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IXGQ170N30PB

型号：

IXGQ170N30PB

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

110 K

下载PDF手册
Preliminary Technical Information  
PolarTM High Speed  
IGBT  
VCES  
ICP  
= 300 V  
= 360 A  
IXGQ170N30PB  
VCE(sat) ≤ 1.70 V  
for PDP Applications  
Symbol  
Test Conditions  
Maximum Ratings  
TO-3P  
VCES  
VGEM  
TJ = 25°C to 150°C  
300  
V
V
±30  
G
C
IC25  
TC = 25°C, IGBT chip capability  
TJ ≤ 150°C, tp < 10 μs  
Lead current limit  
170  
360  
75  
A
A
A
E
(TAB)  
C = Collector  
TAB = Collector  
ICP  
G = Gate  
E = Emitter  
IC(RMS)  
SSOA  
VGE = 15 V, TVJ = 150°C, RG = 20 Ω  
ICM = 170  
A
Features  
(RBSOA) Clamped inductive load, VCE < 300 V  
• International standard package  
• Low VCE(sat)  
PC  
TC = 25°C  
330  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
- for minimum on-state conduction  
losses  
• MOS Gate turn-on  
- drive simplicity  
TL  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Maximum plastic body temperature for 10 s. 260  
300  
°C  
°C  
TSOLD  
Md  
Applications  
• PDP Screen Drivers  
Mounting torque  
1.13/10 Nm/lb.in.  
5.5  
Weight  
g
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min. Typ. Max.  
VGE(th)  
ICES  
IC = 1 mA, VCE = VGE  
3.0  
5.0  
V
VCE = 300 V  
VGE = 0 V  
1 μA  
TJ = 125°C  
200 μA  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
VCE(sat)  
VGE = 15V,  
Note 1  
IC = 85 A  
1.32 1.70  
V
V
V
V
TJ = 125°C  
IC = 170 A  
TJ = 125°C  
1.36  
1.73  
1.89  
© 2006 IXYS All rights reserved  
DS99558A(05/06)  
IXGQ170N30PB  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ. Max.  
TO-3P (IXTQ) Outline  
gfs  
IC = 85 A, VCE = 10 V  
50  
80  
S
Cies  
Coes  
Cres  
5140  
315  
83  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
143  
26  
nC  
nC  
nC  
Qge  
Qgc  
IC = 85 A, VGE = 15 V, VCE = 0.5 VCES  
60  
td(on)  
tri  
td(off)  
tfi  
td(on)  
tri  
td(off)  
tfi  
24  
71  
ns  
ns  
ns  
ns  
Resistive load, TJ = 25°C  
IC =85 A, VGE = 15 V  
VCE = 240 V, RG = 2.4 Ω  
100  
82  
22  
81  
ns  
ns  
ns  
ns  
Resistive load, TJ = 125°C  
IC = 85 A, VGE = 15 V  
VCE = 240 V, RG = 2.4 Ω  
102  
157  
RthJC  
RthCS  
0.375 K/W  
K/W  
0.21  
Note 1: Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from data gathered during objective characterizations of preliminary engineering lots; but  
also may yet contain some information supplied during a pre-production design evaluation. IXYS  
reserves the right to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
6,259,123 B1  
6,306,728 B1  
IXGQ170N30PB  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Exteded Output Characteristics  
@ 25ºC  
240  
200  
160  
120  
80  
350  
300  
250  
200  
150  
100  
50  
V
= 15V  
V
= 15V  
GE  
GE  
13V  
11V  
13V  
11V  
9V  
9V  
7V  
40  
7V  
0
0
0
0
6
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
2.8  
15  
0
1
2
3
4
5
6
7
150  
9
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
240  
200  
160  
120  
80  
1.9  
1.7  
1.5  
1.3  
1.1  
0.9  
0.7  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
11V  
I
= 250A  
C
9V  
I
I
= 170A  
= 85A  
C
C
7V  
40  
I
= 50A  
C
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
-50  
-25  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
220  
200  
180  
160  
140  
120  
100  
80  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
T
= 25ºC  
J
I
= 250A  
C
170A  
85A  
T
J
= 125ºC  
50A  
25ºC  
- 40ºC  
60  
40  
20  
0
7
8
9
10  
11  
12  
13  
14  
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
VGE - Volts  
VGE - Volts  
© 2006 IXYS All rights reserved  
IXGQ170N30PB  
Fig. 8. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 7. Transconductance  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
200  
180  
160  
140  
120  
100  
80  
R
V
V
= 2.4  
Ω
G
= 15V  
GE  
CE  
= 240V  
I
= 170A  
C
T
J
= - 40ºC  
25ºC  
125ºC  
I
= 85A  
C
60  
0
30  
60  
90  
120  
150  
180  
210  
240  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 9. Resistive Turn-on Rise Time  
vs. Collector Current  
Fig. 10. Resistive Turn-on Switching Times  
vs. Gate Resistance  
88  
86  
84  
82  
80  
78  
76  
74  
72  
70  
115  
30  
29  
28  
27  
26  
25  
24  
23  
22  
t r  
td(on)  
- - - -  
R
V
V
= 2.4  
Ω
G
110  
105  
100  
95  
T
J
= 125ºC, V  
= 15V  
GE  
= 15V  
= 240V  
I
= 170A  
GE  
CE  
C
T
J
= 125ºC  
V
= 240V  
CE  
90  
85  
T
J
= 25ºC  
140  
I
= 85A  
C
80  
75  
80  
90  
100  
110  
120  
130  
150  
160  
170  
2
3
4
5
6
7
8
9
10  
IC - Amperes  
RG - Ohms  
Fig. 11. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 12. Resistive Turn-off Switching Times  
vs. Collector Current  
160  
150  
140  
130  
120  
110  
100  
90  
105.5  
104.0  
102.5  
101.0  
99.5  
160  
150  
140  
130  
120  
110  
100  
90  
103  
102  
101  
100  
99  
t f  
R
td(off)  
- - - -  
t f  
R
td(off)  
- - - -  
= 2.4 , V  
= 15V  
GE  
Ω
G
= 2.4 , V  
= 15V  
GE  
Ω
G
V
= 240V  
CE  
V
= 240V  
CE  
T
= 125ºC  
J
I
= 85A  
C
98  
98.0  
97  
96.5  
96  
T
J
= 25ºC  
95.0  
80  
95  
I
= 170A  
65  
C
80  
93.5  
70  
94  
70  
92.0  
60  
93  
25  
35  
45  
55  
75  
85  
95 105 115 125  
80  
90  
100 110 120 130 140 150 160 170  
TJ - Degrees Centigrade  
IC - Amperes  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXGQ170N30PB  
Fig. 13. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 14. Gate Charge  
170  
165  
160  
155  
150  
145  
140  
135  
130  
125  
120  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
90  
16  
14  
12  
10  
8
t f  
td(off)  
- - - -  
V
= 150V  
CE  
T
J
= 125ºC, V  
= 15V  
GE  
I
I
= 85A  
C
G
V
= 240V  
CE  
= 10 mA  
I
= 85A  
C
6
4
I
= 170A  
C
2
0
2
3
4
5
6
7
8
9
10  
0
15  
30  
45  
60  
75  
90  
105 120 135 150  
RG - Ohms  
QG - NanoCoulombs  
Fig. 15. Reverse-Bias Safe Operating Area  
Fig. 16. Capacitance  
200  
180  
160  
140  
120  
100  
80  
10,000  
1,000  
100  
C
C
ies  
oes  
60  
T
= 150ºC  
J
C
40  
res  
R
= 20  
Ω
G
dV / dT < 10V / ns  
20  
f = 1 MHz  
5
10  
0
0
10  
15  
20  
25  
30  
35  
40  
50  
75  
100 125 150 175 200 225 250 275 300 325  
VCE - Volts  
VCE - Volts  
Fig. 17. Maximum Transient Thermal Resistance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2006 IXYS All rights reserved  
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