IXGR 40N60B
IXGR 40N60BD1
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS247OUTLINE
gfs
IC = IT; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
30
42
S
Cies
3300
310
370
pF
pF
pF
40N60B
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz 40N60BD1
65
pF
Qg
116
23
nC
nC
nC
Qge
Qgc
IC = IT, VGE = 15 V, VCE = 0.5 VCES
55
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
td(on)
tri
td(off)
tfi
25
ns
ns
ns
Inductive load, TJ = 25°C
IC = IT, VGE = 15 V
30
Dim.
Millimeter
Inches
180 300
180 270
Min.
Max. Min. Max.
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
ns
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG
Eoff
2.7
4.0
mJ
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
td(on)
tri
25
30
ns
ns
C
D
E
0.61
0.80
20.80 21.34
15.75 16.13
.024 .031
.819 .840
.620 .635
Inductive load, TJ = 125°C
IC = IT, VGE = 15 V
Eon
td(off)
40N60B
40N60BD1
0.4
1.2
mJ
mJ
e
L
L1
5.45 BSC
19.81 20.32
.215 BSC
.780 .800
.150 .170
V
CE = 0.8 VCES, RG = Roff = 4.7 Ω
3.81
4.32
Remarks:Switchingtimesmay
increase for VCE (Clamp) > 0.8 VCES
higherTJ orincreasedRG
tfi
300
270
4.0
ns
ns
mJ
Q
R
5.59
4.32
6.20
4.83
.220 .244
.170 .190
,
Eoff
RthJC
RthCK
0.6 K/W
K/W
0.15
ReverseDiode(FRED)(IXGR40N60BD1)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
TestConditions
min. typ. max.
VF
IRM
IF = I , VGE = 0 V,
NoteT1
TJ = 150°C
1.3
1.8
V
V
IF = IT, VGE = 0 V, VR = 100 V TJ = 100°C,-di/dt = 100 A/µs
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V
7.5
A
trr
35
ns
RthJC
0.90 K/W
Note: 1. Pulse test, tp ≤ 300 ms, duty cycle:d ≤ 2 %
2. IT = 40A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
