IXGA20N100A3 IXGP20N100A3
IXGH20N100A3
Symbol
Test Conditions
Characteristic Values
TO-247 Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = 20A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
9
16
S
Cies
Coes
Cres
1110
56
pF
pF
pF
15
Qg(on)
Qge
40.0
6.7
nC
nC
nC
IC = 20A, VGE = 15V, VCE = 0.5 • VCES
Qgc
15.5
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
34
ns
ns
Resistive Switching Times, TJ = 25°C
IC = 20A, VGE = 15V
110
75
ns
ns
VCE = 800V, RG = 10Ω
1090
1 = Gate
2 = Collector
3 = Emitter
37
ns
ns
Resistive Switching Times, TJ = 125°C
IC = 20A, VGE = 15V
125
80
ns
ns
VCE = 800V, RG = 10Ω
1550
RthJC
RthCK
0.83 °C/W
TO-220
TO-247
0.50
0.21
°C/W
°C/W
Note:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-220 Outline
TO-263 Outline
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
Pins: 1 - Gate
3 - Emitter
2 - Collector
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
