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2SK4145-S19-AY

型号：

2SK4145-S19-AY

品牌：

NEC[ NEC ]

页数：

8 页

PDF大小：

193 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK4145  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications.  
FEATURES  
• Low on-state resistance  
RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A)  
• Low input capacitance  
Ciss = 5300 pF TYP.  
ORDERING INFORMATION  
PART NUMBER  
LEAD PLATING  
Pure Sn (Tin)  
PACKING  
PACKAGE  
2SK4145-S19-AY Note  
Tube 50 p/tube  
TO-220 typ. 1.9 g  
Note Pb-free (This product does not contain Pb in the external electrode).  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
60  
V
V
20  
84  
A
215  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
84  
W
W
°C  
°C  
A
PT2  
1.5  
Tch  
150  
Storage Temperature  
Tstg  
−55 to +150  
32  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
102  
mJ  
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%  
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH  
THERMAL RESISTANCE  
Channel to Case Thermal Resistance  
Channel to Ambient Thermal Resistance  
Rth(ch-C)  
Rth(ch-A)  
1.49  
83.3  
°C/W  
°C/W  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D18760EJ2V0DS00 (2nd edition)  
Date Published June 2007 NS  
Printed in Japan  
2007  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  
2SK4145  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
Gate to Source Cut-off Voltage  
Forward Transfer Admittance Note  
Drain to Source On-state Resistance Note  
Input Capacitance  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
10  
UNIT  
μA  
nA  
V
IDSS  
VDS = 60 V, VGS = 0 V  
IGSS  
VGS(off)  
| yfs |  
RDS(on)  
Ciss  
VGS = 20 V, VDS = 0 V  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 30 A  
VGS = 10 V, ID = 42 A  
VDS = 10 V,  
100  
4.0  
2.0  
16  
3.0  
31  
S
7
10  
mΩ  
pF  
pF  
pF  
ns  
5300  
540  
330  
25  
Output Capacitance  
Coss  
Crss  
VGS = 0 V,  
Reverse Transfer Capacitance  
Turn-on Delay Time  
f = 1 MHz  
td(on)  
tr  
VDD = 30 V, ID = 42 A,  
VGS = 10 V,  
Rise Time  
17  
ns  
Turn-off Delay Time  
td(off)  
tf  
RG = 0 Ω  
66  
ns  
Fall Time  
9
ns  
Total Gate Charge  
QG  
VDD = 48 V,  
90  
nC  
nC  
nC  
V
Gate to Source Charge  
QGS  
QGD  
VF(S-D)  
trr  
VGS = 10 V,  
21  
Gate to Drain Charge  
ID = 84 A  
30  
Body Diode Forward Voltage Note  
Reverse Recovery Time  
Reverse Recovery Charge  
Note Pulsed  
IF = 84 A, VGS = 0 V  
IF = 84 A, VGS = 0 V,  
di/dt = 100 A/μs  
1.0  
43  
1.5  
ns  
Qrr  
62  
nC  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
L
D.U.T.  
V
V
GS  
RG  
= 25 Ω  
50 Ω  
R
L
90%  
V
GS  
Wave Form  
VGS  
10%  
90%  
0
R
G
PG.  
VDD  
PG.  
GS = 20 → 0 V  
VDD  
V
DS  
90%  
V
DS  
V
0
GS  
BVDSS  
10% 10%  
V
DS  
Wave Form  
0
I
AS  
V
DS  
I
D
τ
t
d(on)  
t
r
t
d(off)  
tf  
V
DD  
t
on  
toff  
τ = 1  
μs  
Duty Cycle ≤ 1%  
Starting Tch  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
= 2 mA  
I
G
RL  
50 Ω  
PG.  
VDD  
2
Data Sheet D18760EJ2V0DS  
2SK4145  
TYPICAL CHARACTERISTICS (TA = 25°C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
120  
100  
80  
60  
40  
20  
0
100  
80  
60  
40  
20  
0
0
25  
50  
75 100 125 150 175  
0
25  
50  
75 100 125 150 175  
TC - Case Temperature - °C  
TC - Case Temperature - °C  
FORWARD BIAS SAFE OPERATING AREA  
<R>  
1000  
100  
10  
I
D(pulse)  
I
D(DC)  
1
T
C
= 25°C  
Single Pulse  
0.1  
0.1  
1
10  
100  
VDS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
<R>  
1000  
R
R
th(ch-A) = 83.3°C/Wi  
100  
10  
1
th(ch-C) = 1.49°C/Wi  
Single Pulse  
0.1  
100 μ  
1 m  
10 m  
100 m  
1
10  
100  
1000  
PW - Pulse Width - s  
3
Data Sheet D18760EJ2V0DS  
2SK4145  
DRAIN CURRENT vs.  
FORWARD TRANSFER CHARACTERISTICS  
DRAIN TO SOURCE VOLTAGE  
250  
200  
150  
100  
50  
1000  
100  
10  
T
A
= −55°C  
25°C  
75°C  
150°C  
1
0.1  
0.01  
V
GS = 10 V  
VDS = 10 V  
Pulsed  
Pulsed  
0
0
0.5  
1
1.5  
2
2.5  
3
0
1
2
3
4
5
6
VDS - Drain to Source Voltage - V  
VGS - Gate to Source Voltage - V  
GATE TO SOURCE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
4
3.5  
3
100  
10  
1
T
A
= −55°C  
25°C  
75°C  
150°C  
2.5  
2
1.5  
1
V
DS = 10 V  
= 1 mA  
V
DS = 10 V  
0.5  
0
I
D
Pulsed  
-75  
-25  
25  
75  
125  
175  
0.1  
1
10  
100  
Tch - Channel Temperature - °C  
ID - Drain Current - A  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
20  
20  
Pulsed  
V
GS = 10 V  
Pulsed  
16  
12  
8
16  
I
D
= 16.8 A  
42 A  
12  
8
84 A  
4
4
0
0
0.1  
1
10  
100  
1000  
0
5
10  
15  
20  
ID - Drain Current - A  
VGS - Gate to Source Voltage - V  
4
Data Sheet D18760EJ2V0DS  
2SK4145  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE  
20  
10000  
1000  
100  
V
GS = 10 V  
= 42 A  
C
iss  
I
D
16  
12  
8
C
oss  
rss  
4
V
GS = 0 V  
C
f = 1 MHz  
Pulsed  
125 175  
0
0.1  
1
10  
100  
-75  
-25  
25  
75  
VDS - Drain to Source Voltage - V  
Tch - Channel Temperature - °C  
SWITCHING CHARACTERISTICS  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
60  
1000  
100  
10  
12  
10  
8
V
DD = 48 V  
50  
40  
30  
20  
10  
0
30 V  
12 V  
t
t
d(off)  
t
d(on)  
6
V
GS  
t
r
4
f
V
V
DD = 30 V  
GS = 10 V  
V
DS  
2
I = 84 A  
D
R = 0 Ω  
G
1
0
0.1  
1
10  
100  
0
10 20 30 40 50 60 70 80 90  
QG - Gate Charge - nC  
ID - Drain Current - A  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
REVERSE RECOVERY TIME vs.  
DIODE FORWARD CURRENT  
1000  
100  
10  
1000  
100  
10  
V
GS = 10 V  
0 V  
1
di/dt = 100 A/μs  
VGS = 0 V  
Pulsed  
1.5  
0.1  
1
0
0.5  
1
0.1  
1
10  
100  
VF(S-D) - Source to Drain Voltage - V  
IF - Diode Forward Current - A  
5
Data Sheet D18760EJ2V0DS  
2SK4145  
PACKAGE DRAWING (Unit: mm)  
TO-220  
4.8 MAX.  
1.3±0.2  
10.2 MAX.  
3.6±0.2  
8.7 TYP.  
4
1 2 3  
1.52±0.2  
0.8±0.1  
0.5±0.2  
2.4±0.2  
2.54 TYP.  
2.54 TYP.  
1.Gate  
2.Drain  
3.Source  
4.Fin (Drain)  
EQUIVALENT CIRCUIT  
Drain  
Body  
Diode  
Gate  
Source  
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately  
degrade the device operation. Steps must be taken to stop generation of static electricity as much as  
possible, and quickly dissipate it once, when it has occurred.  
6
Data Sheet D18760EJ2V0DS  
2SK4145  
MARKING INFORMATION  
NEC  
Pb-free plating marking  
K4145  
Abbreviation of part number  
Lot code  
RECOMMENDED SOLDERING CONDITIONS  
The 2SK4145 should be soldered and mounted under the following recommended conditions.  
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics  
sales representative.  
For technical information, see the following website.  
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)  
Recommended  
Soldering Method  
Wave soldering  
Soldering Conditions  
Condition Symbol  
THDWS  
Maximum temperature (Solder temperature): 260°C or below  
Time: 10 seconds or less  
Maximum chlorine content of rosin flux: 0.2% (wt.) or less  
Maximum temperature (Pin temperature): 350°C or below  
Time (per side of the device): 3 seconds or less  
Maximum chlorine content of rosin flux: 0.2% (wt.) or less  
Partial heating  
P350  
Caution Do not use different soldering methods together (except for partial heating).  
7
Data Sheet D18760EJ2V0DS  
2SK4145  
•
The information in this document is current as of June, 2007. The information is subject to change  
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or  
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all  
products and/or types are available in every country. Please check with an NEC Electronics sales  
representative for availability and additional information.  
• No part of this document may be copied or reproduced in any form or by any means without the prior  
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may  
appear in this document.  
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from the use of NEC Electronics products listed in this document  
or any other liability arising from the use of such products. No license, express, implied or otherwise, is  
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of a customer's equipment shall be done under the full  
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by  
customers or third parties arising from the use of these circuits, software and information.  
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,  
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To  
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC  
Electronics products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment and anti-failure features.  
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and  
"Specific".  
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-  
designated "quality assurance program" for a specific application. The recommended applications of an NEC  
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of  
each NEC Electronics product before using it in a particular application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots.  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support).  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC  
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications  
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to  
determine NEC Electronics' willingness to support a given application.  
(Note)  
(1)  
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its  
majority-owned subsidiaries.  
(2)  
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as  
defined above).  
M8E 02. 11-1  
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