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2SK2845(SM)

型号:

2SK2845(SM)

品牌:

TOSHIBA[ TOSHIBA ]

页数:

6 页

PDF大小:

740 K

2SK2845  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSIII)  
2SK2845  
Unit: mm  
Chopper Regulator, DC/DC Converter and Motor Drive  
Applications  
z
z
z
z
Low drainsource ON-resistance  
: R = 8.0 (typ.)  
DS (ON)  
High forward transfer admittance  
: |Y | = 0.9 S (typ.)  
fs  
Low leakage current : I  
DSS  
= 100 µA (max) (V  
= 720 V)  
DS  
Enhancement mode : V = 2.0~4.0 V (V  
th DS  
= 10 V, I = 1 mA)  
D
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drainsource voltage  
Symbol  
Rating  
Unit  
V
900  
900  
±30  
1
V
V
V
DSS  
Draingate voltage (R  
Gatesource voltage  
= 20 k)  
V
DGR  
GS  
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
D
Drain current  
A
JEDEC  
JEITA  
I
3
DP  
SC-64  
2-7B5B  
Drain power dissipation (Tc = 25°C)  
Single-pulse avalanche energy  
P
40  
W
D
AS  
AR  
TOSHIBA  
E
324  
mJ  
(Note 2)  
Weight: 0.36 g (typ.)  
Avalanche current  
I
1
4.0  
A
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
ch  
150  
Storage temperature range  
T
stg  
55~150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.)  
may cause this product to decrease in the reliability significantly even if the  
operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings. Please design the appropriate reliability  
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.  
reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristic  
Symbol  
Max  
3.125  
125  
Unit  
Thermal resistance, channel to case  
R
°C / W  
°C / W  
th (chc)  
th (cha)  
JEDEC  
Thermal resistance, channel to  
ambient  
R
JEITA  
SC-64  
TOSHIBA  
2-7B7B  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 594 mH, R = 25 , I  
Weight: 0.36 g (typ.)  
V
DD  
= 1 A  
AR  
ch  
G
Note 3: Repetitive rating: pulse width limited by maximum channel  
temperature  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2006-11-10  
2SK2845  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
= ±30 V, V = 0 V  
Min  
Typ.  
Max  
Unit  
Gate leakage current  
I
V
±30  
±10  
µA  
V
GSS  
GS  
DS  
Gatesource breakdown voltage  
V
V
I = ±10 µA, V = 0 V  
G DS  
(BR) GSS  
Drain cutoff current  
I
V
DS  
= 720 V, V = 0 V  
GS  
100  
µA  
DSS  
Drainsource breakdown  
I
= 10 mA, V  
= 0 V  
900  
V
(BR) DSS  
D
GS  
voltage  
Gate threshold voltage  
Drainsource ON-resistance  
Forward transfer admittance  
Input capacitance  
V
V
V
V
= 10 V, I = 1 mA  
2.0  
8.0  
0.9  
350  
8
4.0  
9.0  
V
S
th  
DS  
GS  
DS  
D
R
= 10 V, I = 0.5 A  
D
DS (ON)  
|Y |  
= 20 V, I = 0.5 A  
0.45  
fs  
D
C
C
iss  
V
DS  
= 25 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Reverse transfer capacitance  
Output capacitance  
rss  
C
oss  
40  
Rise time  
t
20  
70  
30  
r
Turnon time  
Switching time  
t
on  
ns  
Fall time  
t
f
Turnoff time  
t
95  
15  
off  
Total gate charge (gatesource  
plus gatedrain)  
Q
g
V
DD  
400 V, V  
= 10 V, I = 1 A  
nC  
GS  
D
Gatesource charge  
Q
6
9
gs  
Gatedrain (“Miller”) charge  
Q
gd  
SourceDrain Ratings and Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
1
Unit  
A
Continuous drain reverse current  
(Note 1)  
I
DR  
Pulse drain reverse current  
(Note 1)  
I
3
A
DRP  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
V
I
I
= 1 A, V  
= 1 A, V  
= 0 V  
750  
3
1.9  
V
DSF  
DR  
DR  
GS  
t
ns  
µC  
rr  
= 0 VdI / dt = 100 A / µs  
GS  
DR  
Q
rr  
Marking  
K2845  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
2
2006-11-10  
2SK2845  
3
2006-11-10  
2SK2845  
4
2006-11-10  
2SK2845  
R
V
= 25 Ω  
G
1
2
B
VDSS  
E
=
LI2 ⋅  
AS  
= 90 V, L = 594 mH  
DD  
B
V  
DD  
VDSS  
5
2006-11-10  
2SK2845  
RESTRICTIONS ON PRODUCT USE  
030619EAA  
The information contained herein is subject to change without notice.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
6
2006-11-10  
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