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IXGN200N60A2

型号：

IXGN200N60A2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

553 K

下载PDF手册
IXGN 200N60A2 VCES  
IC25  
= 600 V  
= 200 A  
IGBT  
Optimized for Switching  
up to 5 kHz  
VCE(sat) = 1.35 V  
PreliminaryDataSheet  
E
Symbol  
TestConditions  
Maximum Ratings  
SOT-227B,miniBLOC  
E c  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
G
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
E c  
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1 ms  
200  
100  
400  
A
A
A
C
G = Gate, C = Collector, E = Emitter  
c
either emitter terminal can be used as  
Main or Kelvin Emitter  
SSOA  
V
= 15 V, TVJ = 125°C, RG = 2.0 Ω  
I
= 200  
A
(RBSOA)  
CGlaE mped inductive load  
@C0M.8 VCES  
700  
PC  
TC = 25°C  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z
International standard package  
miniBLOC  
z
Aluminium nitride isolation  
- high power dissipation  
VISOL  
50/60 Hz  
ISOL ≤ 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
z
Isolation voltage 3000 V~  
I
z
Very high current IGBT  
z
Md  
Mounting torque  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Low VCE(sat) for minimum on-state  
Terminal connection torque (M4)  
conduction losses  
z
MOS Gate turn-on  
Weight  
30  
g
- drive simplicity  
z
Low collector-to-case capacitance  
(< 50 pF)  
z
Low package inductance (< 5 nH)  
- easy to drive and to protect  
Symbol  
TestConditions  
Characteristic Values  
Applications  
z
(TJ = 25°C, unless otherwise specified)  
AC motor speed control  
z
min. typ. max.  
DC servo and robot drives  
z
DC choppers  
z
VGE(th)  
ICES  
IC = 1 mA, VCE = VGE  
2.5  
5.5  
V
Uninterruptible power supplies (UPS)  
z
Switch-mode and resonant-mode  
VCE = V  
T = 25°C  
TJJ = 125°C  
50  
2
µA  
VGE = 0CVES  
mA  
power supplies  
Advantages  
IGES  
VCE = 0 V, VGE = 20 V  
IC = IC110, VGE = 15 V  
400  
nA  
V
z
Easy to mount with 2 screws  
z
VCE(sat)  
1.2  
1.35  
Space savings  
z
High power density  
© 2003 IXYS All rights reserved  
DS99087A(11/03)  
IXGN 200N60A2  
Symbol  
gfs  
TestConditions  
Characteristic Values  
SOT-227BminiBLOC  
(TJ = 25°C, unless otherwise specified)  
min. typ.  
max.  
IC = 60 A; VCE = 10 V,  
70  
106  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
Cies  
Coes  
Cres  
9900  
740  
190  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = IC110, VGE = 15 V, VCE = 0.5 VCES  
Inductive load, TJ = 25°C  
Qg  
Qge  
Qgc  
480  
63  
169  
nC  
nC  
nC  
td(on)  
tri  
td(off)  
tfi  
60  
45  
360  
250  
5
ns  
ns  
ns  
ns  
mJ  
IC = IC110, VGE = 15 V  
VCE = 0.8 VCES, RG = Roff = 2.0 Ω  
Eoff  
td(on)  
tri  
Eon  
td(off)  
tfi  
60  
60  
3.0  
290  
660  
12  
ns  
ns  
mJ  
ns  
ns  
mJ  
Inductive load, TJ = 125°C  
IC = IC110, VGE = 15 V  
VCE = 0.8 VCES, RG = Roff = 2.4 Ω  
Eoff  
RthJC  
RthCK  
0.17 K/W  
K/W  
0.05  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGN 200N60A2  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
350  
300  
250  
200  
150  
100  
50  
200  
175  
150  
125  
100  
75  
VGE = 15V  
VGE = 15V  
9V  
13V  
11V  
13V  
11V  
9V  
7V  
7V  
50  
25  
5V  
1.25 1.5 1.75  
5V  
0
0
0.25 0.5 0.75  
1
2
2.25  
0
-50  
4
0.5  
1
1.5  
2
2.5  
3
3.5  
4
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
200  
175  
150  
125  
100  
75  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 15V  
13V  
IC = 200A  
11V  
9V  
7V  
5V  
VGE = 15V  
IC = 100A  
IC = 50A  
50  
25  
0
0.25 0.5 0.75  
1
1.25 1.5 1.75  
2
2.25  
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emiiter Voltage  
Fig. 6. Input Admittance  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
350  
300  
250  
200  
150  
100  
50  
TJ = 25ºC  
TJ = 125ºC  
25ºC  
IC = 200A  
-40ºC  
100A  
50A  
0
5
6
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
4.5  
5
5.5  
6
6.5  
7
7.5  
8
VG E - Volts  
© 2003 IXYS All rights reserved  
IXGN 200N60A2  
Fig. 7. Transconductance  
Fig. 8. Dependence of E on RG  
off  
200  
180  
160  
140  
120  
100  
80  
35  
30  
25  
20  
15  
10  
5
IC = 200A  
TJ = -40ºC  
25ºC  
125ºC  
TJ = 125ºC  
VGE = 15V  
VCE = 480V  
IC = 100A  
IC = 50A  
60  
40  
20  
0
0
0
50  
0
50  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
I C - Amperes  
R G - Ohms  
Fig. 10. Dependence of E on  
off  
Fig. 9. Dependence of E on Ic  
off  
Temperature  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
RG = 2.4 Ω  
VGE = 15V  
VCE = 480V  
RG = 2.4 Ω  
VGE = 15V  
VCE = 480V  
IC = 200A  
TJ = 125ºC  
IC = 100A  
IC = 50A  
TJ = 25ºC  
0
0
75  
100  
125  
150  
175  
200  
25 35 45 55 65 75 85 95 105 115 125  
I C - Amperes  
TJ - Degrees Centigrade  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
100000  
10000  
1000  
15  
12  
9
f = 1 MHz  
VCE = 300V  
IC = 100A  
IG = 10mA  
C
ies  
6
C
oes  
3
C
res  
0
100  
50 100 150 200 250 300 350 400 450 500  
0
5
10  
15  
20  
25  
30  
35  
40  
VC E - Volts  
Q G - nanoCoulombs  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGN 200N60A2  
Fig. 13. Maxim um Transient Therm al Resistance  
0.18  
0.16  
0.14  
0.12  
0.1  
0.08  
0.06  
0.04  
0.02  
0
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2003 IXYS All rights reserved  
厂商 型号 描述 页数 下载

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