IXGH 12N60CD1
Symbol
gfs
TestConditions
Characteristic Values
(T = 25°C, unless otherwise specified)
TO-247 AD Outline
J
min. typ. max.
I
= I ; V = 10 V,
5
11
S
C
C90
CE
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
P
Cies
Coes
Cres
860
100
15
pF
pF
pF
V
= 25 V, V = 0 V, f = 1 MHz
GE
CE
Qg
32
10
10
nC
nC
nC
e
Qge
Qgc
I = I , V = 15 V, V = 0.5 V
C C90 GE CE CES
Dim.
A
Millimeter
Min. Max.
Inches
Min. Max.
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
A
td(on)
tri
td(off)
tfi
20
20
ns
ns
ns
ns
mJ
Inductive load, TJ = 25°C
1
A
2
I = I , V = 15 V, L = 300 µH
b
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
C90
GE
V
= 0.8 V , R = R = 18 Ω
b
1
CE
CES
G
off
60
b
2
Remarks: Switching times may increase
for V (Clamp) > 0.8 V , higher T or
increased R
55
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
5.20
19.81 20.32
4.50
3.65
6.40 0.232 0.252
CE
CES
J
Eoff
0.09
G
e
5.72 0.205 0.225
.780 .800
.177
.140 .144
td(on)
tri
20
20
ns
ns
mJ
ns
ns
L
Inductive load, TJ = 125°C
L1
P3.55
I = I , V = 15 V, L = 300 µH
C
C90
GE
Q
5.89
4.32
Eon
td(off)
tfi
0.5
V
= 0.8 V , R = R = 18 Ω
CE
CES
G
off
R
S
5.49
.170 .216
242 BSC
85 180
85 180
6.15 BSC
Remarks: Switching times may increase
for V (Clamp) > 0.8 V , higher T or
increased R
CE
CES
J
Eoff
0.27 0.60 mJ
1.25 K/W
G
RthJC
RthCK
IGBT
0.25
K/W
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
min. typ. max.
IF = 15A; TVJ = 150°C
1.7
2
V
V
TVJ
=
25°C
2.5
2.5
IRM
VR = 100 V; IF =25A; -diF/dt = 100 A/µs
L < 0.05 µH; TVJ = 100°C
A
trr
IF = 1 A; -di/dt = 50 A/µs;
VR = 30 V TJ = 25°C
35
ns
RthJC
Diode
1.6 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
