IXGC 16N60B2
IXGC 16N60B2D1
ISOPLUS220 Outline
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 12A; VCE = 10 V,
Note 2.
8
12
S
Cies
VCE = 25 V, VGE = 0 V, f = 1 MHz
780
pF
Coes
16N60B2
16N60B2D1
55
65
pF
pF
Cres
19
pF
Qg
IC = 20A, VGE = 15 V, VCE = 0.5 VCES
32
6
nC
nC
nC
Qge
Qgc
10
td(on)
tri
td(off)
tfi
25
15
ns
ns
Inductive load, TJ = 125°C
IC = 12A; VGE = 15 V
70
150 ns
150 ns
260 mJ
VCE = 400 V; RG = Roff = 22 Ω
80
Note 1
Eoff
150
td(on)
tri
25
18
ns
ns
Inductive load, TJ = 125°C
Eon
16N60B2
16N60B2D 1
0.38
0.8
mJ
mJ
IC = 12A; VGE = 15 V
V
CE = 400 V; RG = Roff = 22 Ω
td(off)
tfi
110
170
350
ns
ns
Note 1
Eoff
mJ
RthJC
RthCK
2.0 K/W
K/W
0.25
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol Test Conditions
VF
IF = 10 A, VGE = 0 V
2.66
1.66
V
V
TJ = 125°C
IRM
trr
IF = 12 A; -diF/dt = 100 A/μs, VR = 100 V
VGE = 0 V; TJ = 125°C
2.5
110
A
ns
trr
IF = 1 A; -diF/dt = 100 A/μs; VR = 30 V, VGE = 0 V
30
ns
RthJC
2.5 K/W
Notes:
1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ,
or increased RG.
2. Pulse test, t < 300 ms, duty cycle d < 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
6,534,343
6,583,505
6,710,405B2
6,710,463
