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IXGR50N60A2U1

型号：

IXGR50N60A2U1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

143 K

下载PDF手册
Advance Technical Information  
VCES  
IC25  
VCE(sat)  
= 600 V  
= 75 A  
= 1.7 V  
IXGR 50N60A2U1  
IGBT with Diode  
Low Saturation Voltage IGBT with  
Low Forward Drop Diode  
Electrically Isolated Mounting Tab  
PreliminaryDataSheet  
Symbol  
TestConditions  
Maximum Ratings  
ISOPLUS247(IXGR)  
E153432  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
C
E
ISOLATEDTAB  
IC25  
IC110  
IF110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
75  
50  
A
A
A
A
G = Gate  
E = Emitter  
C = Collector  
TC = 110°C (50N60A2U1 Diode)  
TC = 25°C, 1 ms  
25  
200  
Features  
• Low on-state voltage IGBT and  
anti-parallel diode in one package  
• High current handling capability  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ VCE ≤ 600 V  
ICM = 80  
A
(RBSOA)  
• MOS Gate turn-on for drive simplicity  
PC  
TC = 25°C  
200  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Applications  
TJM  
Tstg  
• Lighting controls  
• Heating controls  
• AC/DC relays  
-55 ... +150  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
FC  
Mounting Force  
22..130/5..29  
N/lb  
Advantages  
VISOL  
50/60 Hz, RMS, t = 1 minute  
ISOL = 1mA, t = 1 s  
2500  
3000  
V~  
V~  
• Space savings (two devices in one  
package)  
• Easy to mount with 1 screw or spring  
Weight  
4
g
clip  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
3.0  
5.0  
V
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
650  
5
µA  
mA  
IGES  
VCE = 0 V, VGE = 20 V  
100  
1.7  
nA  
VCE(sat)  
IC = 50 A, VGE = 15 V  
Note 1  
V
V
TJ = 125°C  
1.3  
© 2005 IXYS All rights reserved  
DS99343(03/05)  
IXGR 50N60A2U1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
ISOPLUS247 Outline  
IC = 50 A; VCE = 10 V,  
Note 1  
40  
55  
S
Cies  
Coes  
Cres  
3500  
400  
50  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
140  
23  
nC  
nC  
nC  
Qge  
Qgc  
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES  
44  
td(on)  
tri  
td(off)  
tfi  
20  
25  
ns  
ns  
ns  
ns  
mJ  
Inductive load, TJ = 25°C  
IC = 50 A, VGE = 15 V  
410  
260  
3.5  
VCE = 480 V, RG = Roff = 5.0 Ω  
Eoff  
td(on)  
tri  
20  
25  
ns  
ns  
Eon  
td(off)  
tfi  
1.0  
720  
510  
7.7  
mJ  
ns  
Inductive load, TJ = 125°C  
IC = 50 A, VGE = 15 V  
ns  
VCE = 480 V, RG = Roff = 5.0 Ω  
Eoff  
mJ  
RthJC  
RthCK  
0.62 K/W  
K/W  
0.15  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = 50 A, VGE = 0 V,  
Note 1  
1.6  
V
RthJC  
0.95 K/W  
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
IXGR 50N60A2U1  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
@ 25 ºC  
ºC  
300  
250  
200  
150  
100  
50  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 15V  
13V  
V
=15V  
13V  
11V  
GE  
GE  
11V  
9V  
9V  
7V  
7V  
5V  
5V  
4
0
0
0
5
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
0
-50  
4
0.5  
1
1.5  
2
2.5  
3
VC E - Volts  
3.5  
4.5  
5
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 ºC  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
V
= 15V  
13V  
11V  
V
= 15V  
GE  
GE  
I
= 100A  
C
9V  
7V  
I
= 50A  
C
I
= 25A  
C
5V  
0.2 0.4 0.6 0.8  
1
VCE - Volts  
1.2 1.4 1.6 1.8  
2
-25  
0
25  
50  
TJ - Degrees Centigrade  
75  
100 125 150  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
250  
225  
200  
175  
150  
125  
100  
75  
3.5  
3
T
J
= 25 C  
º
I
= 100A  
50A  
25A  
C
2.5  
2
T = 125 C  
º
J
25ºC  
-40ºC  
1.5  
1
50  
25  
0
6
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
4.5  
5
5.5  
6
6.5  
7
VG E - Volts  
7.5  
8
8.5  
9
9.5  
© 2005 IXYS All rights reserved  
IXGR 50N60A2U1  
Fig. 8. Dependence of Turn-off  
Fig. 7. Transconductance  
Energy Loss on RG  
80  
70  
60  
50  
40  
30  
20  
10  
0
20  
18  
16  
14  
12  
10  
8
I
= 100A  
C
T = 125 C  
º
J
V
= 15V  
GE  
CE  
V
= 400V  
T = -40 C  
º
J
25ºC  
125 C  
º
I
I
= 50A  
C
C
6
4
= 25A  
60  
2
0
0
25  
50  
75 100 125 150 175 200 225  
I C - Amperes  
0
10  
20  
30 40  
- Ohms  
G
50  
70  
R
Fig. 9. Dependence of Turn-Off  
Energy Loss on IC  
Fig. 10. Dependence of Turn-off  
Energy Loss on Temperature  
18  
16  
14  
12  
10  
8
20  
18  
16  
14  
12  
10  
8
= 5Ω  
= 5Ω  
R
R
G
G
I
= 100A  
C
V
V
= 15V  
V
V
= 15V  
GE  
CE  
GE  
T = 125ºC  
J
= 400V  
= 400V  
CE  
I
= 50A  
C
6
6
T = 25 C  
º
J
4
4
2
2
I
= 25A  
C
0
0
25 35 45 55 65 75 85 95 105 115 125  
T - Degrees Centigrade  
20  
30  
40  
50  
60  
I C - Amperes  
70  
80  
90  
100  
J
Fig. 11. Dependence of Turn-off  
Switching Time on RG  
Fig. 12. Dependence of Turn-off  
Switching Time on IC  
1800  
1600  
1400  
1200  
1000  
800  
900  
800  
700  
600  
500  
400  
300  
200  
td(off)  
td(off)  
tfi  
- - - - -  
I
= 25A  
50A  
100A  
C
tfi  
- - - - - -  
= 5Ω, V  
R
= 15V  
G
GE  
T = 125ºC  
J
V
CE  
= 400V  
V
= 15V  
GE  
CE  
T = 125ºC  
J
V
= 400V  
25A < I < 100A  
C
T = 25ºC  
J
600  
400  
20  
30  
40  
50  
60  
I C - Amperes  
70  
80  
90  
100  
10  
20  
30  
40  
R G - Ohms  
50  
60  
70  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGR 50N60A2U1  
Fig. 13. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
15  
13.5  
12  
td(off)  
V
= 300V  
CE  
tfi  
- - - - - -  
I
I
= 50A  
C
G
I
= 25A  
50A  
R
= 5Ω  
C
G
= 10mA  
10.5  
9
V
V
= 15V  
GE  
CE  
100A  
= 400V  
7.5  
6
4.5  
3
I
= 50A  
25A  
C
1.5  
0
I
= 10 0A  
C
25 35 45 55 65 75 85 95 105 115 125  
0
20  
40  
60  
80  
100  
120  
140  
TJ - Degrees Centigrade  
Q G - nanoCoulombs  
Fig. 16. Reverse-Bias Safe  
Operating Area  
Fig. 15. Capacitance  
10000  
1000  
100  
160  
f = 1 MHz  
140  
120  
100  
80  
C
ies  
C
oes  
60  
T = 125ºC  
J
40  
R
= 10Ω  
G
C
dV/dT < 10V/ns  
20  
res  
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
100 150 200 250 300 350 400 450 500 550 600  
VC E - Volts  
VC E - Volts  
© 2005 IXYS All rights reserved  
IXGR 50N60A2U1  
Fig. 17. Maximum Transient Thermal Resistance  
1
0.1  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
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