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2SK4161D

型号：

2SK4161D

品牌：

SANKEN[ SANKEN ELECTRIC ]

页数：

7 页

PDF大小：

370 K

下载PDF手册
http://www.sanken-ele.co.jp  
SANKEN ELECTRIC  
２ＳＫ４１６１Ｄ  
Mar. 2014  
Features  
Package  
・Low on-resistance  
・Built-in gate protection diode  
TO-3P  
Applications  
・Electric power steering  
・High current switching  
Key Specifications  
・V(BR)DSS = 60V (ID=100μA)  
・RDS(ON) = 4.8mΩ max. (VGS=10V, ID=35A)  
・RDS(ON) = 6.0mΩ max. (VGS=8V, ID=35A)  
Internal Equivalent Circuit  
2
1
3
Absolute maximum ratings  
(Ta=25°C)  
Unit  
Characteristic  
Symbol  
Rating  
V
V
Drain to Source Voltage  
Gate to Source Voltage  
Continuous Drain Current  
Pulsed Drain Current  
VDSS  
60  
±20  
±100  
VGSS  
ID  
A
※
1
ID(pulse)  
PD  
±200  
A
Maximum Power Dissipation  
Single Pulse Avalanche Energy  
Channel Temperature  
132 (Tc=25°C)  
400  
W
mJ  
°C  
°C  
※
2
EAS  
Tch  
175  
Storage Temperature  
Tstg  
-55 to +175  
※1 PW≦100μsec. duty cycle≦1%  
※2 VDD=20V, L=1mH, IL=20A, unclamped, See Fig.1  
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no  
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.  
Copy Right: SANKEN ELECTRIC CO.,LTD.  
Page 1  
http://www.sanken-ele.co.jp  
SANKEN ELECTRIC  
２ＳＫ４１６１Ｄ  
Mar. 2014  
Electrical characteristics  
(Ta=25°C)  
Unit  
Limits  
TYP  
Characteristic  
Symbol  
Test Conditions  
MIN  
60  
MAX  
Drain to Source breakdown Voltage  
Gate to Source Leakage Current  
Drain to Source Leakage Current  
Gate Threshold Voltage  
V(BR)DSS  
IGSS  
ID=100μA,VGS=0V  
VGS=±15V  
V
μA  
μA  
V
±10  
100  
3.95  
IDSS  
VDS=60V, VGS=0V  
VDS=10V, ID=1mA  
VDS=10V, ID=35A  
ID=35A, VGS=10V  
ID=35A, VGS=8V  
VTH  
3.25  
30  
3.6  
80  
Forward Transconductance  
Static Drain to Source On-Resistance  
Static Drain to Source On-Resistance  
Input Capacitance  
Re(yfs)  
RDS(ON)  
RDS(ON)  
Ciss  
S
3.8  
4.8  
6.0  
mΩ  
mΩ  
4.2  
(8250)  
(800)  
(585)  
(120)  
(290)  
(240)  
(100)  
10000  
1000  
730  
160  
490  
400  
200  
0.9  
(11250)  
(1200)  
(875)  
(200)  
(690)  
(500)  
(300)  
1.2  
VDS=10V  
VGS=0V  
f=1MHz  
Output Capacitance  
Coss  
pF  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Crss  
td(on)  
tr  
ID=40A  
V
DD≒20V  
Rise Time  
RG=30Ω  
RL=0.5Ω  
VGS=10V  
See Fig.2  
ns  
Turn-Off Delay Time  
td(off)  
tf  
Fall Time  
ISD=50A,  
VGS=0V  
Source-Drain Diode Forward Voltage  
Source-Drain Diode Reverse Recovery Time  
Thermal Resistance Junction to Case  
Thermal Resistance Junction to Ambient  
VSD  
V
ISD=25A,  
di/dt=50A/µs  
trr  
80  
ns  
Rth(ch-c)  
Rth(ch-a)  
1.13  
°C/W  
°C/W  
35.71  
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no  
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.  
Copy Right: SANKEN ELECTRIC CO.,LTD.  
Page 2  
http://www.sanken-ele.co.jp  
SANKEN ELECTRIC  
２ＳＫ４１６１Ｄ  
Mar. 2014  
Characteristic Curves  
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no  
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.  
Copy Right: SANKEN ELECTRIC CO.,LTD.  
Page 3  
http://www.sanken-ele.co.jp  
SANKEN ELECTRIC  
２ＳＫ４１６１Ｄ  
Mar. 2014  
Characteristic Curves  
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no  
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.  
Copy Right: SANKEN ELECTRIC CO.,LTD.  
Page 4  
http://www.sanken-ele.co.jp  
SANKEN ELECTRIC  
２ＳＫ４１６１Ｄ  
Mar. 2014  
Characteristic Curves  
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no  
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.  
Copy Right: SANKEN ELECTRIC CO.,LTD.  
Page 5  
http://www.sanken-ele.co.jp  
SANKEN ELECTRIC  
２ＳＫ４１６１Ｄ  
Mar. 2014  
Fig.1  
Unclamped Inductive Test Method  
1
V(BR)DSS  
EAS= ･L･ILP2・  
2
V(BR)DSS VDD  
(ａ) Test Circuit  
(b) Waveforms  
Fig.2 Switching Time Test Method  
90%  
RL  
VGS  
10%  
90%  
ID  
VDS  
R
G
VDS  
VDD  
VGS  
0V  
RGS  
10%  
td(on)  
tr  
td(off)  
tf  
P.W.=10μs  
ton  
toff  
Duty cycle≦1%  
(ａ) Test Circuit  
(b) Waveforms  
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no  
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.  
Copy Right: SANKEN ELECTRIC CO.,LTD.  
Page 6  
http://www.sanken-ele.co.jp  
SANKEN ELECTRIC  
２ＳＫ４１６１Ｄ  
Mar. 2014  
Outline  
TO3P  
(1) Gate  
(2) Drain (Back Side)  
(3) Source  
Weight Approx. 6g  
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no  
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.  
Copy Right: SANKEN ELECTRIC CO.,LTD.  
Page 7  
厂商 型号 描述 页数 下载

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ETC

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ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

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PANASONIC

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PANASONIC

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ETC

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PANASONIC

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PANASONIC

 		2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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