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2SK2593G

型号:

2SK2593G

品牌:

PANASONIC[ PANASONIC ]

页数:

4 页

PDF大小:

206 K

This product complies with the RoHS Directive (EU 2002/95/EC).  
Silicon Junction FETs (Small Signal)  
2SK2593G  
Silicon N-channel junction FET  
For low-frequency amplification  
For switching circuits  
Features  
Package  
Low noise figure NF  
Code  
High gate-drain voltage (source open) VGDO  
SSMini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing.  
SSMin-F3  
Pin
1: So
rain  
3: Gat
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Drain-sourse voltage  
Symbol  
VDS  
VDO  
VGSO  
ID  
g  
Unit  
V
Marking Symbol: 2B  
55  
55  
Gate-drain voltage (Source open)  
Gate-source voltage (Drain ope
Drain current  
V
55  
V
30  
mA  
mA  
mW  
°C  
Gate current  
IG  
0  
Power dissipation  
PD  
125  
Channel temperure  
Storage empeature  
125  
55 to +125  
°C  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Gate-drain er votage  
Drain-
Symbol  
VGDS  
IDSS  
Conditions  
IG = −100 µA, VDS = 0  
Min  
55  
1.0  
Typ  
Max  
Unit  
V
VDS = 10 V, VGS = 0  
6.5  
10  
5  
mA  
nA  
V
Gate-sourcnt  
Gate-source cuoltage  
Forward transfer admittance  
IGSS  
VGS = −30 V, VDS = 0  
VGSC  
Yfs  
Ciss  
VDS = 10 V, ID = 10 µA  
VDS = 10 V, ID = 5 mA, f = 1 kHz  
VDS = 10 V, VGS = 0, f = 1 MHz  
2.5  
7.5  
6.5  
mS  
pF  
Short-circuit forward transfer capacitance  
(Common source)  
Crss  
NF  
1.9  
2.5  
pF  
Reverse transfer capacitance  
(Common source)  
Noise figure  
VDS = 10 V, VGS = 0, f = 100 Hz  
Rg = 100 kΩ  
dB  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
P
Q
IDSS (mA)  
1.0 to 3.0  
2.0 to 6.5  
Publication date: May 2008  
SJF00064BED  
1
This product complies with the RoHS Directive (EU 2002/95/EC).  
2SK2593G  
PD Ta  
ID VDS  
ID VGS  
12  
VDS = 10 V  
Ta = 25°C  
VGS = 0.7 V  
Ta = −25°C  
25°C  
120  
80  
4
2
8
4
0
0.5
V  
85°C  
0.09  
V
40  
0
0.1 V  
0.3 V  
0.9  
0.5  
0.1  
0.3  
0
2
4
0
40  
80  
120  
(
)
V
Gate-source voltage VGS  
(
V
Drain-urce voltage VDS  
(
)
Ambient temperature Ta °C  
Yfs  VGS  
Yfs  ID  
10  
8
VDS = 1
Ta =
VDS = 10 V  
Ta = 25°
0.6  
0.4  
0.2  
6
2
0
0
0
2
4
6
8
0.4  
8  
1.2  
(
)
)
V
Drain current ID mA  
GvoltagVGS  
SJF00064BED  
2
This product complies with the RoHS Directive (EU 2002/95/EC).  
2SK2593G  
SSMini3-F3  
Unit: mm  
1.60 +00..0035  
0.26 +00..0025  
3
1
2
0.13 +00..0025  
0.50)  
(0.
1.00 0.05  
SJF00064BED  
3
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other  
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other  
company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-  
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product  
Standards in advance to make sure that the latest specifictions saisfy your requirements.  
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions  
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute  
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any  
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure  
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire  
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.  
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which  
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.  
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita  
Electric ndurial Co., Ltd.  
厂商 型号 描述 页数 下载

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2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

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2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

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2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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