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IXGR50N90B2D1

型号：

IXGR50N90B2D1

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

256 K

下载PDF手册
IXGR 50N90B2D1  
HiPerFASTTM  
IGBT with Fast  
Diode  
VCES  
IC25  
= 900 V  
= 40 A  
IXGR 50N90B2D1  
VCE(sat) = 2.9 V  
tfityp = 200 ns  
B2-Class High Speed IGBT  
with Fast Diode  
(Electrically Isolated Back Surface)  
Symbol  
Test Conditions  
Maximum Ratings  
ISOPLUS247 (IXGR)  
E153432  
VCES  
VCGR  
TJ = 25°C to 150°C  
900  
900  
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
V
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
C
E
TAB  
IC25  
IC110  
IF110  
ICM  
TC = 25°C  
40  
19  
A
A
A
A
TC = 110°C (IGBT)  
TC = 110°C (diode)  
TC = 25°C, 1 ms  
G = Gate  
C = Collector  
TAB = Collector  
22  
E = Emitter  
200  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ ≤ 720V  
ICM = 100  
A
(RBSOA)  
Features  
PC  
TC = 25°C  
100  
W
ꢀElectrically isolated tab  
ꢀInternationalstandardpackageoutline  
ꢀHigh current handling capability  
ꢀMOS Gate turn-on  
ꢀDrive simplicity  
ꢀRugged NPT structure  
ꢀUL recognized  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
VISOL  
FC  
50/60 Hz, RMS, t = 1ms  
2500  
V
N/lb  
g
Mounting force (PLUS247)  
20..120 / 4.5..25  
ꢀMolding epoxies meet UL94V-0  
flammabilityclassification  
Weight  
ISOPLUS247  
5
Applications  
ꢀCapacitor discharge & pulser circuits  
Symbol  
TestConditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25°C unless otherwise specified)  
ꢀAC motor speed control  
ꢀDC servo and robot drives  
ꢀDC choppers  
VGE(th)  
IC = 250 μA, VCE = VGE  
3.0  
5.0  
V
ICES  
VCE = VCES  
VGE = 0 V  
50  
1
μA  
mA  
ꢀUninterruptible power supplies (UPS)  
TJ = 150°C  
ꢀSwitched-mode and resonant-mode  
IGES  
VCE = 0 V, VGE  
=
20 V  
100  
2.9  
nA  
V
power supplies  
VCE(sat)  
IC = IT, VGE = 15 V, Note 1, 2  
2.2  
TJ = 125°C  
© 2006 IXYS All rights reserved  
DS99528(03/06)  
IXGR 50N90B2D1  
Symbol  
Test Conditions  
CharacteristicValues  
Min. Typ. Max.  
ISOPLUS247 Outline  
(TJ = 25°C unless otherwise specified)  
gfs  
IC  
= IT ; VCE = 10 V, Note 1, 2  
25  
40  
S
Cies  
Coes  
Cres  
2500  
180  
75  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
135  
23  
nC  
nC  
nC  
Qge  
Qgc  
IC = IT , VGE = 15 V, VCE = 0.5 VCES  
50  
Inductive load  
td(on)  
tri  
td(off)  
tfi  
20  
28  
ns  
ns  
IC = IT, VGE = 15 V  
VCE = 720 V, RG = Roff = 5 Ω  
350  
200  
4.7  
500 ns  
ns  
Note 2  
Eoff  
7.5 mJ  
td(on)  
tri  
20  
28  
ns  
ns  
Inductive load, TJ = 125°C  
IC = IT, VGE = 15 V  
Eon  
td(off)  
tfi  
1.5  
400  
420  
8.7  
mJ  
ns  
VCE = 720 V, RG = Roff = 5 Ω,  
Note 2  
ns  
Eoff  
mJ  
RthJC  
RthCH  
1.25 K/W  
K/W  
0.21  
Diode  
Symbol  
Conditions  
CharacteristicValues  
Min. Typ. Max.  
(TJ = 25°C unless otherwise specified  
)
VF  
IF = 30 A; Note1  
2.5  
1.8  
2.75  
V
V
TVJ = 150°C  
IRM  
trr  
IF = I , diF/dt = -100 A/μs; TVJ = 100°C  
5.5  
200  
11.5  
A
ns  
VR =T100 V; VGE = 0 V  
RthJC  
RthCH  
1.1 K/W  
K/W  
with heat transfer paste  
0.25  
Note 1: Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %  
Note 2: Test Current IT = 50A  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by4,835,592 4,931,844 5,049,961 5,237,481 6,162,665  
6,404,065 B1 6,683,344  
6,727,585  
one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343  
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505  
6,710,405B2 6,759,692  
6,710,463  
6771478 B2  
IXGR 50N90B2D1  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
@ 25 C  
º
300  
250  
200  
150  
100  
50  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
GE  
=15V  
13V  
V
GE  
= 15V  
13 V  
11V  
9V  
11V  
7V  
9V  
7V  
5V  
5V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
0
3
6
9
12  
15  
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
º
C
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.3  
V
GE  
= 15V  
13V  
V
GE  
= 15V  
I
= 100A  
C
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
11V  
9V  
7V  
I
= 50A  
= 25A  
C
I
5V  
C
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-50  
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
250  
T = -40ºC  
225  
200  
175  
150  
125  
100  
75  
J
= 25ºC  
T
J
25ºC  
125ºC  
I
= 100A  
50A  
C
25A  
50  
25  
0
3
4
5
6
7
8
9
10  
11  
12  
5
6
7
8
9
10 11 12 13 14 15  
VG E - Volts  
VG E - Volts  
© 2006 IXYS All rights reserved  
IXGR 50N90B2D1  
Fig. 8. Dependence of Turn-off  
Energy Loss on RG  
Fig. 7. Transconductance  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
40  
35  
30  
25  
20  
15  
10  
5
T = 125ºC  
I
= 100A  
C
J
V
= 15V  
GE  
CE  
V
= 720V  
T = -40ºC  
J
25ºC  
125ºC  
I
= 50A  
C
I
= 25A  
C
0
0
0
20  
5
25  
50  
75 100 125 150 175 200 225  
0
30  
60  
G
90  
120  
150  
R
- Ohms  
I C - Amperes  
Fig. 10. Dependence of Turn-off  
Energy Loss on Temperature  
Fig. 9. Dependence of Turn-Off  
Energy Loss on IC  
20  
18  
16  
14  
12  
10  
8
20  
18  
16  
14  
12  
10  
8
I
= 100A  
C
R
= 5Ω  
G
T = 125ºC  
J
V
GE  
V
CE  
= 15V  
= 720V  
R
V
= 5Ω  
G
= 15V  
GE  
CE  
I
= 50A  
C
V
= 720V  
T = 25ºC  
J
6
6
4
4
2
2
I
= 25A  
C
0
0
25 35 45 55 65 75 85 95 105 115 125  
30  
40  
50  
60  
70  
80  
90  
100  
T - Degrees Centigrade  
J
I C - Amperes  
Fig. 12. Dependence of Turn-off  
Switching Time on IC  
Fig. 11. Dependence of Turn-off  
Switching Time on RG  
1300  
1200  
1100  
1000  
900  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
td(off)  
td(off)  
tfi  
- - - - -  
I
= 25A  
50A  
C
tfi  
- - - - - -  
R
V
= 5Ω, V  
= 15V  
G
GE  
T = 125ºC  
J
= 720V  
CE  
100A  
V
= 15V  
GE  
CE  
V
= 720V  
T = 125ºC  
800  
J
700  
I
= 100A  
50A  
C
600  
T = 25ºC  
J
500  
25A  
400  
300  
200  
10  
15  
20  
25  
30  
35  
40  
45  
50  
20  
30  
40  
50  
60  
70  
80  
90  
100  
R G - Ohms  
I C - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGR 50N90B2D1  
Fig. 13. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
15  
13.5  
12  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
td(off)  
V
I
= 450V  
CE  
tfi  
- - - - - -  
I
= 25A  
50A  
C
= 50A  
C
Ω
RG  
=
5
I
= 10mA  
10.5  
9
G
100A  
VGE  
VCE  
=
=
15 V  
720V  
7.5  
6
4.5  
3
I
= 100A  
50A  
C
1.5  
0
25A  
25 35 45 55 65 75 85 95 105 115 125  
0
20  
40  
60  
80  
100  
120  
140  
T - Degrees Centigrade  
J
Q G - nanoCoulombs  
Fig. 16. Reverse-Bias Safe  
Operating Area  
Fig. 15. Capacitance  
10000  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
f = 1 MHz  
C
ies  
1000  
100  
10  
C
oes  
T = 125ºC  
J
C
R
= 10Ω  
G
res  
dV/dT < 10V/ns  
0
5
10  
15  
20  
25  
30  
35  
40  
100 200 300 400 500 600 700 800 900  
VC E - Volts  
VC E - Volts  
Fig. 17. Maximum Transient Thermal Resistance  
10  
1
0.1  
0.01  
1
0.1  
10  
Pulse Width - milliseconds  
100  
1000  
© 2006 IXYS All rights reserved  
IXGR 50N90B2D1  
Diode Curves  
70  
A
5
60  
A
μC  
TVJ=100°C  
TVJ=100°C  
60  
IF 50  
40  
50  
4
3
2
1
0
Qr  
IRM  
40 IF= 30A  
IF= 15A  
IF= 30A  
IF= 15A  
30  
20  
10  
0
TVJ=150°C  
TVJ=100°C  
30  
20  
10  
0
A/μs  
-diF/dt  
0
1
2
3
VF  
V
4
100  
1000  
0
200 400 600 1000  
A/μs  
-diF/dt  
Fig.20. Peak reverse current IRM  
120  
Fig.19. Reverse recovery charge Qr  
Fig.18. Forward current IF versus VF  
2.0  
220  
1.2  
μs  
ns  
TVJ=100°C  
TVJ=100°C  
V
200  
VFR  
tfr  
1.5  
Kf  
trr  
80  
0.8  
VFR  
180  
160  
140  
120  
1.0  
IF= 30A  
IF= 15A  
IRM  
tfr  
40  
0.4  
Qr  
0.5  
0.0  
0
0.
A/μs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
C
A/μs  
diF/dt  
TVJ  
-diF/dt  
Fig.23. Peak forward voltage VFR and  
Fig.21. Dynamic parameters Qr, IRM  
Fig.22. Recovery time trr versus -diF/dt  
10  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Time - seconds
Fig.24. Transient thermal resistance junction to case  
IXYS reserves the right to change limits, test conditions, and dimensions.  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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