找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

2SK4047-01S

型号:

2SK4047-01S

品牌:

FUJI[ FUJI ELECTRIC ]

页数:

8 页

PDF大小:

530 K

http://www.fujielectric.co.jp/products/semiconductor/index.html  
2SK4047-01S  
FUJI POWER MOSFET  
Automotive  
Trench Power MOSFET (2nd Gen.) series  
N-Channel enhancement mode power MOSFET  
Features  
Outline Drawings [mm]  
Equivalent circuit schematic  
Low on-state resistance  
Low switching loss  
100% avalanche tested  
Drain (D)  
Gate (G)  
Applications  
Source (S)  
Automotive switching applications  
Absolute Maximum Ratings at Tc=25(unless otherwise specified)  
Description  
Symbol  
VDS  
VDSX  
ID  
Characteristics  
Unit  
V
Remarks  
VGS=-20V  
60  
30  
Drain-Source Voltage  
V
Continuous Drain Current  
±80  
A
Pulsed Drain Current  
IDP  
±320  
+30/-20  
80  
A
Gate-Source Voltage  
VGS  
IAS  
V
Non-Repetitive Maximum Avalanche current  
Non-Repetitive Maximum Avalanche Energy  
Maximum Power Dissipation  
A
Note*1  
Note*2  
EAS  
PD  
274.5  
195  
mJ  
W
Tch  
150  
Operating and Storage Temperature range  
Tstg  
-55 to +150  
Note*1 : Tch150,See Fig.1 and Fig.2  
Note*2 : Starting Tch=25,L=28.6μH,VCC=48V,RG=50Ω,See Fig.1 and Fig.2  
EAS limited by maximum channel temperature and avalanche current.  
See to Avalanche Energy graph of page 4  
Electrical Characteristics at Tc=25(unless otherwise specified)  
Static Ratings  
Description  
Symbol  
BVDSS  
Conditions  
Min.  
Typ.  
Max.  
Unit  
V
ID=1mA  
VGS=0V  
60  
30  
2.5  
Drain-Source Breakdown Voltage  
ID=1mA  
BVDSX  
VGS(th)  
IDSS  
3.0  
1
V
V
VGS=-20V  
ID=10mA  
VDS= VGS  
Gate Threshold Voltage  
3.5  
100  
100  
6.5  
VDS= 60V  
VGS=0V  
Zero Gate Voltage Drain current  
Gate-Source Leakage current  
Drain-Source On-State Resistance  
Ta=25℃  
μA  
nA  
mΩ  
VGS=+30V/-20V  
VDS= 0V  
IGSS  
10  
5.0  
ID=40A  
RDS(on)  
VGS=10V  
1
Jul. 2013  
2SK4047-01S  
FUJI POWER MOSFET  
Automotive  
http://www.fujielectric.co.jp/products/semiconductor/index.html  
Dynamic Ratings  
Description  
Symbol  
gfS  
Conditions  
Min.  
25  
Typ.  
45  
Max.  
Unit  
S
ID=40A  
Forward Transconductance  
VDS=10V  
Input Capacitance  
CiSS  
CoSS  
CrSS  
td(on)  
tr  
4500  
950  
450  
35  
VDS=25V  
VGS=0V  
f=1MHz  
Output Capacitance  
pF  
ns  
nC  
Reverse Transfer Capacitance  
Turn-On Time  
Turn-Off Time  
VCC=30V, VGS=10V  
ID=80A, RG=10Ω  
45  
td(off)  
tf  
80  
See Fig.3 and Fig.4  
55  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
QG  
95  
VDD=30V, ID=80A  
VGS=10V  
QGS  
QGD  
30  
See Fig.5  
20  
Reverse Ratings  
Description  
Symbol  
IAV  
Conditions  
Min.  
80  
Typ.  
Max.  
Unit  
A
L=28.6μH, Tch=25℃  
Avalanche Capability  
See Fig.1 and Fig.2  
IF=80A, VGS=0V  
Diode Forward On- Voltage  
VSD  
0.95  
1.5  
V
Tch=25℃  
Reverse Recovery Time  
Reverse Recovery Charge  
trr  
IF=40A, VGS=0V  
-di/dt=100A/μs  
Tch=25℃  
150  
ns  
Qrr  
0.18  
μC  
Thermal Characteristics  
Description  
Symbol  
Rth(ch-c)  
Rth(ch-a)  
Min.  
Typ.  
Max.  
0.641  
75.0  
Unit  
/W  
/W  
Cannel to Case  
Cannel to Ambient  
2
2SK4047-01S  
FUJI POWER MOSFET  
Automotive  
http://www.fujielectric.co.jp/products/semiconductor/index.html  
Power Dissipation  
PD=f(Tc)  
Typical output characteristics  
ID=f(VDS):80μs pulse test,Tc=25℃  
180  
250  
200  
150  
100  
50  
VGS=20[V]  
10V  
5.5V  
160  
140  
120  
100  
80  
5V  
4.5V  
4V  
60  
40  
20  
0
0
0
25  
50  
75  
Tc [℃]  
100  
125  
150  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
Typical transfer characteristics  
ID=f(VGS):80μs pulse test,VDS=10V,Tch=25
100  
10  
1
0.1  
0
1
2
3
4
5
6
7
8
9
1
VGS [V]  
Typical Drain-Source on-State Resistance  
RDS(on)=f(ID):80s pulse test,Tch=25℃  
Drain-source on-state resistance  
RDS(on)=f(Tch):ID=40A,VGS=10V  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
Vgs=4[V]  
4.5V  
5V  
max.  
typ.  
5.5V  
6
10V  
20V  
4
2
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID [A]  
Tch [℃]  
3
2SK4047-01S  
FUJI POWER MOSFET  
Automotive  
http://www.fujielectric.co.jp/products/semiconductor/index.html  
Gate Threshold Voltage vs. Tch  
VGS(th)=f(Tch):VDS=VGS,ID=10mA  
Typical Gate Charge Characteristics  
VGS=f(Qg):ID=80A,Tch=25℃  
25  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
20  
Max.  
15  
typ.  
Min.  
Vcc=12V  
30V  
48V  
10  
5
0
0
50  
100  
150  
200  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Tch [℃]  
Qg [nC]  
Typical Forward Characteristics of Reverse Diode  
-ID=f(VSD):80μs pulse test,Tch=25℃  
110  
Typical capacitances  
C=f(VDS):VGS=0V,f=1MHz  
10000  
100  
90  
Ciss  
Coss  
80  
10V  
70  
5V  
60  
VGS=0[V]  
1000  
50  
40  
30  
20  
10  
0
Crss  
100  
0.01  
0.1  
1
10  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
VDS [V]  
VSD [V]  
Maximum Avalanche energy vs. starting Tch  
Eas=f(starting Tch):Vcc=48V,IAV≦80A , single pulse  
Typical Switching Characteristics vs. ID  
t=f(ID):Vcc=30V,VGS=10V,RG=10Ω  
800  
1000  
IAS=32A  
700  
600  
500  
400  
300  
200  
100  
0
IAS=48A  
IAS=80A  
td(off)  
100  
tf  
td(on)  
tr  
10  
0
25  
50  
75  
100  
125  
150  
0.1  
1
10  
100  
ID [A]  
Starting Tch [℃]  
4
2SK4047-01S  
FUJI POWER MOSFET  
Automotive  
http://www.fujielectric.co.jp/products/semiconductor/index.html  
Maximum Avalanche Current vs. starting Tch  
I(AV)=f(starting Tch) , single pulse  
Drain-Sourse Breakdown Voltage vs. Vgs  
BVDSX=f(VGS):Tch=25℃  
100  
100  
80  
60  
40  
20  
0
75  
50  
25  
0
0
-10  
-20  
VGS [V]  
-30  
-40  
-50  
0
25  
50  
75  
100  
125  
150  
Starting Tch [℃]  
Maximum Transient Thermal Impedance  
Zth(ch-c)=f(t):D=0  
101  
100  
10-1  
10-2  
10-3  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
t [sec]  
5
2SK4047-01S  
FUJI POWER MOSFET  
Automotive  
http://www.fujielectric.co.jp/products/semiconductor/index.html  
6
2SK4047-01S  
FUJI POWER MOSFET  
Automotive  
http://www.fujielectric.co.jp/products/semiconductor/index.html  
Out view  
7
2SK4047-01S  
FUJI POWER MOSFET  
Automotive  
http://www.fujielectric.co.jp/products/semiconductor/index.html  
WARNING  
1.This Data Sheet contains the product specifications, characteristics, data, materials, and structures as of Jul 2013.  
The contents are subject to change without notice changes or other reasons.  
When using a product listed in this Data Sheet, be sure to obtain the latest specifications.  
2.All applications described in this Data Sheet exemplify the use of Fuji’s products for reference only.  
No right or license, either express or implied, under any patent, trade secret or other intellectual property right  
owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted.  
Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement  
or alleged infringement of other’s intellectual property rights which may arise from the use of the applications  
described herein.  
3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor  
products may become faulty.  
When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety  
measures to prevent design failsafe, flame retardant, and free of malfunction.  
4.The produced introduced in this Data Sheet are intended for use in the following electronic and electrical  
equipment which has normal reliability requirements.  
Automotive  
Machine tools AV equipment Measurement equipment Personal equipment  
Electrical home appliances etc.  
Computers  
OA equipment  
Communications equipment (Terminal devices)  
Industrial robots  
5.If you need to use a product in this Data Sheet for enquiring higher reliability than normal, such as for the  
equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval.  
When using these products for such equipment, take adequate measures such as a backup system to prevent the  
equipment from malfunctioning even if a Fuji’s product incorporated in equipment becomes faulty.  
Backbone network equipment  
Traffic-signal control equipment  
Medical equipment  
Transportation equipment (automobiles, trains, ships, etc.)  
Gas alarms, leakage gas auto breakers  
Burglar alarms, fire alarms, emergency equipment etc.  
6.Do not use products in this Data Sheet for the equipment requiring strict reliability such as the following and  
equivalents strategic equipment (without limitation).  
Aerospace equipment  
Aeronautical equipment  
Nuclear control equipment  
Submarine repeater equipment  
7. As for a part of this Data Sheet or all the reprint reproductions, the approval of Fuji Electric Co., Ltd. by the  
document is necessary.  
8.If you have any question about any portion in this Data Sheet , ask Fuji Electric Co., Ltd. or its sales agents before  
using the product.  
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in  
accordance with instructions set forth herein.  
8
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.243418s