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IXGF20N250

型号：

IXGF20N250

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

196 K

下载PDF手册
High Voltage IGBT  
For Capacitor Discharge  
Applications  
VCES = 2500V  
IC25 = 23A  
VCE(sat) ≤ 3.1V  
IXGF20N250  
( Electrically Isolated Tab)  
ISOPLUS i4-PakTM  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
2500  
2500  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
1
2
Isolated Tab  
5
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
23  
14  
A
A
1 = Gate  
2 = Emitter  
5 = Collector  
TC = 25°C, VGE = 19V, 1ms  
10ms  
105  
55  
A
A
SSOA  
V
GE= 15V, TVJ = 125°C, RG = 20Ω  
ICM = 60  
1500  
A
V
(RBSOA)  
Clamped Inductive Load  
TC = 25°C  
Features  
PC  
100  
W
ꢀ
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
TJM  
Tstg  
Isolated Mounting Surface  
4000V~ Electrical Isolation  
High Peak Current Capability  
Low Saturation Voltage  
Molding Epoxies Meet UL 94 V-0  
Flammability Classification  
-55 ... +150  
TL  
TSOLD  
1.6 mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
FC  
Mounting Force  
20..120 / 4.5..27  
Nm/lb.in.  
VISOL  
Weight  
50/60Hz, 1 Minute  
4000  
6
V~  
g
Applications  
ꢀ
Capacitor Discharge  
Pulser Circuits  
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
2500  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = 0.8 • VCES, VGE = 0V  
V
ꢀ
High Power Density  
5.0  
V
ꢀ
Easy to Mount  
10 μA  
750 μA  
Note 2, TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 20A, VGE = 15V, Note 1  
3.1  
V
DS99999C(06/12)  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXGF20N250  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS i4-PakTM (HV) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 20A, VCE = 10V, Note 1  
VGE = 20V, VCE = 15V, Note 1  
8
13  
S
A
IC(ON)  
190  
Cies  
Coes  
Cres  
1190  
53  
pF  
pF  
pF  
VCE = 15V, VGE = 25V, f = 1MHz  
IC = 20A, VGE = 15V, VCE = 1000V  
18  
Qg  
53  
8
nC  
nC  
nC  
Qge  
Qgc  
22  
td(on)  
57  
ns  
Resistive Switching Times  
IC = 40A, VGE = 15V  
Pin 1 = Gate  
Pin 2 = Emitter  
Pin 3 = Collector  
Tab 4 = Isolated  
tr  
td(off)  
160  
136  
ns  
ns  
VCE = 1250V, RG = 10Ω  
tf  
930  
ns  
RthJC  
RthCS  
RthJA  
1.25 °C/W  
°C/W  
0.15  
30  
°C/W  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Device must be heatsunk for high temperature leakage current  
measurements to avoid thermal runaway.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGF20N250  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
240  
200  
160  
120  
80  
VGE = 25V  
19V  
VGE = 25V  
23V  
15V  
13V  
21V  
19V  
11V  
17V  
15V  
9V  
13V  
11V  
7V  
5V  
40  
9V  
7V  
0
0
0
6
1
2
3
4
5
6
0
-50  
3
5
10  
15  
20  
25  
30  
150  
15  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 25V  
21V  
VGE = 15V  
17V  
15V  
13V  
11V  
I C = 80A  
I C = 40A  
9V  
7V  
I C = 20A  
5V  
7
1
2
3
4
5
6
8
-25  
0
25  
50  
75  
100  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
9
8
7
6
5
4
3
2
TJ = 25ºC  
TJ = - 40ºC  
25ºC  
I C = 80A  
125ºC  
40A  
20A  
10  
8
12  
14  
16  
VGE - Volts  
18  
20  
22  
24  
26  
4
5
6
7
8
9
10  
11  
12  
13  
14  
VGE - Volts  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXGF20N250  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
18  
16  
14  
12  
10  
8
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 1000V  
C = 20A  
I G = 10mA  
I
25ºC  
125ºC  
6
6
4
4
2
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Reverse-Bias Safe Operating Area  
Fig. 10. Capacitance  
10,000  
1,000  
100  
70  
60  
50  
40  
30  
20  
10  
0
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
G = 20Ω  
dv / dt < 10V / ns  
R
C
res  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
250  
500  
750  
1000  
1250  
1500  
1750  
2000  
2250  
2500  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
aaa  
2.00  
1.00  
D = 0.50  
D = 0.20  
D = tp / T  
D = 0.10  
D = 0.05  
0.10  
t
p
D = 0.02  
D = 0.01  
T
Single Pulse  
0.01  
0.000001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGF20N250  
Fig. 12. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 13. Resistive Turn-on Rise Time  
vs. Collector Current  
400  
350  
300  
250  
200  
150  
100  
50  
400  
350  
300  
250  
200  
150  
100  
RG = 10Ω , VGE = 15V  
CE = 1250V  
RG = 10Ω , VGE = 15V  
CE = 1250V  
V
V
I C = 80A  
TJ = 125ºC  
TJ = 25ºC  
I C = 40A  
20  
30  
40  
50  
60  
70  
80  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Switching Times  
vs. Gate Resistance  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
400  
350  
300  
250  
200  
150  
100  
50  
1400  
1200  
1000  
800  
600  
400  
200  
0
160  
150  
140  
130  
120  
110  
100  
90  
tf  
td(off)  
- - - -  
tf  
td(on)  
- - - -  
RG = 10Ω, VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 1250V  
VCE = 1250V  
I C = 40A  
I C = 40A  
I C = 80A  
I C = 80A  
0
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Resistive Turn-off Switching Times  
vs. Collector Current  
Fig. 17. Resistive Turn-off Switching Times  
vs. Gate Resistance  
2000  
1800  
1600  
1400  
1200  
1000  
800  
180  
170  
160  
150  
140  
130  
120  
110  
100  
90  
2000  
1800  
1600  
1400  
1200  
1000  
800  
2000  
1800  
1600  
1400  
1200  
1000  
800  
tf  
td(off  
) - - - -  
tf  
td(off) - - - -  
RG = 10Ω, VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 1250V  
VCE = 1250V  
I C = 40A  
TJ = 125ºC  
600  
600  
600  
I C = 80A  
400  
400  
400  
TJ = 25ºC  
200  
200  
200  
0
80  
0
0
20  
30  
40  
50  
60  
70  
80  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
RG - Ohms  
IC - Amperes  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_20N250(4P)6-07-12-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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