IXGN 49N60BD3
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
SOT-227BminiBLOC
IC = IC90; VCE = 10 V,
35
50
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
4100
290
50
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qg
110
30
nC
nC
nC
Qge
Qgc
35
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
50
50
ns
ns
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = Roff = 2.7 Ω
110
150
3.0
250 ns
220 ns
4.0 mJ
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG
Eoff
td(on)
tri
50
60
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 2.7 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
Eon
td(off)
tfi
3.0
200
250
4.2
mJ
ns
,
ns
Eoff
mJ
RthJC
RthCK
0.50 K/W
K/W
0.05
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions
typ. max.
IR
TVJ = 25°C VR= VRRM
650
uA
TVJ = 150°C
2.5 mA
VF
IF = 60 A, TVJ = 150°C
1.90
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % TVJ = 25°C
2.50
IRM
IF = IC90, VGE = 0 V, -diF/dt = 100 A/µs
8.0
A
VR = 540 V
trr
IF = 1 A, -di/dt = 50 A/µs, VR = 30 V
TJ = 25°C
35
ns
RthJC
0.85 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
