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2SK2399(2-7J1B)

型号:

2SK2399(2-7J1B)

品牌:

TOSHIBA[ TOSHIBA ]

页数:

6 页

PDF大小:

423 K

2SK2399  
2
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)  
2SK2399  
Chopper Regulator, DCDC Converter and Motor Drive  
Unit: mm  
Applications  
4 V gate drive  
Low drainsource ON resistance  
High forward transfer admittance  
: R = 0.17 (typ.)  
DS (ON)  
: |Y | = 4.5 S (typ.)  
fs  
Low leakage current : I  
= 100 µA (max) (V = 100 V)  
DSS  
DS  
Enhancementmode : V = 0.8~2.0 V (V  
= 10 V, I = 1 mA)  
th  
DS  
D
Maximum Ratings (Ta = 25°C)  
Characteristics  
Drainsource voltage  
Symbol  
Rating  
Unit  
V
100  
100  
±20  
5
V
V
DSS  
Draingate voltage (R  
Gatesource voltage  
= 20 k)  
V
GS  
DGR  
V
V
GSS  
DC (Note 1)  
I
A
D
Drain current  
Pulse (Note 1)  
I
20  
A
DP  
Drain power dissipation (Tc = 25°C)  
Single pulse avalanche energy  
P
20  
W
D
AS  
AR  
JEDEC  
JEITA  
E
180  
mJ  
(Note 2)  
SC-64  
2-7B1B  
Avalanche current  
I
5
2
A
TOSHIBA  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 0.36 g (typ.)  
T
150  
ch  
Storage temperature range  
T
55~150  
stg  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
R
6.25  
125  
°C / W  
°C / W  
th (chc)  
th (cha)  
Thermal resistance, channel to  
ambient  
R
Note 1: Please use devices on condition that the channel temperature is  
below 150°C.  
Note 2: V  
DD  
= 25 V, T = 25°C (initial), L = 11.6 mH, R = 25 , I  
ch  
= 5 A  
AR  
G
Note 3: Repetitive rating: Pulse width limited by maximum channel  
temperature  
This transistor is an electrostatic sensitive device.  
Please handle with caution.  
JEDEC  
JEITA  
TOSHIBA  
2-7J1B  
Weight: 0.36 g (typ.)  
1
2002-07-22  
2SK2399  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Gate leakage current  
Drain cutoff current  
Drainsource breakdown  
voltage  
I
V
V
= ±16 V, V = 0 V  
±10  
100  
µA  
µA  
GSS  
GS  
DS  
DS  
I
= 100 V, V  
= 0 V  
DSS  
GS  
V
I
= 10 mA, V  
= 0 V  
GS  
100  
V
V
S
(BR) DSS  
D
Gate threshold voltage  
V
V
V
V
V
= 10 V, I = 1 mA  
0.8  
0.22  
0.17  
4.5  
2.0  
0.30  
0.23  
th  
DS  
GS  
GS  
DS  
D
= 4 V, I = 2.5 A  
D
Drainsource ON resistance  
R
DS (ON)  
= 10 V, I = 2.5 A  
D
Forward transfer admittance  
Input capacitance  
|Y |  
= 10 V, I = 2.5 A  
2.0  
fs  
D
C
C
500  
80  
iss  
V
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Reverse transfer capacitance  
Output capacitance  
DS  
rss  
C
190  
oss  
Rise time  
t
17  
25  
50  
r
Turnon time  
Switching time  
t
on  
ns  
Fall time  
t
f
Turnoff time  
t
195  
22  
off  
Total gate charge (Gatesource  
plus gatedrain)  
Q
g
V
80 V, V  
= 10 V, I = 5 A  
nC  
DD  
GS  
D
Gatesource charge  
Q
15  
7
gs  
Gatedrain (“miller”) charge  
Q
gd  
SourceDrain Ratings and Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
5
Unit  
A
Continuous drain reverse current  
(Note 1)  
I
DR  
Pulse drain reverse current  
(Note 1)  
I
20  
A
DRP  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
V
I
I
= 5 A, V  
= 5 A, V  
= 0 V  
1.7  
V
DSF  
DR  
DR  
GS  
GS  
t
160  
0.28  
ns  
µC  
rr  
= 0 V, dI / dt = 50 A / µs  
DR  
Q
rr  
Marking  
2
2002-07-22  
2SK2399  
3
2002-07-22  
2SK2399  
4
2002-07-22  
2SK2399  
1
B
R
V
= 25 Ω  
VDSS  
VDSS  
G
E
=
L I2  
AS  
= 25 V, L = 11.6 mH  
2
B
V  
DD  
DD  
5
2002-07-22  
2SK2399  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
The information contained herein is subject to change without notice.  
6
2002-07-22  
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