TC = 25°C  
190  
W
G = Gate  
C = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
E = Emitter  
TAB = Collector  
TJM  
Tstg  
-55 ... +150  
Features  
Md  
Mounting torque  
(TO-247)  
1.13/10 Nm/lb.in.  
z International standard packages:  
JEDEC TO-247AD & TO-268  
z IGBT and anti-parallel FRED for  
resonant power supplies  
- Induction heating  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
260  
6/4  
°C  
°C  
g
Maximum tab temperature  
soldering SMD devices for 10s  
- Rice cookers  
z MOS Gate turn-on  
Weight  
TO-247AD/TO-268  
- drive simplicity  
z Fast Recovery Expitaxial Diode (FRED)  
- soft recovery with low IRM  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Advantages  
z Saves space (two devices in one  
package)  
Easy to mount with 1 screw  
BVCES  
VGE(th)  
IC = 1 µA, VGE = 0 V  
1200  
2.5  
V
V
z
IC = 250 µA, VCE = VGE  
5.0  
(isolated mounting screw hole)  
Reduces assembly time and cost  
z
ICES  
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
150 µA  
µA  
50  
IGES  
VCE = 0 V, VGE = 20 V  
100 nA  
VCE(sat)  
IC  
= 20A, VGE = 15 V  
2.9  
2.8  
3.4  
V
V
Note 2  
TJ=125°C  
© 2003 IXYS All rights reserved  
DS98985E(07/03)  
IXGH 20N120BD1  
IXGT 20N120BD1  
TO-247 AD Outline  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
IC = 20A; VCE = 10 V,  
Note 2.  
12  
18  
S
Cies  
Coes  
Cres  
1700  
105  
39  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
72  
12  
27  
nC  
nC  
nC  
Qge  
Qgc  
IC = 20A, VGE = 15 V, VCE = 0.5 VCES  
td(on)  
tri  
25  
15  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 20 A; VGE = 15 V  
1 = Gate  
2 = Collector  
3 = Emitter  
Tab = Collector  
VCE = 0.8 VCES; RG = Roff = 10 Ω  
td(off)  
150  
280 ns  
Note 1.  
tfi  
Eoff  
160  
2.1  
320 ns  
3.5 mJ  
td(on)  
tri  
25  
18  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 20A; VGE = 15 V  
Eon  
td(off)  
1.9  
270  
mJ  
ns  
VCE = 0.8 VCES; RG = Roff = 10 Ω  
Note 1  
tfi  
Eoff  
360  
3.5  
ns  
mJ  
RthJC  
RthCK  
0.65 K/W  
K/W  
TO-268 Outline  
(TO-247)  
0.25  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
TestConditions  
VF  
IF  
IF = 10 A, VGE = 0 V  
3.3  
10  
V
A
TC = 90°C  
IRM  
trr  
IF = 10 A; -diF/dt = 400 A/µs, VR = 600 V  
VGE = 0 V; TJ = 125°C  
14  
120  
A
ns  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
A1  
A2  
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
trr  
IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V  
40  
ns  
RthJC  
2.5 K/W  
b
b2  
C
1.15  
1.9  
.4  
1.45  
2.1  
.65  
.045 .057  
.75  
.83  
.016 .026  
D
E
E1  
13.80 14.00  
15.85 16.05  
.543 .551  
.624 .632  
.524 .535  
Notes: 1.  
2.  
Switching times may increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG.  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
,
13.3  
13.6  
e
H
L
5.45 BSC  
18.70 19.10  
.215 BSC  
.736 .752  
.094 .106  
2.40  
2.70  
L1  
1.20  
1.40  
.047 .055  
L2  
L3  
L4  
1.00  
0.25 BSC  
3.80 4.10  
1.15  
.039 .045  
.010 BSC  
.150 .161  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGH 20N120BD1  
IXGT 20N120BD1  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
40  
35  
30  
25  
20  
15  
10  
5
16 0  
14 0  
12 0  
10 0  
80  
60  
40  
20  
0
VG E = 15V  
VGE = 15V  
13V  
11V  
13 V  
1 1V  
9V  
7V  
9V  
7V  
5V  
5V  
0
1
0.5  
3
1.5  
2
2.5  
3
3.5  
4
4.5  
5
0
2
4
6
8
VCE - Volts  
10 12 14 16 18  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Temperature Dependence of VCE(sat)  
40  
35  
30  
25  
20  
15  
10  
5
1. 4  
1. 3  
1. 2  
1. 1  
1
VG E = 15V  
13V  
11V  
VG E = 15V  
I C = 40A  
9V  
7V  
5V  
I C = 20A  
0.9  
0.8  
0.7  
I C= 10A  
0 25 50 75 100 125 150  
0
1
1.5  
2
2.5  
3
VCE - Volts  
3.5  
4
4.5  
5
-50 -25  
TJ - Degrees Centigrade  
Fig. 6. Transconductance  
Fig. 5. Input Admittance  
80  
70  
60  
50  
40  
30  
20  
10  
27  
24  
21  
18  
15  
12  
9
TJ = -40ºC  
25ºC  
125ºC  
TJ= -40ºC  
25ºC  
125ºC  
6
3
0
0
4
5
6
7
8
9
10  
0
10  
20 30 40 50 60 70 80  
VGE - Volts  
I C - Amperes  
© 2003 IXYS All rights reserved  
IXGH 20N120BD1  
IXGT 20N120BD1  
Fig. 8. Dependence of Eoff on IC  
Fig. 7. Dependence of Eoff on RG  
14  
12  
10  
8
14  
12  
10  
8
TJ = 125ºC  
VGE = 15V  
I C = 40A  
VCE = 960V  
TJ = 125ºC  
VG E = 15V  
VC E = 960V  
I C = 20A  
R G= 56 Ohms  
6
R G= 5 Ohms  
6
4
4
2
I C = 10A  
50  
0
2
0
10  
20  
30  
40  
60  
10  
15  
20  
25  
I C - Amperes  
30  
35  
40  
R G - Ohms  
Fig. 9. Dependence of Eoff on Temperature  
Fig. 10. Gate Charge  
16  
15  
12  
9
Solid lines - RG = 56 Ohms  
Dashed lines - RG = 5 Ohms  
VGE = 15V  
VCE = 600V  
I C= 20A  
I G= 10mA  
14  
12  
10  
8
VCE = 960V  
I C = 40A  
I C = 20A  
6
6
4
3
2
I C = 10A  
0
0
0
10  
20 30  
40 50 60 70 80  
0
25  
50  
75  
100  
125  
150  
Q G - nanoCoulombs  
TJ - Degrees Centigrade  
Fig. 12. Maximum Transient Thermal Resistance  
Fig. 11. Reverse-Bias Safe Operating Area  
1
90  
80  
70  
60  
50  
40  
30  
20  
10  
TJ = 125 C  
º
RG = 10 Ohms  
dV/dT < 10V/ns  
0
0.1  
100  
300  
500  
700  
900  
1100 1300  
1
10  
100  
1000  
VCE - Volts  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGH 20N120BD1  
IXGT 20N120BD1  
70  
A
5
60  
A
TVJ= 100°C  
VR = 600V  
TVJ= 100°C  
VR = 600V  
µC  
60  
IF 50  
40  
50  
4
3
2
1
0
Qr  
IRM  
40  
30  
20  
10  
0
TVJ=150°C  
TVJ=100°C  
TVJ= 25°C  
IF= 60A  
IF= 30A  
IF= 15A  
IF= 60A  
IF= 30A  
IF= 15A  
30  
20  
10  
0
A/µs  
-diF/dt  
0
1
2
3
VF  
V
4
100  
1000  
0
200 400 600 1000  
A/µs  
-diF/dt  
Fig. 13. Forward current IF versus VF  
2.0  
Fig. 14. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 15. Peak reverse current IRM  
versus -diF/dt  
220  
120  
1.2  
µs  
TVJ= 100°C  
TVJ= 100°C  
VR = 600V  
ns  
IF = 30A  
V
200  
VFR  
tfr  
1.5  
Kf  
tfr  
trr  
80  
40  
0
0.8  
VFR  
180  
160  
140  
120  
IF= 60A  
IF= 30A  
IF= 15A  
1.0  
IRM  
0.4  
0.5  
Qr  
0.0  
0.
A/µs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
°C  
A/µs  
diF/dt  
TVJ  
-diF/dt  
Fig. 16. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 17. Recovery time trr versus -diF/dt  
Fig. 18. Peak forward voltage VFR and  
tfr versus diF/dt  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
1
2
3
0.465  
0.179  
0.256  
0.0052  
0.0003  
0.0397  
0.1  
ZthJC  
0.01  
DSEP 30-12A/DSEC 60-12A  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 19. Transient thermal resistance junction to case  
© 2003 IXYS All rights reserved  
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