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2SK3820-DL-E

型号：

2SK3820-DL-E

品牌：

ONSEMI[ ONSEMI ]

页数：

6 页

PDF大小：

241 K

下载PDF手册
Ordering number : EN8147A  
2SK3820  
N-Channel Power MOSFET  
http://onsemi.com  
100V, 26A, 60m TO-263-2L  
Ω,  
Features  
•
ON-resistance R (on)1=45m (typ.)  
Input capacitance Ciss=2150pF (typ.)  
4V drive  
Ω
DS  
•
•
Specifications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
100  
Unit  
V
V
DSS  
V
±20  
V
GSS  
I
26  
A
D
Drain Current (Pulse)  
I
DP  
PW 10 s, duty cycle 1%  
104  
A
≤
μ
≤
1.65  
50  
W
W
°C  
°C  
mJ  
A
Allowable Power Dissipation  
P
D
Tc=25°C  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
--55 to +150  
84.5  
26  
Avalanche Energy (Single Pulse) *1  
Avalanche Current *2  
E
AS  
I
AV  
Note : 1 V =20V, L=200μH, I =26A (Fig.1)  
*
DD  
2 L 200μH, single pulse  
AV  
*
≤
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Package Dimensions  
unit : mm (typ)  
Ordering & Package Information  
Device  
Package  
Shipping  
memo  
7535-001  
TO-263-2L  
(SC-83, TO-263)  
2SK3820-DL-1E  
800pcs./reel  
Pb Free  
2SK3820-DL-1E  
Packing Type: DL  
Marking  
4.5  
10.0  
8.0  
1.3  
4
K3820  
5.3  
LOT No.  
DL  
0.254  
0.5  
1
2
3
1.27  
0.8  
Electrical Connection  
2, 4  
2.54  
2.54  
1 : Gate  
2 : Drain  
3 : Source  
4 : Drain  
1
TO-263-2L  
3
Semiconductor Components Industries, LLC, 2013  
June, 2013  
61913 TKIM TC-00002869/61005QA MSIM TB-00000899 No.8147-1/6  
2SK3820  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
V
min  
100  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I =1mA, V =0V  
D GS  
(BR)DSS  
I
V
=100V, V =0V  
1
A
A
μ
DSS  
DS GS  
I
V
=±16V, V =0V  
±10  
2.6  
μ
GSS  
GS DS  
V
(off)  
|
V
=10V, I =1mA  
1.2  
11  
V
GS  
yfs  
DS D  
Forward Transfer Admittance  
V
I
=10V, I =13A  
D
19  
S
|
DS  
R
R
(on)1  
(on)2  
=13A, V =10V  
GS  
45  
56  
60  
80  
m
Ω
Ω
DS  
DS  
D
Static Drain-to-Source On-State Resistance  
I
D
=13A, V =4V  
GS  
m
Input Capacitance  
Ciss  
2150  
160  
110  
20  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Coss  
Crss  
V
=20V, f=1MHz  
pF  
pF  
ns  
DS  
t
t
t
t
(on)  
d
r
34  
ns  
See Fig.2  
Turn-OFF Delay Time  
Fall Time  
(off)  
185  
62  
ns  
d
f
ns  
Total Gate Charge  
Qg  
44  
nC  
nC  
nC  
V
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Diode Forward Voltage  
Qgs  
Qgd  
V
=50V, V =10V, I =26A  
GS  
7.8  
9.8  
1.0  
DS  
D
V
SD  
I =26A, V =0V  
S GS  
1.2  
Fig.1 Unclamped Inductive Switching Test Circuit  
Fig.2 Switching Time Test Circuit  
V
=50V  
V
DD  
IN  
10V  
0V  
D
L
≥50Ω  
RG  
I
=13A  
D
V
IN  
R =3.85Ω  
L
G
D
V
OUT  
PW=10μs  
D.C.≤1%  
2SK3820  
10V  
0V  
V
50Ω  
DD  
S
G
2SK3820  
P.G  
50Ω  
S
No.8147-2/6  
2SK3820  
I
D
-- V  
I -- V  
D GS  
DS  
40  
35  
30  
25  
20  
15  
10  
40  
35  
30  
25  
20  
15  
10  
Tc=25°C  
V
DS  
=10V  
4V  
V
GS  
=3V  
5
0
5
0
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
DS  
4.0  
4.5  
5.0  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
Drain-to-Source Voltage, V  
-- V  
IT07855  
Gate-to-Source Voltage, V  
GS  
-- V  
IT07856  
R
(on) -- V  
R
DS  
(on) -- Tc  
DS  
GS  
120  
110  
100  
90  
130  
120  
110  
100  
90  
I =13A  
D
80  
80  
70  
70  
60  
60  
50  
40  
25°C  
50  
30  
40  
--25  
20  
°C  
30  
20  
10  
0
2
3
4
5
6
7
8
9
10  
IT07857  
--50  
--25  
0
25  
50  
75  
100  
125  
150  
Gate-to-Source Voltage, V  
-- V  
Case Temperature, Tc -- °C  
IT07858  
GS  
⎪yfs⎪ -- I  
I
S
-- V  
SD  
D
7
5
100  
7
5
V
=0V  
V
=10V  
GS  
DS  
3
2
3
2
10  
7
5
10  
3
2
7
5
1.0  
7
5
3
2
3
2
0.1  
7
5
1.0  
3
2
7
5
0.1  
0.01  
2
3
5
7
2
3
5
7
2
3
5
0
0.3  
0.6  
0.9  
1.2  
1.5  
IT07860  
1.0  
10  
IT07859  
Diode Forward Voltage, V -- V  
SD  
Drain Current, I -- A  
D
Ciss, Coss, Crss -- V  
SW Time -- I  
DS  
D
5
5
f=1MHz  
V
V
=50V  
=10V  
DD  
GS  
3
2
3
2
Ciss  
1000  
100  
7
5
7
5
3
2
3
2
t (on)  
d
100  
10  
7
5
7
2
3
5
7
2
3
5
7
2
3
5
0
5
10  
15  
20  
25  
30  
0.1  
1.0  
10  
Drain Current, I -- A  
IT07861  
Drain-to-Source Voltage, V  
DS  
-- V  
IT07862  
D
No.8147-3/6  
2SK3820  
A S O  
V
-- Qg  
GS  
10  
9
3
2
I
=104A(PW≤10μs)  
V
=50V  
DP  
DS  
100  
7
5
3
2
I =26A  
D
I =26A  
D
8
7
10  
7
5
6
3
2
5
1.0  
Operation in  
this area is  
7
4
5
3
2
limited by R (on).  
3
DS  
0.1  
2
7
5
3
2
Tc=25°C  
Single pulse  
1
0
0.01  
0.1  
2
3
5
7
2
3
5
7
2
3
5
7
2 3  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
1.0  
10  
100  
Drain to Source Voltage, V -- V IT17015  
DS  
Total Gate Charge, Qg -- nC  
IT07863  
P
-- Ta  
P
-- Tc  
D
D
2.0  
60  
50  
40  
30  
20  
1.65  
1.5  
1.0  
0.5  
0
10  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- °C  
IT07811  
Case Temperature, Tc -- °C  
IT07822  
No.8147-4/6  
2SK3820  
Outline Drawing  
Land Pattern Example  
2SK3820-DL-1E  
Mass (g) Unit  
Unit: mm  
1.5  
mm  
* For reference  
No.8147-5/6  
2SK3820  
Note on usage : Since the 2SK3820 is a MOSFET product, please avoid using this device in the vicinity of  
highly charged objects.  
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at  
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no  
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the  
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical  
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use  
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in  
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for  
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors  
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or  
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the  
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PS No.8147-6/6  
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