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2SK2201(2-7B1B)

型号:

2SK2201(2-7B1B)

品牌:

TOSHIBA[ TOSHIBA ]

页数:

6 页

PDF大小:

444 K

2SK2201  
2
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)  
2SK2201  
Chopper Regulator, DCDC Converter and Motor Drive  
Applications  
Unit: mm  
4-V gate drive  
Low drainsource ON resistance  
High forward transfer admittance  
: R = 0.28 (typ.)  
DS (ON)  
: |Y | = 3.5 S (typ.)  
fs  
Low leakage current : I  
= 100 µA (max) (V  
= 100 V)  
DS  
DSS  
Enhancement mode : V = 0.8~2.0 V (V  
= 10 V, I = 1 mA)  
D
th DS  
Maximum Ratings  
(Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drainsource voltage  
V
100  
100  
±20  
3
V
V
DSS  
Draingate voltage (R  
= 20 k)  
V
DGR  
GS  
Gatesource voltage  
V
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
A
D
Drain current  
I
12  
A
DP  
Drain power dissipation (Tc = 25°C)  
Single pulse avalanche energy  
P
20  
W
D
AS  
AR  
JEDEC  
JEITA  
E
140  
mJ  
(Note 2)  
SC-64  
2-7B1B  
Avalanche current  
I
3
2
A
TOSHIBA  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 0.36 g (typ.)  
T
ch  
150  
Storage temperature range  
T
stg  
55~150  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
R
6.25  
125  
°C / W  
°C / W  
th (chc)  
th (cha)  
Thermal resistance, channel to  
ambient  
R
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: V = 50 V, T = 25°C (initial), L = 25 mH, R = 25 , I = 3 A  
DD ch  
G
AR  
Note 3: Repetitive rating: pulse width limited by maximum channel  
temperature  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
JEDEC  
JEITA  
SC-64  
TOSHIBA  
2-7J1B  
Weight: 0.36 g (typ.)  
1
2004-07-06  
2SK2201  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Gate leakage current  
I
V
V
= ±16 V, V = 0 V  
±10  
100  
µA  
µA  
GSS  
GS  
DS  
Drain cutoff current  
I
= 100 V, V  
= 0 V  
DSS  
DS  
GS  
Drainsource breakdown  
voltage  
V
I
= 10 mA, V  
= 0 V  
100  
V
V
(BR) DSS  
D
GS  
Gate threshold voltage  
V
V
V
V
V
= 10 V, I = 1 mA  
0.8  
0.36  
0.28  
3.5  
2.0  
0.45  
0.35  
th  
DS  
GS  
GS  
DS  
D
= 4 V, I = 2 A  
D
Drainsource ON resistance  
R
DS (ON)  
= 10 V, I = 2 A  
D
Forward transfer admittance  
Input capacitance  
|Y |  
fs  
= 10 V, I = 2 A  
1.5  
S
D
C
C
280  
50  
iss  
V
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Reverse transfer capacitance  
Output capacitance  
DS  
rss  
C
oss  
105  
Rise time  
t
20  
50  
40  
r
Turnon time  
Switching time  
t
on  
ns  
Fall time  
t
f
Turnoff time  
t
170  
off  
Total gate charge (Gatesource  
plus gatedrain)  
Q
13.5  
g
V
DD  
80 V, V  
= 10 V, I = 3 A  
nC  
GS  
D
Gatesource charge  
Q
8.5  
5
gs  
Gatedrain (“miller”) charge  
Q
gd  
SourceDrain Ratings and Characteristics  
(Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
3
Unit  
A
Continuous drain reverse current  
(Note 1)  
I
DR  
Pulse drain reverse current  
(Note 1)  
I
12  
A
DRP  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
V
I
I
= 3 A, V  
= 3 A, V  
= 0 V  
100  
0.2  
1.5  
V
DSF  
DR  
DR  
GS  
t
ns  
µC  
rr  
= 0 V, dI / dt = 50 A / µs  
GS  
DR  
Q
rr  
Marking  
K2201  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
2
2004-07-06  
2SK2201  
3
2004-07-06  
2SK2201  
4
2004-07-06  
2SK2201  
R
V
= 25 ꢀ  
1
2
B
G
VDSS  
2
E
=
LI ⋅  
AS  
= 25 V, L = 25 mH  
DD  
B
V  
DD  
VDSS  
5
2004-07-06  
2SK2201  
RESTRICTIONS ON PRODUCT USE  
030619EAA  
The information contained herein is subject to change without notice.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
6
2004-07-06  
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ETC

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2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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