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2SK3559

型号:

2SK3559

品牌:

PANASONIC[ PANASONIC ]

页数:

16 页

PDF大小:

129 K

New  
Achieving the industry's lowest Ron Qg along with high switching speed through the use of  
micro-cell structure and a newly developed design.  
Low On-Resistance, High-Speed Switching MOSFET Series  
„ Product Outline  
2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 are low On-resistance, high-speed switching MOSFETs ideal  
for PDP sustain drivers, inverters and power supplies for various equipment. Offering the lowest Ron Qg of its  
kind and improved switching speed, these products enhance equipment efficiency. This results in savings in  
labor and total cost reduction.  
„ Features  
z Low On-resistance: 29m (minimum) (45% lower than conventional Panasonic product)  
z Low Ron Qg: 2.50nC (40% lower than conventional Panasonic product) -- industry's lowest  
z High-speed switching  
„ Applications  
z PDP sustain drivers, inverters and power supply for various equipment  
„ Specifications  
Product  
tr  
tf  
Package  
VDSS  
(V)  
ID  
Pc  
Ron (typ)  
Qg  
(nC)  
45  
(n s)  
(A)  
20  
30  
30  
50  
50  
(W)  
100  
100  
200  
100  
100  
(mohm)  
65  
(n s)  
40  
2SK3628  
2SK3559  
2SK3665  
2SK3637  
2SK3652  
45  
50  
TOP-3F  
TOP-3F  
TOP-3L  
TOP-3E  
TOP-3E  
230  
230  
200  
200  
230  
55  
55  
45  
50  
55  
45  
50  
125  
140  
140  
145  
29  
85  
29  
105  
The products and specification are subject to change without any notice. Please ask for the latest Product Standards to guarantee the satisfaction of your product requirements.  
1 Kotari-yakemachi, Nagaokakyo, Kyoto 617-8520, Japan  
E00128AE  
Tel. (075)951-8151  
http://www.panasonic.co.jp/semicon/  
New publication, effective from Jul.23 2002.  
Silicon MOSFET  
2SK3628  
N-channel enhancement mode MOSFET  
High speed switching  
Unit : mm  
5.0 0.2  
15.0 0.3  
11.0 0.2  
(3.2)  
φ 3.2 0.1  
Absolute Maximum Ratings  
Symbol  
VDSS  
VGSS  
ID  
Rating  
230  
±30  
20  
Parameter  
Unit  
V
2.0 0.1  
2.0 0.2  
Drain-Source breakdown voltage  
Gate-Source voltage  
1.1 0.1  
0.6 0.2  
V
5.45 0.3  
A
DC  
10.9 0.5  
2
Drain current  
A
IDP  
80  
Pulse  
1
3
Avalanche energy capability  
m J  
W
*1  
EAS  
PD  
570  
100  
TOP-3F-B1  
Allowable power Tc = 25 °C *2  
dissipation  
W
3
Ta = 25 °C *3  
PD  
°C  
Junction temperature  
Storage temperature  
150  
Tj  
-55 to +150  
°C  
Tstg  
*1 : Guarantee of single pulse avalanche energy.  
(L = 2.23mH, IL = 20A, VDD = 50V, 1pulse, Ta = 25 °C )  
*2 : Tc = 25 °C  
*3 : Ta = 25 °C (Without heat sink )  
Electrical Characteristics (Tc = 25 3 °C)  
Parameter  
Symbol  
IDSS  
Condition  
Min  
Typ  
Max  
Unit  
Drain Cutoff Current  
Gate-source Leakage Current  
Drain-source Breakdown Voltage  
Gate Threshold Voltage  
Drain-source on Resistance  
Forward Transfer Admittance  
Diode Forward Voltage  
Input Capacitance  
100  
1
VDS = 184V, VGS = 0  
VGS = 30 V, VDS = 0  
ID = 1 mA, VGS = 0  
µ A  
µ A  
IGSS  
VDSS  
Vth  
230  
1.7  
V
V
3.7  
65  
VDS = 25 V, ID = 1 mA  
RDS (on) VGS = 10 V, ID = 10 A  
m Ω  
S
85  
Yfs  
7
14  
VDS = 25 V, ID = 10 A  
VDSF  
Ciss  
Coss  
Crss  
td (on)  
tr  
IDR = 20 A, VGS = 0  
V
-1.5  
2300  
330  
30  
p F  
p F  
p F  
n s  
n s  
n s  
n s  
VDS = 25 V, VGS = 0,  
f = 1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on delay time  
35  
VDD = 100V, ID = 15 A  
26  
Rise time  
220  
36  
Turn-off delay time  
td (off)  
tf  
RL = 6.7 , VGS = 10 V  
Fall time  
2SK3628  
140  
120  
100  
80  
1000  
100  
10  
(1) Tc=Ta  
Non repetitive pulse  
(2) With a 100 × 100 × 2mm  
Tc=25˚C  
Al heat sink  
(3) Without heat sink  
IDP  
ID  
(1)  
t=100µs  
t=1ms  
60  
t=10ms  
t=1s  
40  
1
20  
(2)  
(3)  
0.1  
0
10  
100  
VDS (V)  
1000  
1
0
20 40 60 80 100 120 140 160  
Ta (˚C)  
Silicon MOSFET  
2SK3559  
N-channel enhancement mode MOSFET  
High speed switching  
Unit : mm  
5.0 0.2  
15.0 0.3  
11.0 0.2  
(3.2)  
φ 3.2 0.1  
Absolute Maximum Ratings  
Symbol  
VDSS  
VGSS  
ID  
Rating  
230  
Parameter  
Unit  
V
2.0 0.1  
2.0 0.2  
Drain-Source breakdown voltage  
Gate-Source voltage  
1.1 0.1  
0.6 0.2  
V
±30  
30  
5.45 0.3  
A
DC  
10.9 0.5  
Drain current  
A
IDP  
120  
1
2 3  
Pulse  
Tc = 25 °C *1  
Ta = 25 °C *2  
PD  
100  
W
W
Allowable power  
dissipation  
TOP-3F-B1  
PD  
3
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
-55 to +150  
Tstg  
*1 : Tc = 25 °C  
*2 : Ta = 25 °C (Without heat sink )  
Electrical Characteristics (Tc = 25 3 °C)  
Parameter  
Symbol  
IDSS  
Condition  
Min  
Typ  
Max  
Unit  
Drain Cutoff Current  
Gate-source Leakage Current  
Drain-source Breakdown Voltage  
Gate Threshold Voltage  
Drain-source on Resistance  
Forward Transfer Admittance  
Diode Forward Voltage  
Input Capacitance  
100  
1
VDS = 184V, VGS = 0  
VGS = 30 V, VDS = 0  
ID = 1 mA, VGS = 0  
µ A  
µ A  
IGSS  
VDSS  
Vth  
230  
2
V
V
4
55  
VDS = 25 V, ID = 1 mA  
RDS (on) VGS = 10 V, ID = 15 A  
m Ω  
S
74  
Yfs  
8
16  
VDS = 25 V, ID = 15 A  
VDSF  
Ciss  
Coss  
Crss  
td (on)  
tr  
IDR = 30 A, VGS = 0  
V
-1.5  
3170  
440  
35  
p F  
p F  
p F  
n s  
n s  
n s  
n s  
VDS = 25 V, VGS = 0,  
f = 1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on delay time  
36  
VDD = 100V, ID = 15 A  
25  
Rise time  
217  
35  
Turn-off delay time  
td (off)  
tf  
RL = 6.7 , VGS = 10 V  
Fall time  
2SK3559  
140  
120  
100  
80  
1000  
100  
10  
(1) Tc=Ta  
Non repetitive pulse  
(2) With a 100 × 100 × 2mm  
Tc=25˚C  
Al heat sink  
(3) Without heat sink  
IDP  
ID  
(1)  
t=100µs  
t=1ms  
60  
40  
t=10ms  
t=1s  
1
20  
(2)  
(3)  
0
0.1  
0
20 40 60 80 100 120 140 160  
100  
VDS (V)  
1000  
10  
1
Ta (˚C)  
Silicon MOSFET  
2SK3665  
N-channel enhancement mode MOSFET  
High speed switching  
Unit : mm  
20.0 0.5  
5.0 0.3  
(3.0)  
φ 3.3 0.2  
Absolute Maximum Ratings  
(1.5)  
Symbol  
VDSS  
VGSS  
ID  
Rating  
200  
Parameter  
Unit  
V
(1.5)  
2.0 0.3  
2.7 0.3  
3.0 0.3  
1.0 0.2  
Drain-Source breakdown voltage  
Gate-Source voltage  
0.6 0.2  
V
±30  
30  
5.45 0.3  
A
DC  
10.9 0.5  
Drain current  
A
IDP  
120  
Pulse  
1
2
3
m J  
W
W
°C  
Avalanche energy capability  
*1  
EAS  
PD  
1800  
180  
TOP-3L  
Allowable power Tc = 25 °C *2  
dissipation  
3
Ta = 25 °C *3  
PD  
D
S
Junction temperature  
Storage temperature  
150  
Tj  
-55 to +150  
°C  
Tstg  
*1 : Guarantee of single pulse avalanche energy.  
(L = 2mH, IL = 30A, VDD = 100V, 1pulse, Ta = 25 °C )  
G
*2 : Tc = 25 °C  
*3 : Ta = 25 °C (Without heat sink )  
Electrical Characteristics (Tc = 25 3 °C)  
Parameter  
Symbol  
IDSS  
Condition  
Min  
Typ  
Max  
Unit  
Drain Cutoff Current  
Gate-source Leakage Current  
Drain-source Breakdown Voltage  
Gate Threshold Voltage  
Drain-source on Resistance  
Forward Transfer Admittance  
Input Capacitance  
100  
1
VDS = 160V, VGS = 0  
VGS = 30 V, VDS = 0  
ID = 1 mA, VGS = 0  
µ A  
µ A  
IGSS  
VDSS  
Vth  
200  
1.5  
V
V
3.5  
50  
VDS = 10 V, ID = 1 mA  
RDS (on) VGS = 10 V, ID = 15 A  
m Ω  
S
68  
Yfs  
8
16  
VDS = 25 V, ID = 15 A  
Ciss  
3170  
440  
35  
p F  
p F  
p F  
n s  
n s  
n s  
n s  
VDS = 25 V, VGS = 0,  
Coss  
Output Capacitance  
f = 1MHz  
Crss  
Reverse Transfer Capacitance  
Turn-on delay time  
td (on)  
36  
VDD = 100V, ID = 15 A  
tr  
42  
Rise time  
230  
50  
Turn-off delay time  
td (off)  
tf  
RL = 6.7 , VGS = 10 V  
Fall time  
2SK3665  
Electrical Characteristics (Tc = 25 3 °C)  
Parameter  
Symbol  
VDSF  
Trr  
Condition  
Min  
Typ  
Max  
Unit  
Diode forward Voltage  
Reverse recovery Time  
Reverse recovery Charge  
Total Gate Charge  
-1.5  
V
IDR = 30V, VGS = 0  
182  
819  
n s  
L = 230 µH, VDD = 100V  
IDR = 15 A, di/dt = 100A/µs  
Qrr  
n C  
n C  
n C  
n C  
Qg  
55  
10  
16  
VDD = 100 V, ID = 25 A  
VGS = 10 V  
Gate-Source Charge  
Gate-Drain Charge  
Qgs  
Qgd  
Thermal characteristics  
Thermal resistance  
(channel to case)  
Rth (ch-c)  
Rth (ch-a)  
°C/W  
°C/W  
0.69  
41.6  
Thermal resistance  
(channel to ambient)  
2SK3665  
1000  
100  
10  
200  
150  
Non repetitive pulse  
(1) Tc=Ta  
(2) Without heat sink  
Tc=25˚C  
IDP  
ID  
(1)  
t=100µs  
1ms  
10ms  
DC  
100  
50  
0
1
(2)  
0.1  
10  
100  
1000  
1
25  
150  
0
50  
100 125  
75  
Drain- Source Voltage (V)  
Ta (˚C)  
100.0  
Without heat sink  
10.0  
1.0  
With heat sink  
0.1  
1
0.001  
0.01  
0.1  
100  
10  
1000  
t (sec)  
1.000  
0.100  
0.010  
0.001  
d=1  
d=0.5  
d=0.2  
d=0.1  
d=0.05  
d=0.02  
d=0.01  
t
T
Rth(ch-c)=0.69˚C/W  
d=t/T  
10  
1
0.001  
0.01  
0.1  
100  
1000  
tw (msec)  
2SK3665  
Derating curve for safety operation  
125  
100  
Apply this derating  
curve for current of safety  
operation range  
when Tc>25˚C.  
Is/b secondary  
breakdown line  
75  
50  
PC line  
25  
0
140 150  
20  
10  
50 60  
80  
110 120  
100 130  
0
30 40  
90  
70  
Case temperature (˚C)  
Silicon MOSFET  
2SK3637  
N-channel enhancement mode MOSFET  
High speed switching  
Unit : mm  
15.5 0.5  
3.0 0.3  
5˚  
φ 3.2 0.1  
5˚  
Absolute Maximum Ratings  
5˚  
5˚  
5˚  
(4.0)  
2.0 0.2  
Symbol  
VDSS  
VGSS  
ID  
Rating  
200  
Parameter  
Unit  
V
1.1 0.1  
0.7 0.1  
Drain-Source breakdown voltage  
Gate-Source voltage  
5.45 0.3  
V
±30  
50  
10.9 0.5  
A
DC  
5˚  
Drain current  
1
2
3
A
IDP  
200  
Pulse  
m J  
W
W
°C  
Avalanche energy capability  
*1  
EAS  
PD  
2000  
100  
TOP-3E  
Allowable power Tc = 25 °C *2  
dissipation  
3
Ta = 25 °C *3  
PD  
D
S
Junction temperature  
Storage temperature  
150  
Tj  
-55 to +150  
°C  
Tstg  
*1 : Guarantee of single pulse avalanche energy.  
(L = 0.8mH, IL = 50A, VDD = 100V, 1pulse, Ta = 25 °C )  
*2 : Tc = 25 °C  
*3 : Ta = 25 °C (Without heat sink )  
G
Electrical Characteristics (Tc = 25 3 °C)  
Parameter  
Symbol  
IDSS  
Condition  
Min  
Typ  
Max  
Unit  
Drain Cutoff Current  
Gate-source Leakage Current  
Drain-source Breakdown Voltage  
Gate Threshold Voltage  
Drain-source on Resistance  
Forward Transfer Admittance  
Input Capacitance  
100  
1
VDS = 160V, VGS = 0  
VGS = 30 V, VDS = 0  
ID = 1 mA, VGS = 0  
µ A  
µ A  
IGSS  
VDSS  
Vth  
200  
2
V
V
4
VDS = 25 V, ID = 10 mA  
RDS (on) VGS = 10 V, ID = 25 A  
29  
30  
m Ω  
S
40  
Yfs  
15  
VDS = 25 V, ID = 25 A  
Ciss  
4550  
750  
75  
p F  
p F  
p F  
n s  
n s  
n s  
n s  
VDS = 25 V, VGS = 0,  
Coss  
Output Capacitance  
f = 1MHz  
Crss  
Reverse Transfer Capacitance  
Turn-on delay time  
td (on)  
50  
VDD = 100V, ID = 25 A  
tr  
125  
390  
140  
Rise time  
Turn-off delay time  
td (off)  
tf  
RL = 4 , VGS = 10 V  
Fall time  
2SK3637  
Electrical Characteristics (Tc = 25 3 °C)  
Parameter  
Symbol  
VDSF  
Trr  
Condition  
Min  
Typ  
Max  
Unit  
Diode forward Voltage  
Reverse recovery Time  
Reverse recovery Charge  
Total Gate Charge  
-1.5  
V
IDR = 50V, VGS = 0  
210  
820  
n s  
L = 230 µH, VDD = 100V  
IDR = 25 A, di/dt = 100A/µs  
Qrr  
n C  
n C  
n C  
n C  
Qg  
85  
30  
12  
VDD = 100 V, ID = 25 A  
VGS = 10 V  
Gate-Source Charge  
Gate-Drain Charge  
Qgs  
Qgd  
Thermal characteristics  
Thermal resistance  
(channel to case)  
Rth (ch-c)  
Rth (ch-a)  
°C/W  
°C/W  
1.25  
41.6  
Thermal resistance  
(channel to ambient)  
2SK3637  
1000  
100  
10  
120  
110  
100  
90  
(1) Tc=Ta  
(2) Without heat sink  
Non repetitive pulse  
Tc=25˚C  
IDP  
ID  
t=100µs  
(1)  
80  
70  
60  
50  
40  
30  
20  
1ms  
DC  
10ms  
100ms  
1
10  
0
(2)  
0.1  
10  
100  
1000  
1
25  
100  
150  
0
50  
125  
75  
Drain- Source Voltage (V)  
Ta (˚C)  
Silicon MOSFET  
2SK3652  
N-channel enhancement mode MOSFET  
High speed switching  
Unit : mm  
15.5 0.5  
3.0 0.3  
φ 3.2 0.1  
5˚  
5˚  
Absolute Maximum Ratings  
5˚  
5˚  
5˚  
(4.0)  
2.0 0.2  
Symbol  
VDSS  
VGSS  
ID  
Rating  
230  
Parameter  
Unit  
V
1.1 0.1  
0.7 0.1  
Drain-Source breakdown voltage  
Gate-Source voltage  
5.45 0.3  
V
±30  
50  
10.9 0.5  
A
DC  
5˚  
Drain current  
1
2
3
A
IDP  
230  
Pulse  
m J  
W
W
°C  
Avalanche energy capability  
*1  
EAS  
PD  
2200  
100  
TOP-3E  
Allowable power Tc = 25 °C *2  
dissipation  
3
Ta = 25 °C *3  
PD  
D
S
Junction temperature  
Storage temperature  
150  
Tj  
-55 to +150  
°C  
Tstg  
*1 : Guarantee of single pulse avalanche energy.  
(L = 1mH, IL = 50A, VDD = 100V, 1pulse, Ta = 25 °C )  
*2 : Tc = 25 °C  
*3 : Ta = 25 °C (Without heat sink )  
G
Electrical Characteristics (Tc = 25 3 °C)  
Parameter  
Symbol  
IDSS  
Condition  
Min  
Typ  
Max  
Unit  
Drain Cutoff Current  
Gate-source Leakage Current  
Drain-source Breakdown Voltage  
Gate Threshold Voltage  
Drain-source on Resistance  
Forward Transfer Admittance  
Input Capacitance  
100  
1
VDS = 184V, VGS = 0  
VGS = 30 V, VDS = 0  
ID = 1 mA, VGS = 0  
µ A  
µ A  
IGSS  
VDSS  
Vth  
230  
2
V
V
4
VDS = 25 V, ID = 10 mA  
RDS (on) VGS = 10 V, ID = 25 A  
29  
35  
m Ω  
S
40  
Yfs  
17  
VDS = 25 V, ID = 25 A  
Ciss  
5950  
850  
80  
p F  
p F  
p F  
n s  
n s  
n s  
n s  
VDS = 25 V, VGS = 0,  
Coss  
Output Capacitance  
f = 1MHz  
Crss  
Reverse Transfer Capacitance  
Turn-on delay time  
td (on)  
65  
VDD = 100V, ID = 25 A  
tr  
140  
470  
145  
Rise time  
Turn-off delay time  
td (off)  
tf  
RL = 4 , VGS = 10 V  
Fall time  
2SK3652  
Electrical Characteristics (Tc = 25 3 °C)  
Parameter  
Symbol  
VDSF  
Trr  
Condition  
Min  
Typ  
Max  
Unit  
Diode forward Voltage  
Reverse recovery Time  
Reverse recovery Charge  
Total Gate Charge  
-1.5  
V
IDR = 50V, VGS = 0  
235  
n s  
L = 230 µH, VDD = 100V  
IDR = 25 A, di/dt = 100A/µs  
Qrr  
1180  
n C  
n C  
n C  
n C  
Qg  
105  
40  
VDD = 100 V, ID = 25 A  
VGS = 10 V  
Gate-Source Charge  
Gate-Drain Charge  
Qgs  
Qgd  
14  
Thermal characteristics  
Thermal resistance  
(channel to case)  
Rth (ch-c)  
Rth (ch-a)  
°C/W  
°C/W  
1.25  
41.6  
Thermal resistance  
(channel to ambient)  
2SK3652  
1000  
100  
10  
120  
110  
100  
90  
(1) Tc=Ta  
(2) Without heat sink  
Non repetitive pulse  
Tc=25˚C  
IDP  
ID  
t=100µs  
(1)  
80  
70  
60  
50  
40  
30  
20  
1ms  
DC  
10ms  
100ms  
1
10  
0
(2)  
0.1  
25  
100  
150  
0
50  
125  
75  
10  
100  
1000  
1
Ta (˚C)  
Drain- Source Voltage (V)  
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-  
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2001 MAR  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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