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IXGR32N90B2D1

型号：

IXGR32N90B2D1

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

8 页

PDF大小：

244 K

下载PDF手册
Advance Technical Information  
HiPerFASTTM IGBT  
with Fast Diode  
VCES  
IC25  
= 900 V  
= 47 A  
IXGR 32N90B2D1  
VCE(sat) = 2.9 V  
tfityp = 150 ns  
Electrically Isolated Base  
Symbol  
TestConditions  
Maximum Ratings  
ISOPLUS247(IXGR)  
E153432  
VCES  
VCGR  
TJ = 25OC to 150OC  
900  
900  
V
TJ = 25OC to 150OC; RGE = 1 MΩ  
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
IC25  
IC110  
ICM  
TC = 25OC  
47  
22  
A
A
A
ISOLATED TAB  
C = Collector  
E
TC = 110OC  
TC = 25OC, 1 ms  
G = Gate  
E = Emitter  
200  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125OC, RG = 10 Ω  
Clamped inductive load: VCL < 600V  
ICM = 64  
A
Features  
PC  
TC = 25OC  
160  
W
y Electrically isolated mounting tab  
OC  
OC  
OC  
y High frequency IGBT  
y High current handling capability  
y MOS Gate turn-on  
TJ  
-55 ... +150  
150  
TJM  
Tstg  
-55 ... +150  
- drive simplicity  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
OC  
Applications  
y PFC circuits  
y Uninterruptible power supplies (UPS)  
y Switched-mode and resonant-mode  
power supplies  
VISOL  
50/60Hz, RMS, T= I minute  
Iisol < 1mA  
2500  
3000  
V~  
V~  
FC  
Mounting force  
20..120/4.5..26  
5
N/lb  
g
y AC motor speed control  
y DC servo and robot drives  
y DC choppers  
Weight  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25OC unless otherwise specified)  
min. typ. max.  
Advantages  
y High power density  
VGE(th)  
ICES  
IC = 250 μA, VCE = VGE  
3.0  
5.0  
V
y Very fast switching speeds for high  
frequency applications  
VCE = VCES  
VGE = 0 V  
300  
1.5 mA  
μA  
TJ = 150OC  
TJ = 125OC  
IGES  
VCE = 0 V, VGE = ± 20 V  
IC = IT, VGE = 15 V, Note 1  
±100  
2.9  
nA  
VCE(sat)  
V
V
2.1  
© 2005 IXYS All rights reserved  
DS99457(12/05)  
IXGR 32N90B2D1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25OC unless otherwise specified)  
min. typ. max.  
ISOPLUS247 Outline  
IC = IT; VCE = 10 V,  
18  
28  
S
Cies  
Coes  
Cres  
1790  
146  
49  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
89  
15  
34  
nC  
nC  
nC  
Qge  
Qgc  
IC = IT , VGE = 15 V, VCE = 0.5 VCES  
td(on)  
tri  
td(off)  
tfi  
20  
22  
ns  
ns  
Inductive load, TJ = 25OC  
260  
150  
2.2  
400 ns  
ns  
IC = IT , VGE = 15 V  
VCE = 720 V, RG = Roff = 5 Ω  
Eoff  
4.5 mJ  
td(on)  
tri  
20  
22  
ns  
ns  
Eon  
td(off)  
tfi  
3.8  
mJ  
ns  
Inductive load, TJ = 125OC  
IC = IT , VGE = 15 V  
360  
330  
5.75  
ns  
VCE = 720 V, RG = Roff = 5 Ω  
1-GATE  
Eoff  
mJ  
2-COLLECTOR/CATHODE  
3 - EMITTER / ANODE  
4-NOCONNECTION  
RthJC  
RthCS  
0.8 K/W  
K/W  
0.15  
Ultrafast Diode  
Symbol  
Conditions  
Maximum Ratings  
IFRMS  
IF110  
60  
22  
A
A
TC = 110OC  
Symbol  
VF  
Conditions  
Characteristic Values  
min.  
typ. max.  
IF = 30 A  
2.75  
1.8  
V
V
TVJ = 125OC  
IRM  
trr  
IF = 50 A; diF/dt = -100 A/μs; TVJ = 100OC  
VR = 100 V; VGE = 0 V  
5.5 11.4  
190  
A
ns  
RthJC  
RthCS  
1.1 K/W  
K/W  
0.15  
Notes:  
1. Pulse test: Pulse width < 300 μs, duty cycle < 2 %;  
2. Test current IT = 32 A.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
IXGR 32N90B2D1  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
@ 25 C  
º
70  
60  
50  
40  
30  
20  
10  
0
240  
200  
160  
120  
80  
V
GE  
= 15V  
V
GE  
= 15V  
13V  
13V  
11V  
11V  
9V  
7V  
9V  
7V  
40  
5V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
0
2
4
6
8
VC E - Volts  
10 12 14 16 18 20  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
º
C
70  
60  
50  
40  
30  
20  
10  
0
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
V
GE  
= 15V  
13V  
V
= 15V  
GE  
11V  
I
= 64A  
C
9V  
7V  
I
= 32A  
= 16A  
C
I
C
5V  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-50  
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
6
5.5  
5
140  
120  
100  
80  
= 25ºC  
T
J
I
= 64A  
32A  
C
16A  
4.5  
4
3.5  
3
60  
T = 125ºC  
J
40  
25ºC  
-40ºC  
2.5  
2
20  
0
1.5  
4
5
6
7
8
9
10  
6
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
VG E - Volts  
© 2005 IXYS All rights reserved  
IXGR 32N90B2D1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
VCE =450V  
C = 32A  
I G = 10mA  
I
-40ºC  
=
T
J
25ºC  
12 5 ºC  
6
4
2
0
0
0
10 20 30 40 50 60 70 80 90 100  
0
20  
40  
60  
80  
100  
I C - Amperes  
Q G - nanoCoulombs  
Fig. 10. Reverse-Bias Safe  
Operating Area  
Fig. 9. Capacitance  
10000  
1000  
100  
70  
60  
50  
40  
30  
20  
10  
0
f = 1 MHz  
C
ies  
C
oes  
T = 125ºC  
J
R
=10Ω  
G
C
dV/dT < 10V/ns  
res  
10  
100 200 300 400 500 600 700 800 900  
0
5
10  
15  
20  
VC E - Volts  
25  
30  
35  
40  
VC E - Volts  
Fig. 11. Maxim um Transient Therm al Resistance  
1
0.1  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
IXGR 32N90B2D1  
Fig. 12. Dependence of Turn-off  
Energy Loss on Gate Resistance  
Fig. 13. Dependence of Turn-on  
Energy Loss on Gate Resistance  
18  
16  
14  
12  
10  
8
16  
14  
12  
10  
8
I
= 64A  
º
T = 125 C  
J
C
V
= 15V  
GE  
CE  
I
= 64A  
= 32A  
º
T = 125 C  
J
C
V
= 720V  
V
= 15V  
GE  
CE  
V
= 720V  
I
= 32A  
C
6
I
C
6
4
4
2
2
I
= 16A  
I
= 16A  
C
C
0
0
0
5
10 15 20 25 30 35 40 45 50  
0
5
10 15 20 25 30 35 40 45 50  
R
- Ohms  
R
- Ohms  
G
G
Fig. 14. Dependence of Turn-off  
Energy Loss on Collector Current  
Fig. 15. Dependence of Turn-on  
Energy Loss on Collector Current  
16  
14  
12  
10  
8
9
8
7
6
5
4
3
2
1
0
R
=5Ω  
G
T = 125ºC  
J
R
=5Ω  
G
V
= 15V  
GE  
CE  
V
= 15V  
GE  
CE  
T = 125ºC  
J
V
= 720V  
V
= 720V  
T = 25ºC  
J
6
T = 25ºC  
J
4
2
0
10  
20  
30  
40  
50  
60  
70  
10  
20  
30  
40  
50  
60  
70  
I C - Amperes  
I C - Amperes  
Fig. 17. Dependence of Turn-on  
Energy Loss on Temperature  
Fig. 16. Dependence of Turn-off  
Energy Loss on Temperature  
16  
14  
12  
10  
8
10  
R
=5Ω  
Ω
G
R
= 5  
9
8
7
6
5
4
3
2
1
0
G
I
= 64A  
C
V
V
= 15V  
GE  
CE  
V
V
= 15V  
GE  
= 720V  
= 720V  
CE  
I
= 64A  
C
I
= 32A  
= 16A  
C
I
= 32A  
C
6
4
2
I
C
I
= 16A  
C
0
25 35 45 55 65 75 85 95 105 115 125  
25 35 45 55 65 75 85 95 105 115 125  
T - Degrees Centigrade  
J
T - Degrees Centigrade  
J
© 2005 IXYS All rights reserved  
IXGR 32N90B2D1  
Fig. 18. Dependence of Turn-off  
Switching Time on Gate Resistance  
Fig. 19. Dependence of Turn-on  
Switching Time on Gate Resistance  
550  
525  
500  
475  
450  
425  
400  
375  
350  
400  
390  
380  
370  
360  
350  
340  
330  
320  
45  
40  
35  
30  
25  
20  
15  
180  
150  
120  
90  
60  
30  
0
td(off)  
tfi  
- - - - -  
td(on)  
tri  
- - - - -  
T = 125ºC, V = 15V  
J GE  
T = 125ºC, V = 15V  
J GE  
I
C
= 64A  
V
= 720V  
CE  
V
= 720V  
CE  
I
= 16A, 32A, 64A  
C
I
= 32A  
C
I
= 32A, 16A  
C
I
= 16A  
18  
C
4
6
8
10 12  
R G - Ohms  
14  
16  
18 20  
4
6
8
10  
12  
14  
16  
20  
R
- Ohms  
G
Fig. 21. Dependence of Turn-on  
Switching Time on Collector Current  
Fig. 20. Dependence of Turn-off  
Switching Time on Collector Current  
500  
30  
10 0  
90  
80  
70  
60  
50  
40  
30  
20  
10  
td(off)  
tfi  
- - - - -  
td(on)  
tri  
- - - -  
= 15V  
GE  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
450  
400  
350  
300  
250  
200  
150  
100  
R
G
= 15V  
= 5Ω, V  
R
G
= 5Ω, V  
GE  
V
= 720V  
V
= 720V  
CE  
CE  
º
T = 125 C  
J
T = 125  
J
º
C
º
T = 25 C  
J
º
T = 25 C  
J
0
10  
20  
30  
40  
50  
60  
70  
15 20 25 30 35 40 45 50 55 60 65  
I C - Amperes  
I C - Amperes  
Fig. 22. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 23. Dependence of Turn-on  
Switching Time on Temperature  
400  
350  
300  
250  
200  
150  
100  
40  
150  
125  
100  
75  
50  
25  
0
td(on)  
tri  
- - - - -  
35  
30  
25  
20  
15  
10  
R
G
= 15V  
= 5Ω , V  
GE  
I
= 64A, 32A, 16A  
C
V
= 720V  
CE  
I
= 64A  
C
I
= 64A, 32A, 16A  
C
I
= 32A  
C
td(off)  
tfi  
- - - - -  
R
=5Ω , V  
= 15V  
G
GE  
V
CE  
= 720V  
I
C
= 16A  
25 35 45 55 65 75 85 95 105 115 125  
25 35 45 55 65 75 85 95 105 115 125  
T J - Degrees Centigrade  
T - Degrees Centigrade  
J
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
IXGR 32N90B2D1  
Ultrafast Diode Characteristics  
70  
A
5
60  
A
TVJ= 100°C  
VR = 600V  
TVJ= 100°C  
VR = 600V  
μC  
60  
IF 50  
40  
50  
4
TVJ=150°C  
TVJ=100°C  
TVJ= 25°C  
Qr  
IRM  
IF= 60A  
IF= 30A  
IF= 15A  
IF= 60A  
IF= 30A  
IF= 15A  
40  
30  
20  
10  
0
3
2
1
0
30  
20  
10  
0
A/μs  
-diF/dt  
0
1
2
3
VF  
V
4
100  
1000  
0
200 400 600 1000  
A/μs  
-diF/dt  
Fig. 25. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 26. Peak reverse current IRM  
versus -diF/dt  
Fig. 24. Forward current IF versus VF  
2.0  
220  
120  
1.2  
TVJ= 100°C  
IF = 30A  
TVJ= 100°C  
ns  
tfr  
VR = 600V  
V
μs  
200  
VFR  
tfr  
1.5  
Kf  
VFR  
trr  
IF= 60A  
80  
40  
0
0.8  
IF= 30A  
IF= 15A  
180  
IRM  
1.0  
160  
0.4  
Qr  
0.5  
140  
120  
0.0  
0.
A/μs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
°C  
A/μs  
diF/dt  
TVJ  
-diF/dt  
Fig. 27. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 28. Recovery time trr versus  
-diF/dt  
Fig. 29. Peak forward voltage VFR  
and tfr versus diF/dt  
2
1
Constants for ZthJC calculation for non-  
isolated diode (DSEP 30-12A):  
DSEP 30-12AR  
DSEP 30-12A  
K/W  
i
Rthi (K/W)  
ti (s)  
ZthJC  
0.1  
1
2
3
0.465  
0.179  
0.256  
0.0052  
0.0003  
0.0397  
Constants for ZthJC calculation for  
isolated diode (DSEP 30-12AR):  
0.01  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
0.368  
0.0052  
0.0003  
0.0004  
0.0092  
0.001  
0.00001  
0.1417  
0.0295  
0.5604  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 30. Transient thermal resistance junction-to-case  
© 2005 IXYS All rights reserved  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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