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PXAD184218FVV1R0XTMA1

型号：

PXAD184218FVV1R0XTMA1

品牌：

INFINEON[ Infineon ]

页数：

9 页

PDF大小：

312 K

下载PDF手册
PXAD184218FV  
Thermally-Enhanced High Power RF LDMOS FET  
420 W, 28 V, 1805 – 1880 MHz  
Description  
The PXAD184218FV is a 420-watt (P  
) LDMOS FET with an  
3dB  
asymmetrical design intended for use in multi-standard cellular  
power amplifier applications in the 1805 to 1880 MHz frequency  
band. Features include dual-path design, input and output matching,  
high gain and thermally-enhanced package with earless flanges.  
Manufactured with Infineon's advanded LDMOS process, this device  
provides excellent thermal performance and superior reliability.  
PXAD184218FV  
Package H-37275G-6/2  
Features  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ(MAIN) = 720 mA,  
VGS(PEAK) = 1.4 V, ƒ = 1880 MHz,  
3GPP WCDMA signal, PAR = 10 dB,  
3.84 MHz BW  
•
•
Broadband internal input and output matching  
Asymmetrical Doherty design  
- Main : P  
- Peak : P  
= 130 W Typ  
= 290 W Typ  
1dB  
1dB  
24  
20  
16  
12  
8
60  
40  
20  
0
Efficiency  
•
Typical Pulsed CW performance, 1842.5 MHz, 28 V,  
Doherty configuration  
- Output power at P  
- Efficiency = 62%  
- Gain = 14 dB  
= 420 W  
3dB  
•
Capable of handling 10:1 VSWR @ 28 V, 110 W  
(WCDMA) output power  
Gain  
-20  
-40  
-60  
•
•
Integrated ESD protection  
Human Body Model class 2 (per ANSI/ESDA/  
JEDEC JS-001)  
4
PAR @ 0.01% CCDF  
•
•
Low thermal resistance  
0
pxad184218fv_g1  
25  
30  
35  
40  
45  
50  
55  
Pb-free and RoHS compliant  
Average Output Power (dBm)  
RF Characteristics  
Two-carrier WCDMA Specifications (tested in Infineon Doherty production test fixture)  
= 28 V, I = 720 mA, V = 1.4 V, P = 60 W avg, ƒ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,  
V
DD  
DQ  
GS(PEAK)  
OUT  
peak/average = 10 dB @ 0.01% CCDF  
Characteristic  
Symbol  
Min  
15  
Typ  
16  
Max  
—
Unit  
dB  
Linear Gain  
G
ps  
Drain Efficiency  
hD  
49  
51.5  
–28  
7.7  
—
%
Adjacent Channel Power Ratio  
Output PAR@0.01% CCDF  
ACPR  
OPAR  
—
–25.0  
—
dBc  
dBc  
6.8  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 9  
Rev. 02.1, 2016-12-07  
PXAD184218FV  
DC Characteristics (each side)  
Characteristic  
Conditions  
Symbol  
Min  
65  
—
Typ  
—
Max  
—
1
Unit  
V
Drain-Source Breakdown Voltage  
Drain Leakage Current  
V
GS  
= 0 V, I = 10 mA  
V(  
BR)DSS  
DS  
V
= 28 V, V = 0 V  
I
I
—
µA  
µA  
µA  
W
DS  
DS  
GS  
DSS  
DSS  
V
= 63 V, V = 0 V  
—
—
10  
1
GS  
Gate Leakage Current  
On-State Resistance (Main)  
(Peak)  
V
GS  
= 10 V, V = 0 V  
I
—
—
DS  
GSS  
V
GS  
= 10 V, V = 0.1 V  
R
R
—
0.03  
0.02  
2.6  
1.5  
—
—
2.9  
—
DS  
DS(on)  
DS(on)  
V
GS  
= 10 V, V = 0.1 V  
—
W
DS  
Operating Gate Voltage (Main)  
(Peak)  
V
= 28 V, I  
= 28 V, I  
= 720 mA  
= 0 mA  
V
GS  
2.3  
—
V
DS  
DS  
DQ  
DQ  
V
V
GS  
V
Maximum Ratings  
Parameter  
Symbol  
Value  
65  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Junction Temperature  
Storage Temperature Range  
V
DSS  
V
GS  
–6 to +10  
225  
V
T
°C  
°C  
J
T
STG  
–65 to +150  
Thermal Characteristics  
Parameter  
Symbol  
Value  
0.514  
0.297  
Unit  
°C/W  
°C/W  
Thermal Resistance (Main, T  
= 70°C, 60 W CW)  
= 70°C, 280 W CW)  
R
CASE  
CASE  
qJC  
qJC  
(Peak, T  
R
Ordering Information  
Type and Version  
PXAD184218FV V1 R0  
PXAD184218FV V1 R2  
Order Code  
Package Description  
Shipping  
PXAD184218FVV1R0XTMA1  
PXAD184218FVV1R2XTMA1  
H-37275G-6/2, earless flange  
H-37275G-6/2, earless flange  
Tape & Reel, 50 pcs  
Tape & Reel, 250 pcs  
Data Sheet  
2 of 9  
Rev. 02.1, 2016-12-07  
PXAD184218FV  
Typical RF Performance (data taken in production test fixture)  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ(MAIN) = 720 mA,  
VGS(PEAK) = 1.4 V, ƒ = 1880 MHz,  
3GPP WCDMA signal, PAR = 10 dB,  
BW = 3.84 MHz  
Single-carrier WCDMA Broadband  
Performance  
VDD = 28 V, IDQ(MAIN) = 720 mA,  
VGS(PEAK) = 1.4 V, POUT = 47.8 dBm,  
3GPP WCDMA signal, PAR = 10 dB  
-10  
-20  
-30  
-40  
-50  
-60  
-70  
60  
50  
40  
30  
20  
10  
0
20  
18  
16  
14  
60  
55  
50  
45  
40  
35  
30  
Efficiency  
ACPU  
ACPL  
Efficiency  
Gain  
pxad184218fv_g3  
pxad184218fv_g2  
1725  
1775  
1825  
1875  
1925  
1975  
25  
30  
35  
40  
45  
50  
55  
Frequency (MHz)  
Average Output Power (dBm)  
Single-carrier WCDMA Broadband  
Performance  
VDD = 28 V, IDQ(MAIN) = 720 mA,  
VGS(PEAK) = 1.4 V, POUT = 47.8 dBm,  
3GPP WCDMA signal, PAR = 10 dB  
-10  
-15  
-20  
-25  
-30  
-35  
-5  
-10  
-15  
-20  
-25  
-30  
ACPU  
ACPL  
IRL  
pxad184218fv_g4  
1725  
1775  
1825  
1875  
1925  
1975  
Frequency (MHz)  
Data Sheet  
3 of 9  
Rev. 02.1, 2016-12-07  
PXAD184218FV  
Load Pull Performance  
Main Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, V = 28 V, I = 960 mA, class AB  
DD  
DQ  
P
1dB  
Max Drain Efficiency  
Max Output Power  
Zs  
[W]  
Zl  
[W]  
Zl  
[W]  
Freq  
[MHz]  
Gain  
P
P
P
P
1dB  
Gain  
[dB]  
D
D
1dB  
1dB  
[W]  
1dB  
h
h
[dB]  
20.9  
20.2  
20.7  
[dBm]  
52.40  
52.45  
52.50  
[dBm]  
50.60  
51.30  
51.40  
[W]  
116  
134  
138  
[%]  
58.7  
56.2  
57.4  
[%]  
66.6  
67.7  
67.5  
1805  
1842.5  
1880  
2.3 - j6.3  
3.2 - j7.4  
5.1 - j8.9  
1.6 - j3.3  
1.4 - j3.5  
1.4 - j3.5  
173  
176  
180  
3.5 - j3.1  
2.7 - j2.7  
2.7 -j 3.1  
23.1  
22.4  
22.8  
P
3dB  
Max Drain Efficiency  
Max Output Power  
Zs  
[W]  
Zl  
[W]  
Zl  
[W]  
Freq  
[MHz]  
Gain  
P
P
Gain  
[dB]  
P
P
3dB  
D
[%]  
D
3dB  
3dB  
[W]  
3dB  
h
h
[dB]  
18.4  
18.1  
18.6  
[dBm]  
53.20  
53.29  
53.27  
[dBm]  
52.00  
52.20  
52.10  
[W]  
157  
167  
162  
[%]  
67.4  
68.4  
68.6  
1805  
1842.5  
1880  
2.3 - j6.3  
3.2 - j7.4  
5.1 - j8.9  
1.4 - j3.5  
1.3 - j3.6  
1.4 - j3.7  
210  
213  
212  
58.5  
58.6  
58.8  
2.9 - j3.7  
2.6 - j3.3  
2.7 - j3.2  
20.6  
20.2  
20.7  
Peak Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, V = 28 V, I  
= 10 mA, class B  
DD  
DQ  
P
1dB  
Max Output Power  
Max Drain Efficiency  
Zs  
[W]  
Zl  
[W]  
Zl  
[W]  
Freq  
[MHz]  
Gain  
P
P
Gain  
[dB]  
P
P
D
D
1dB  
1dB  
[W]  
1dB  
1dB  
[W]  
h
h
[dB]  
17.1  
17.4  
17.7  
[dBm]  
55.38  
55.43  
55.42  
[dBm]  
53.27  
53.30  
53.33  
[%]  
54.7  
54.9  
54.6  
[%]  
66.7  
66.7  
66.3  
1805  
1842.5  
1880  
2.1 - j4.6  
2.8 - j5.4  
4.4 - j5.6  
1.1 - j3.3  
1.2 - j3.4  
1.3 - j3.7  
345  
349  
348  
2.8 - j2.2  
2.7 -j 2.2  
2.5 - j2.2  
18.7  
18.8  
19.2  
212  
214  
215  
P
3dB  
Max Output Power  
Max Drain Efficiency  
Zs  
[W]  
Zl  
[W]  
Zl  
[W]  
Freq  
[MHz]  
Gain  
P
P
Gain  
[dB]  
P
P
3dB  
D
[%]  
D
3dB  
3dB  
[W]  
3dB  
h
h
[dB]  
14.9  
15  
[dBm]  
56.17  
56.20  
56.14  
[dBm]  
54.20  
54.40  
54.80  
[W]  
265  
277  
301  
[%]  
66.8  
67.1  
66.9  
1805  
1842.5  
1880  
2.1 - j4.6  
2.8 - j5.4  
4.4 - j5.6  
1.2 - j3.6  
1.2 - j3.7  
1.3 - j3.8  
414  
417  
411  
56.9  
56.2  
56.2  
2.8 - j2.6  
2.6 - j2.7  
2.4 - j2.9  
16.5  
16.6  
17  
15.6  
Data Sheet  
4 of 9  
Rev. 02.1, 2016-12-07  
PXAD184218FV  
Reference Circuit, 1805 – 1880 MHz  
VGS(MAIN)  
RO4350, 20 MIL  
RO4350, 20 MIL  
C206  
C205  
C204  
R103  
C105  
C104  
R101  
VDD  
C210  
C211  
C207  
C209  
C208  
C201  
C101  
C202  
C103  
C102  
RF_IN  
RF_OUT  
C203  
U1  
C106  
(276)  
R105  
C107  
R102  
C108  
R104  
C217  
C216  
VDD  
C215  
R803  
C804 C802  
C801  
C212  
C213  
C214  
C218  
C219  
R802  
R804  
S1  
R801  
S2  
S3  
(276)  
C803  
PXAD184218FV_IN_02  
PXAD184218FV_OUT_02  
VGS(PEAK)  
Reference circuit assembly diagram (not to scale)  
Data Sheet  
5 of 9  
Rev. 02.1, 2016-12-07  
PXAD184218FV  
Reference Circuit (cont.)  
Reference Circuit Assembly  
DUT  
PXAD184218FV V1  
Test Fixture Part No.  
PCB  
LTA/PXAD184218FV V1  
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 1805 – 1880 MHz  
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower  
Components Information  
Component  
Description  
Manufacturer  
P/N  
Input  
C101, C106  
Capacitor, 22 pF  
ATC  
ATC800A220JT250T  
ATC800A1R8CT250T  
ATC800A0R6CT250T  
ATC800A330JT250T  
LLL31MR60J106ME01L  
ERJ-8GEYJ100V  
C16A50Z4  
C102  
Capacitor, 1.8 pF  
Capacitor, 0.6 pF  
Capacitor, 33 pF  
ATC  
C103  
ATC  
C104, C107  
ATC  
C105, C108  
Capacitor, 10 µF  
Murata Electronics North America  
Panasonic Electronic Components  
Richardson  
R101, R102, R103, R104  
Resistor, 10 ohms  
Resistor, 50 ohms  
Capacitor, 1000 pF  
Resistor, 100 ohms  
Resistor, Chip 1.3K ohms  
Resistor, 10 ohms  
Resistor, CHIP 1.2K ohms  
Resistor, Variable 2K ohms  
Transistor  
R105  
C801, C802, C803, C804  
AVX Corporation  
06031C102KAT2A  
ERJ-8GEYJ101V  
ERJ-3GEYJ132V  
ERJ-8GEYJ100V  
ERJ-3GEYJ122V  
3224W-1-202E  
R801  
R802  
R803  
R804  
S1  
Panasonic Electronic Components  
Panasonic Electronic Components  
Panasonic Electronic Components  
Panasonic Electronic Components  
Bourns Inc.  
S2  
Diodes Incorporated  
Texas Instruments  
BCP5616TA  
S3  
Voltage Regulator  
Hybrid Coupler  
LM78L05ACM  
U1  
Anaren  
05X3C19P1-05S  
Output  
C201  
C202  
C203  
Capacitor, 7.5 pF  
Capacitor, 33 pF  
Capacitor, 0.3 pF  
Capacitor,10 µF  
ATC  
ATC800A7R5JT250T  
ATC800A330JT250T  
ATC800A0R3CT250T  
UMK325C7106MM-T  
ATC  
ATC  
C204, C205, C206, C208,  
C209, C212, C213  
Taiyo Yuden  
C214, C216, C217  
C207, C215  
Capacitor, 22 pF  
Capacitor, 220 µF  
ATC  
ATC800A220JT250T  
PCE4444TR-ND  
C210, C211, C218, C219  
Panasonic Electronic Components  
Data Sheet  
6 of 9  
Rev. 02.1, 2016-12-07  
PXAD184218FV  
Pinout Diagram (top view)  
Main  
Peak  
V1  
V2  
Pin  
D1  
D2  
G1  
G2  
Description  
D1  
D2  
Drain Device 1 (Main)  
Drain Device 2 (Peak)  
Gate Device 1 (Main)  
Gate Device 2 (Peak)  
Source (flange)  
S
S
V1, V2  
V
DD  
G1  
G2  
H-34275G-6-2_pd_10-10-2012  
Data Sheet  
7 of 9  
Rev. 02.1, 2016-12-07  
PXAD184218FV  
Package Outline Specifications  
Package H-37275G-6/2  
30.61  
[1.205]  
(13.72  
[.540])  
2X 2.22  
[.087]  
D
2X 45° x .64  
[.025]  
2X (1.27  
[.050])  
2X 2.29  
[.090]  
2X 30°  
C
L
6X 4.04±0.51  
[.159±.020]  
D1  
G1  
D2  
G2  
V1  
V2  
10.16  
[.400]  
9.14  
[.360]  
(18.24  
[.718])  
C
L
+.38  
4X R0.51  
-.13  
C
C
L
L
+.015  
R.020  
[
]
-.005  
4X 12.45  
[.490]  
2X 26.16  
[1.030]  
+0.25  
-0.13  
4.58  
+.010  
.180  
[
]
-.005  
31.24±0.28  
[1.230±.011]  
SPH 2.134  
[.084]  
C
L
(1.63  
[0.064])  
H-37275G-6/2_sl_po_03_07-25-2013  
32.26  
[1.270]  
S
Diagram Notes—unless otherwise specified:  
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.  
2. Primary dimensions are mm. Alternate dimensions are inches.  
3. All tolerances 0.127 [.005] unless specified otherwise.  
4. Pins: D1, D2 – drains; G1, G2 – gates; S – source; V1, V2 – VDD.  
5. Lead thickness: 0.13 + 0.051/–0.025 mm [0.005+0.002/–0.001 inch].  
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].  
Find the latest and most complete information about products and packaging at the Infineon Internet page  
http://www.infineon.com/rfpower  
Data Sheet  
8 of 9  
Rev. 02.1, 2016-12-07  
PXAD184218FV V1  
Revision History  
Revision  
Date  
Data Sheet Type  
Advance  
Page  
All  
Subjects (major changes since last revision)  
01  
2016-04-20  
2016-11-07  
2016-12-07  
Data Sheet reflects advance specification for product development  
Data Sheet reflects released product specification  
02  
Production  
All  
02.1  
Production  
1, 4  
Revised typo in Features, revised PAE to Drain Eff inLoad Pull performance  
We Listen toYour Comments  
Any information within this document that you feel is wrong, unclear or missing at all?  
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to:  
highpowerRF@infineon.com  
To request other information, contact us at:  
+1 877 465 3667 (1-877-GO-LDMOS) USA  
or +1 408 776 0600 International  
Edition 2016-12-07  
Published by  
Infineon Technologies AG  
85579 Neubiberg, Germany  
© 2016 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.  
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the  
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,  
including without limitation, warranties of non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact the nearest  
Infineon Technologies Office (www.infineon.com/rfpower).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in question,  
please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-  
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device  
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be  
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be endangered.  
Data Sheet  
9 of 9  
Rev. 02.1, 2016-12-07  
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 		PXA300 为Marvell公司的PXA300 / 310平台存储解决方案[ Storage Solution for Marvell’s PXA300/310 Platform ] 2 页

MARVELL

 		PXA300 可扩展性能高达624兆赫的高性价比和高能效的智能手机，嵌入式解决方案，以及手持设备[ Scalable Performance up to 624 MHz for Cost-Effective and Power-Efficient Smartphones, Embedded Solutions, and Handheld Devices ] 4 页

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