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2SK303G-V2-AE3-R

型号:

2SK303G-V2-AE3-R

品牌:

UTC[ Unisonic Technologies ]

页数:

3 页

PDF大小:

138 K

UNISONIC TECHNOLOGIES CO., LTD  
2SK303  
JFET  
LOW-FREQUENCY  
GENERAL-PURPOSE  
AMPLIFIER APPLICATIONS  
„
FEATURES  
* Ideal For Potentiometers  
* Analog Switches  
* Low Frequency Amplifiers  
* Constant Current Supplies  
* Impedance Conversion  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
S
S
S
S
S
S
3
2SK303L-x-AE3-R  
2SK303L-x-A3C-R  
2SK303L-x-AQ3-R  
2SK303L-x-T92-B  
2SK303L-x-T92-K  
2SK303L-x-T92-R  
2SK303G-x-AE3-R  
2SK303G-x-A3C-R  
2SK303G-x-AQ3-R  
2SK303G-x-T92-B  
2SK303G-x-T92-K  
2SK303G-x-T92-R  
SOT-23  
SOT-113S  
SOT-723  
TO-92  
D
D
D
G
G
G
G
G
G
D
D
D
Tape Reel  
Tape Reel  
Tape Reel  
Tape Box  
Bulk  
TO-92  
TO-92  
Tape Reel  
Note: Pin Assignment: G: Gate D: Drain S: Source  
„
MARKING  
2SK303-V2  
2SK303-V3  
2SK303-V4  
2SK303-V5  
V2  
V3  
V4  
V5  
L: Lead Free  
G: Halogen Free  
L: Lead Free  
G: Halogen Free  
L: Lead Free  
G: Halogen Free  
L: Lead Free  
G: Halogen Free  
www.unisonic.com.tw  
Copyright © 2013 Unisonic Technologies Co., Ltd  
1 of 3  
QW-R206-071,E  
2SK303  
JFET  
„
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
IG  
RATINGS  
30  
UNIT  
V
Drain to Source Voltage  
Gate to Source Voltage  
Gate Current  
-30  
V
10  
mA  
mA  
Drain Current  
ID  
20  
SOT-23  
200  
Power Dissipation  
SOT-113S/SOT-723  
TO-92  
PD  
100  
mW  
625  
Junction Temperature  
Storage Temperature  
TJ  
150  
°C  
°C  
TSTG  
-55 ~ +150  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Gate to Drain Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
ON CHARACTERISTICS  
Gate Cutoff Voltage  
BVGDS  
IDSS  
IG=-10µA  
-30  
0.6  
V
VDS=10V,VGS=0V  
VGS=-20V  
12.0 mA  
IGSS  
-1.0  
nA  
VGS(OFF) VDS=10V, ID=1µA  
-1  
-4  
V
Drain-Source On-State Resistance  
Forward Transfer Admittance  
DYNAMIC PARAMETERS  
Input Capacitance  
RDS(ON)  
|YFS|  
VDS=10mV, VGS=0V  
250  
6.0  
VDS=10V, VGS=0V, f =1MHz  
2.5  
mS  
CISS  
5
pF  
pF  
VDS=10V,VGS=0V,f =1MHz  
Reverse Transfer Capacitance  
CRSS  
1.5  
„
CLASSIFICATION OF IDSS  
RANK  
V2  
0.6 ~ 1.5  
V3  
1.2 ~ 3.0  
V4  
2.5 ~ 6.0  
V5  
IDSS (mA)  
5.0 ~ 12.0  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R206-071,E  
www.unisonic.com.tw  
2SK303  
JFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R206-071,E  
www.unisonic.com.tw  
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