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IXGD160N30PC-66

型号：

IXGD160N30PC-66

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

134 K

下载PDF手册
Advance Technical Information  
PolarTM IGBT DIE  
IXGD160N30PC-66  
VCES = 300 V  
For Plasma Display Applications  
Die Outline  
Notes:  
1. Wafer Diameter: 150 mm  
2. Width of all Scribe Streets: 100 µm  
3. Die Thickness: 200 20 µm  
4. Die Size Tolerance: 50 µm  
5. Top Bonding Pad Metal:  
E
30 KÅ nominally thick Al  
6. Back Metal: 3 layers of Ti, V/Ni & Au;  
1000Å nominally thick Au  
7. G = Gate; E = Emitter  
E
C = Collector (back side)  
8. Recommend wire bonding:  
Gate: 1 x 200 µm diameter Al wire  
Source: 6 x 300 µm diameter Al wire  
9. ESD sensitivity: Class 1C per JEDEC  
Standard No. 22-A114-B  
10. Wafers are visually inspected per  
IXYS Assembly Specification A0011.  
11. A black ink dot indicates a bad die.  
Dimensions in inches [mm}  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
300  
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
TJ  
TC = 25°C, Note 2  
160  
A
-55 ... +150  
°C  
Symbol  
Test Conditions1  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
5.0  
1
VGE(th)  
ICES  
IC = 4 mA, VCE = VGE  
2.5  
V
VCE = VCES  
VGE = 0 V  
µA  
TJ = 125°C  
200 µA  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
Notes:  
1. 100% die tests on wafer  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2005 IXYS All rights reserved  
DS99374(04/05)  
IXGD160N30PC-66  
Symbol  
(TJ = 25°C, unless otherwise specified)  
Test Conditions2  
Characteristic Values  
Min. Typ. Max.  
VCE(sat)  
VGE = 15V, IC = 80 A  
IC = 160 A  
1.35  
1.40  
1.75  
1.85  
1.7  
V
V
V
V
TJ = 125°C  
TJ = 125°C  
gfs  
IC = 80 A VCE = 10 V  
35  
51  
S
Pulse test, t < 300 ms, duty cycle < 2 %  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Cies  
Coes  
Cres  
3100  
300  
65  
pF  
pF  
pF  
Qg  
170  
26  
nC  
nC  
nC  
Qge  
Qgc  
IC = 80 A, VGE = 15 V, VCE = 0.5 VCES  
86  
td(on)  
tri  
td(off)  
tfi  
30  
110  
134  
50  
ns  
ns  
ns  
ns  
Resistive load, TJ = 25°C  
IC = 80 A, VGE = 15 V  
VCE = 240 V, RG = Roff = 5 Ω  
td(on)  
tri  
td(off)  
tfi  
32  
148  
137  
130  
ns  
ns  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 80 A, VGE = 15 V  
VCE = 240 V, RG = Roff = 5 Ω  
RthJC  
RthCK  
0.35 K/W  
K/W  
0.25  
Notes: 2. High current static and dynamic tests must be performed with the  
die properly attached to a suitable substrate, e.g. copper lead frame. Typical  
characteristic curves shown on the following pages were measured with the  
IXGD160N30PC die encapsulated in a TO-247 package.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2005 IXYS All rights reserved  
IXGD160N30PC-66  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25  
ºC  
@ 25 ºC  
320  
280  
240  
200  
160  
120  
80  
160  
140  
120  
100  
80  
V
= 15V  
V
GE  
= 15V  
13V  
GE  
13V  
11V  
11V  
1 0 V  
9V  
10V  
9V  
60  
8V  
7V  
40  
40  
20  
8V  
7V  
0
0
0
0
7
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.4  
15  
0
-50  
4
1
2
3
4
5
6
7
8
9
10  
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. Dependence of VCE( ) on  
sat  
º
C
Temperature  
160  
140  
120  
100  
80  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
V
= 15V  
13V  
GE  
V
= 15V  
GE  
11V  
I
= 160A  
10V  
C
9V  
8V  
I
= 80A  
C
60  
40  
7V  
5V  
I
= 40A  
75  
C
20  
0
0.4  
0.8  
1.2  
1.6  
2
-25  
0
25  
50  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
8
7
6
5
4
3
2
1
0
250  
225  
200  
175  
150  
125  
100  
75  
T
= 25 C  
º
J
I
= 160A  
80A  
C
40A  
T = 125ºC  
J
25ºC  
-40ºC  
50  
25  
0
8
9
10  
11  
12  
13  
14  
5
6
7
8
9
10  
11  
VG E - Volts  
VG E - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2005 IXYS All rights reserved  
IXGD160N30PC-66  
Fig. 8. Resistive Turn-On Rise Time  
vs. Gate Voltage  
Fig. 7. Transconductance  
80  
70  
60  
50  
40  
30  
20  
10  
0
260  
240  
220  
200  
180  
160  
140  
120  
100  
R
= 5Ω  
G
T = -40ºC  
J
I
= 80A  
C
25ºC  
125 C  
º
V
= 240V  
CE  
T = 125ºC  
J
T = 25ºC  
J
0
40  
80  
120  
I C - Amperes  
160  
200  
240  
10 11 12 13 14 15 16 17 18 19 20  
V G - Volts  
Fig. 10. Resistive Turn-On Rise Time  
vs. Collector Current  
Fig. 9. Resistive Turn-On Rise Time  
vs. Junction Temperature  
150  
140  
130  
120  
110  
100  
90  
150  
140  
130  
120  
110  
100  
90  
R
= 5Ω  
G
V
V
= 15V  
GE  
CE  
I
= 80A  
C
T = 125ºC  
J
= 240V  
I
= 40A  
C
R
= 5Ω  
G
T = 25 C  
º
J
V
GE  
V
CE  
= 15V  
= 240V  
80  
80  
25 35 45 55 65 75 85 95 105 115 125  
40  
45  
50  
55  
60  
I C - Amperes  
65  
70  
75  
80  
T - Degrees Centigrade  
J
Fig. 11. Resistive Turn-On Rise Time  
vs. Gate Resistance  
Fig. 12. Resistive Turn-On Delay Time  
vs. Gate Resistance  
42  
40  
38  
36  
34  
32  
30  
28  
26  
24  
240  
220  
200  
180  
160  
140  
120  
100  
T = 125ºC  
J
T = 125 C  
º
J
V
= 15V  
GE  
CE  
V
= 15V  
GE  
CE  
I
= 80A  
C
V
= 240V  
V
= 240V  
I
= 80A  
C
I
= 40A  
C
I
= 40A  
C
4
6
8
10  
R
12  
14  
16  
18  
20  
4
6
8
10  
R
12 14  
- Ohms  
16 18  
20  
- Ohms  
G
G
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2005 IXYS All rights reserved  
IXGD160N30PC-66  
Fig. 13. Resistive Turn-Off Switching  
Time vs. Junction Temperature  
Fig. 14. Resistive Turn-Off Switching  
Time vs. Collector Current  
180  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
I
= 40A  
C
T = 125ºC  
J
t d(off)  
t f  
- - - - - -  
I
= 80A  
C
t d(off)  
R
= 5Ω  
G
T = 25ºC  
J
t f  
R
V
- - - - - -  
= 5Ω  
V
V
= 15V  
GE  
CE  
G
= 240V  
60  
= 15V  
60  
GE  
CE  
40  
I
= 40A  
C
V
= 240V  
40  
20  
25 35 45 55 65 75 85 95 105 115 125  
T J - Degrees Centigrade  
40  
45  
50  
55  
60  
I C - Amperes  
65  
70  
75  
80  
Fig. 15. Resistive Turn-off Switching  
Time vs. Gate Resistance  
Fig. 16. Reverse-Bias Safe  
Operating Area  
350  
325  
300  
275  
250  
225  
200  
175  
150  
125  
180  
160  
140  
120  
100  
80  
t d(off)  
t f  
T
- - - - - -  
= 125ºC  
J
V
V
= 15V  
GE  
CE  
= 240V  
I
= 40A  
C
60  
T = 150ºC  
J
40  
R
= 10Ω  
G
dV/dT < 10V/ns  
20  
I
= 80A  
18  
C
0
50  
100  
150  
200  
250  
300  
350  
4
6
8
10  
12  
RG- Ohms  
14  
16  
20  
VC E - Volts  
Fig. 17. Gate Charge  
Fig. 18. Capacitance  
16  
14  
12  
10  
8
10000  
1000  
100  
f = 1 MHz  
V
= 150V  
CE  
I
I
= 80A  
C
G
C
= 10mA  
ies  
C
C
6
oes  
res  
4
2
0
10  
0
20  
40  
60 80 100 120 140 160 180  
Q G - nanoCoulombs  
0
5
10  
15  
20  
VC E - Volts  
25  
30  
35  
40  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2005 IXYS All rights reserved  
IXGD160N30PC-66  
Fig. 19 Maximum Transient Thermal Resistance  
1.00  
0.10  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2005 IXYS All rights reserved  
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