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5LP01SS-TL-H

型号：

5LP01SS-TL-H

品牌：

ONSEMI[ ONSEMI ]

页数：

6 页

PDF大小：

283 K

下载PDF手册
Ordering number : EN6622C  
5LP01SS  
P-Channel Small Signal MOSFET  
http://onsemi.com  
–
–
Ω
50V, 0.07A, 23 , Single SSFP  
Features  
•
Low ON-resistance  
•
•
•
Ultrahigh-speed switching  
1.5V drive  
Halogen free compliance  
Specifications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
--50  
Unit  
V
V
DSS  
V
±10  
V
GSS  
I
--0.07  
--0.28  
0.15  
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW 10 s, duty cycle 1%  
A
≤
μ
≤
DP  
P
W
°C  
°C  
D
Tch  
150  
Tstg  
--55 to +150  
This product is designed to “ESD immunity < 200V ”, so please take care when handling.  
*
Machine Model  
*
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Ordering & Package Information  
Package Dimensions  
unit : mm (typ)  
Device  
Package  
Shipping  
memo  
7029A-003  
SSFP  
SC-81  
8,000  
pcs./reel  
5LP01SS-TL-E  
Pb-Free  
Pb-Free  
and  
Halogen Free  
1.4  
5LP01SS-TL-E  
5LP01SS-TL-H  
SSFP  
SC-81  
8,000  
pcs./reel  
5LP01SS-TL-H  
0.1  
0.25  
3
0 to 0.02  
Packing Type: TL  
Marking  
1
2
2
0.2  
0.45  
XB  
TL  
1
1 : Gate  
2 : Source  
3 : Drain  
Electrical Connection  
3
3
SSFP  
1
2
Semiconductor Components Industries, LLC, 2013  
July, 2013  
72413 TKIM TC-00002971/O0312 TKIM/71206/42006PE MSIM TB-00002118/91400 TSIM TA-2042 No.6622-1/6  
5LP01SS  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
V
min  
--50  
max  
Drain to Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate to Source Leakage Current  
Cutoff Voltage  
V
I
= --1mA, V =0V  
(BR)DSS  
D GS  
I
V
V
= --50V, V =0V  
--1  
A
A
μ
DSS  
DS  
GS  
I
=±8V, V =0V  
DS  
±10  
μ
GSS  
GS  
V
(off)  
|
V
= --10V, I = --100  
A
μ
--0.4  
70  
--1.4  
V
GS  
yfs  
DS D  
Forward Transfer Admittance  
V
= --10V, I = --40mA  
D
100  
18  
mS  
Ω
|
DS  
R
R
R
(on)1  
(on)2  
(on)3  
I
= --40mA, V = --4V  
D GS  
23  
28  
60  
DS  
DS  
DS  
Static Drain to Source On-State Resistance  
I
D
= --20mA, V = --2.5V  
GS  
20  
Ω
I
D
= --5mA, V = --1.5V  
GS  
30  
Ω
Input Capacitance  
Ciss  
7.4  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Coss  
Crss  
V
= --10V, f=1MHz  
4.2  
DS  
1.3  
t
t
t
t
(on)  
20  
d
r
35  
See specified Test Circuit.  
Turn-OFF Delay Time  
Fall Time  
(off)  
160  
150  
1.40  
0.16  
0.23  
--0.85  
d
f
Total Gate Charge  
Qg  
Gate to Source Charge  
Gate to Drain “Miller” Charge  
Diode Forward Voltage  
Qgs  
Qgd  
V
DS  
= --10V, V = --10V, I = --70mA  
GS  
D
V
SD  
I = --70mA, V =0V  
S
--1.2  
GS  
Switching Time Test Circuit  
V
= --25V  
DD  
V
IN  
0V  
--4V  
I
= --40mA  
L
D
R =625Ω  
V
D
V
IN  
OUT  
PW=10μs  
D.C.≤1%  
G
5LP01SS  
P.G  
50Ω  
S
I
D
-- V  
GS  
I
D
-- V  
DS  
--0.14  
--0.07  
V
= --10V  
DS  
--0.06  
--0.05  
--0.12  
--0.10  
--0.04  
--0.08  
--0.06  
--0.04  
--0.03  
--0.02  
V
= --1.5V  
GS  
--0.01  
0
--0.02  
0
0
--0.5  
--1.0  
--1.5  
--2.0  
--2.5  
--3.0  
--3.5  
--4.0  
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0  
IT00090  
Gate to Source Voltage, V  
GS  
-- V  
IT00091  
Drain to Source Voltage, V  
DS  
-- V  
No.6622-2/6  
5LP01SS  
R
(on) -- V  
GS  
R
(on) -- I  
DS  
DS  
D
40  
35  
100  
V
= --4V  
Ta=25°C  
GS  
7
5
30  
25  
3
2
I = --40mA  
--20mA  
D
Ta=75°C  
25°C  
20  
15  
10  
--25°C  
10  
--0.01  
0
--1  
--2  
--3  
--4  
--5  
--6  
--7  
--8  
--9  
--10  
2
3
5
7
2
3
--0.1  
Gate to Source Voltage, V  
GS  
-- V  
IT00092  
Drain Current, I -- A  
IT00093  
D
R
(on) -- I  
R
(on) -- I  
DS  
D
DS  
D
100  
1000  
V
= --2.5V  
V
= --1.5V  
GS  
GS  
7
5
7
5
3
2
Ta=75°C  
25°C  
100  
3
2
7
5
--25°C  
25°C  
3
2
Ta=75°C  
--25°C  
10  
--0.001  
10  
--0.01  
2
3
5
7
2
3
2
3
5
7
2
3
--0.1  
--0.01  
IT00095  
Drain Current, I -- A  
IT00094  
Drain Current, I -- A  
D
D
R
DS  
(on) -- Ta  
⎪yfs⎪ -- I  
D
40  
1.0  
V
= --10V  
DS  
7
5
35  
3
2
30  
0.1  
25  
20  
7
5
3
2
15  
10  
0.01  
--0.01  
2
3
5
7
2
3
--60 --40 --20  
0
20  
40  
60  
80 100 120 140 160  
--0.1  
Ambient Temperature, Ta -- °C  
Drain Current, I -- A  
D
IT00096  
IT00097  
I
S
-- V  
SD  
SW Time -- I  
D
1000  
3
2
V
V
= --25V  
= --4V  
V
=0V  
DD  
GS  
GS  
7
5
3
2
t
f
--0.1  
t (off)  
d
7
5
100  
7
5
3
2
t
r
3
2
t (on)  
d
--0.01  
--0.5  
10  
--0.01  
--0.6  
--0.7  
--0.8  
--0.9  
--1.0  
--1.1  
--1.2  
IT00098  
2
3
5
7
--0.1  
IT00099  
Diode Forward Voltage, V  
SD  
-- V  
Drain Current, I -- A  
D
No.6622-3/6  
5LP01SS  
V
-- Qg  
Ciss, Coss, Crss -- V  
DS  
GS  
--10  
--9  
100  
V
= --10V  
f=1MHz  
7
5
DS  
I = --70mA  
D
3
2
--8  
--7  
10  
7
5
Ciss  
--6  
--5  
--4  
--3  
--2  
Coss  
3
2
1.0  
7
5
Crss  
3
2
--1  
0
0.1  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
--5  
--10 --15 --20 --25 --30 --35  
--40 --45  
--50  
Drain-to-Source Voltage, V  
DS  
-- V  
Total Gate Charge, Qg -- nC  
IT00100  
IT00101  
P
-- Ta  
D
0.20  
0.15  
0.10  
0.05  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
IT02381  
Ambient Temperature, Ta -- °C  
No.6622-4/6  
5LP01SS  
Outline Drawing  
Land Pattern Example  
5LP01SS-TL-E, 5LP01SS-TL-H  
Mass (g) Unit  
Unit: mm  
0.0018  
mm  
* For reference  
0.5  
0.45  
0.45  
0.45 0.45  
No.6622-5/6  
5LP01SS  
Note on usage : Since the 5LP01SS is a MOSFET product, please avoid using this device in the vicinity of  
highly charged objects.  
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at  
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no  
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the  
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical  
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use  
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in  
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for  
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors  
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or  
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the  
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PS No.6622-6/6  
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