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IXGH4N250C

型号:

IXGH4N250C

品牌:

LITTELFUSE[ LITTELFUSE ]

页数:

4 页

PDF大小:

158 K

Advance Technical Information  
High Voltage  
IGBTs  
VCES = 2500V  
IC110 = 4A  
IXGT4N250C  
IXGH4N250C  
VCE(sat) 6.0V  
TO-268 (IXGT)  
G
Symbol  
Test Conditions  
Maximum Ratings  
E
C (Tab)  
VCES  
VCGR  
TC = 25°C to 150°C  
2500  
2500  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
TO-247 (IXGH)  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
13  
4
46  
A
A
A
G
C
C (Tab)  
E
SSOA  
(RBSOA)  
V
GE = 15V, TVJ = 125°C, RG = 20Ω  
ICM  
=
8
A
V
Clamped Inductive Load  
VCES 2000  
G = Gate  
E = Emitter  
C
= Collector  
Tab = Collector  
PC  
TC = 25°C  
150  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z Fast Turn off IGBTs  
z International Standard Packages  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-268  
TO-247  
4
6
g
g
Advantages  
z High Power Density  
z Low Gate Drive Requirement  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
2500  
3.0  
V
V
z Buck Converters  
5.0  
z Switch-Mode and Resonant-Mode  
Power Supplies  
z Uninterruptible Power Supplies  
ICES  
VCE = 0.8 • VCES, VGE = 0V  
25  
1
μA  
TJ = 125°C  
mA  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 4A, VGE = 15V, Note 1  
4.6  
4.5  
6.0  
V
V
TJ = 125°C  
© 2011 IXYS CORPORATION, All Rights Reserved  
DS100320(03/11)  
IXGT4N250C  
IXGH4N250C  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-268 Outline  
Min.  
Typ.  
Max.  
gfS  
IC = 4A, VCE = 10V, Note 1  
4.0  
6.0  
S
Cies  
Coes  
Cres  
1150  
52  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
19  
Qg(on)  
Qge  
57  
8
nC  
nC  
nC  
IC = 4A, VGE = 15V, VCE = 1000V  
Terminals: 1 - Gate  
3 - Emitter  
2,4 - Collector  
Qgc  
21  
Inductive Load, TJ = 25°C  
IC = 4A, VGE = 15V  
VCE = 0.5 VCES, RG = 20Ω  
Note 2  
td(off)  
tfi  
350  
29  
ns  
ns  
E(off)  
0.36  
mJ  
Inductive Load, TJ = 125°C  
IC = 4A, VGE = 15V  
VCE = 0.5 VCES, RG = 20Ω  
Note 2  
td(off)  
tfi  
385  
86  
ns  
ns  
E(off)  
0.80  
mJ  
RthJC  
RthCS  
0.82 °C/W  
°C/W  
TO-247  
0.21  
TO-247 Outline  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
1
2
3
P  
Additional provisions for lead to lead voltage isolation are required at VCE > 1200V.  
e
Terminals: 1 - Gate  
2 - Collector  
3 - Emitter  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGT4N250C  
IXGH4N250C  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
8
7
6
5
4
3
2
1
0
VGE = 25V  
10V  
VGE = 15V  
13V  
60  
50  
40  
30  
20  
10  
0
8V  
11V  
7V  
6V  
10V  
9V  
8V  
7V  
6V  
5V  
0
1
2
3
4
5
6
7
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
8
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGE = 15V  
VGE = 15V  
10V  
8V  
7V  
7
6
5
4
3
2
1
0
I C = 8A  
6V  
I C = 4A  
I C = 2A  
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
16  
14  
12  
10  
8
10  
9
VGE = 15V  
8
I C = 8A  
7
TJ = 125ºC  
6
25ºC  
- 40ºC  
6
4A  
5
4
4
2
2A  
3
0
5
6
7
8
9
10  
VGE - Volts  
11  
12  
13  
14  
15  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
VGE - Volts  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXGT4N250C  
IXGH4N250C  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
14  
12  
10  
8
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 1000V  
I C = 4A  
I G = 10mA  
25ºC  
125ºC  
6
6
4
4
2
2
0
0
0
2
4
6
8
10  
12  
14  
16  
18  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Reverse-Bias Safe Operating Area  
Fig. 10. Capacitance  
10,000  
1,000  
100  
10  
28  
24  
20  
16  
12  
8
C
ies  
C
oes  
C
res  
TJ = 125ºC  
4
RG = 20  
= 1 MHz  
5
f
dv / dt < 10V / ns  
0
1
250  
500  
750  
1000  
1250  
1500  
1750  
2000  
2250  
2500  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS REF: G_4N250C(4P) 5-13-11  
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