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2SK2203

型号：

2SK2203

品牌：

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数：

5 页

PDF大小：

32 K

下载PDF手册
2SK2203  
Silicon N-Channel MOS FET  
November 1996  
Application  
High speed power switching  
Features  
•
•
•
•
•
Low on-resistance  
High speed switching  
Low drive current  
4 V gate drive device can be driven from 5 V source  
Suitable for Switching regulator, DC-DC converter  
Outline  
TO-3PFM  
D
G
1
2
3
1. Gate  
2. Drain  
3. Source  
S
2SK2203  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
60  
VGSS  
±20  
V
ID  
50  
A
1
Drain peak current  
Body to drain diode reverse drain current  
Avalanche current  
ID(pulse)  
IDR  
IAP*3  
EAR*3  
*
200  
A
50  
A
50  
A
Avalanche energy  
214  
mJ  
W
°C  
°C  
Channel dissipation  
Channel temperature  
Storage temperature  
Pch*2  
60  
Tch  
150  
Tstg  
–55 to +150  
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %  
2. Value at Tc = 25 °C  
3. Value at Tch = 25 °C, Rg ≥ 50 Ω  
2
2SK2203  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test conditions  
Drain to source breakdown  
voltage  
V(BR)DSS  
V(BR)GSS  
IGSS  
60  
—
—
V
ID = 10 mA, VGS = 0  
Gate to source breakdown  
voltage  
±20  
—
—
V
IG = ±100 µA, VDS = 0  
Gate to source leak current  
—
—
1.0  
—
—
—
—
±10  
250  
2.25  
µA  
µA  
V
VGS = ±16 V, VDS = 0  
VDS = 25 V, VGS = 0  
ID = 1 mA, VDS = 10 V  
Zero gate voltage drain current IDSS  
Gate to source cutoff voltage VGS(off)  
Static drain to source on state RDS(on)  
resistance  
0.007 0.01  
Ω
ID = 25 A  
VGS = 10 V*1  
—
40  
—
0.009 0.013  
Ω
ID = 25 A  
VGS = 4 V*1  
Forward transfer admittance  
Input capacitance  
|yfs|  
65  
—
—
S
ID = 25 A  
VDS = 10 V*1  
Ciss  
8330  
pF  
VDS = 10 V  
VGS = 0  
f = 1 MHz  
Output capacitance  
Coss  
—
—
—
3500  
550  
50  
—
—
—
pF  
pF  
ns  
Reverse transfer capacitance Crss  
Turn-on delay time  
td(on)  
ID = 25 A  
VGS = 10 V  
RL = 1.2 Ω  
Rise time  
tr  
—
—
—
—
270  
—
—
—
—
ns  
ns  
ns  
V
Turn-off delay time  
Fall time  
td(off)  
tf  
1400  
560  
Body to drain diode forward  
voltage  
VDF  
0.95  
IF = 50 A, VGS = 0  
Body to drain diode reverse  
recovery time  
trr  
—
150  
—
ns  
IF = 50 A, VGS = 0,  
diF / dt = 50 A / µs  
Note 1. Pulse Test  
See characteristic curve of 2SK2121.  
3
2SK2203  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
10 µs  
1000  
80  
60  
40  
20  
300  
100  
30  
10  
Operation in  
this area is  
limited by R  
DS(on)  
3
1
Ta = 25 °C  
0
50  
100  
150  
200  
1
2
5
10 20  
50 100  
(V)  
Drain to Source Voltage  
V
Case Temperature Tc (°C)  
DS  
Normalized Transient Thermal Impedance vs. Pulse Width  
3
TC = 25°C  
D = 1  
0.5  
1.0  
0.3  
0.1  
0.2  
0.1  
θch–c (t) = γS (t) · θch–c  
θch–c = 2.08°C/W, TC = 25°C  
PDM  
0.02  
PW  
D =  
0.03  
0.01  
T
PW  
T
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
Pulse Width PW (s)  
4
2SK2203  
Notice  
When using this document, keep the following in mind:  
1. This document may, wholly or partially, be subject to change without notice.  
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or  
part of this document without Hitachi’s permission.  
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or  
any other reasons during operation of the user’s unit according to this document.  
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and  
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any  
intellectual property claims or other problems that may result from applications based on the examples  
described herein.  
5. No license is granted by implication or otherwise under any patents or other rights of any third  
party or Hitachi, Ltd.  
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL  
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.  
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are  
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL  
APPLICATIONS.  
Hitachi, Ltd.  
Semiconductor & IC Div.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan  
Tel: Tokyo (03) 3270-2111  
Fax: (03) 3270-5109  
For further information write to:  
Hitachi America, Ltd.  
Semiconductor & IC Div.  
2000 Sierra Point Parkway  
Brisbane, CA. 94005-1835  
U S A  
Hitachi Europe GmbH  
Electronic Components Group  
Continental Europe  
Dornacher Straße 3  
D-85622 Feldkirchen  
München  
Hitachi Europe Ltd.  
Electronic Components Div.  
Northern Europe Headquarters  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 0104  
Tel: 535-2100  
Tel: 415-589-8300  
Fax: 535-1533  
Fax: 415-583-4207  
Tel: 089-9 91 80-0  
Fax: 089-9 29 30 00  
Berkshire SL6 8YA  
United Kingdom  
Hitachi Asia (Hong Kong) Ltd.  
Unit 706, North Tower,  
World Finance Centre,  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon  
Hong Kong  
Tel: 0628-585000  
Fax: 0628-778322  
Tel: 27359218  
Fax: 27306071  
5
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