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2SK3886-01MR

型号:

2SK3886-01MR

品牌:

FUJI[ FUJI ELECTRIC ]

页数:

18 页

PDF大小:

410 K

SPECIFICATION  
Power MOSFET  
2SK3886-01MR  
Device Name  
Type Name  
Spec. No.  
Date  
:
:
:
:
MS5F5814  
Jun-28-2004  
NAME  
APPROVED  
DATE  
DRAWN  
CHECKED  
CHECKED  
Jun-28-'04  
Jun-28-'04  
Jun-28-'04  
1 / 18  
MS5F5814  
H04-004-05  
Revised Records  
Date  
Classification  
enactment  
Index  
Content  
Drawn Checked Checked  
Approved  
Jun-28  
2004  
Revised RDS(on)-tch  
graph.  
Aug.-29  
2006  
Revision  
a
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2 / 18  
H04-004-03  
1.Scope  
This specifies Fuji Power MOSFET 2SK3886-01MR  
N-Channel enhancement mode power MOSFET  
for Switching  
2.Construction  
3.Applications  
4.Outview  
TO-220F Outview See to 8/18 page  
5.Absolute Maximum Ratings at Tc=25 C (unless otherwise specified)  
Description  
Symbol  
VDS  
VDSX  
ID  
Characteristics  
Unit  
V
Remarks  
120  
90  
Drain-Source Voltage  
V
VGS=-30V  
67  
Continuous Drain Current  
Pulsed Drain Current  
Gate-Source Voltage  
A
IDP  
± 268  
± 30  
A
VGS  
V
Repetitive and Non-repetitive  
Maximum Avalanche Current  
Non-Repetitive  
Maximum Avalanche Energy  
Repetitive  
IAR  
Note *1  
Note *2  
Note *3  
67  
719.1  
9.5  
A
EAS  
EAR  
mJ  
mJ  
Maximum Avalanche Energy  
dVDS/dt  
dV/dt  
20  
5
Maximum Drain-Source dV/dt  
Peak Diode Recovery dV/dt  
VDS120V  
kV/s  
kV/s  
Note *4  
95  
Tc=25°C  
Ta=25°C  
PD  
Maximum Power Dissipation  
W
2.16  
Tch  
Operating and Storage  
Temperature range  
150  
C
Tstg  
-55 to +150  
C  
t=60sec  
f=60Hz  
VISO  
2
Isolation Voltage  
kVrms  
6.Electrical Characteristics at Tc=25 C (unless otherwise specified)  
Static Ratings  
Description  
Drain-Source  
Symbol  
Conditions  
min.  
120  
typ.  
-
max.  
-
Unit  
ID=250 A  
BVDSS  
VGS=0V  
Breakdown Voltage  
Gate Threshold  
Voltage  
V
V
ID=250 A  
VGS(th)  
VDS=VGS  
VDS=120V  
VGS=0V  
3.0  
-
-
-
5.0  
25  
Tch=25 C  
Zero Gate Voltage  
Drain Current  
A  
VDS=96V  
VGS=0V  
IDSS  
Tch=125 C  
-
-
250  
VGS= ± 30V  
VDS=0V  
Gate-Source  
IGSS  
Leakage Current  
Drain-Source  
-
-
-
100  
nA  
ID=33.5A  
RDS(on) VGS=10V  
On-State Resistance  
24.6  
30.0  
m
a
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H04-004-03  
Dynamic Ratings  
Description  
Symbol  
Conditions  
ID=33.5A  
min.  
typ.  
max.  
Unit  
S
Forward  
g
VDS=25V  
VDS=75V  
VGS=0V  
f=1MHz  
Transconductance  
Input Capacitance  
Output Capacitance  
Reverse Transfer  
14  
-
28  
1880  
360  
30  
-
fs  
Ciss  
2820  
540  
45  
Coss  
-
pF  
Capacitance Crss  
td(on)  
-
-
-
-
-
-
-
-
Vcc=48V  
VGS=10V  
ID=33.5A  
RGS=10  
Vcc=60V  
ID=67A  
20  
35  
50  
23  
52  
16  
18  
30  
53  
75  
35  
78  
24  
27  
Turn-On Time  
tr  
td(off)  
tf  
ns  
Turn-Off Time  
QG  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
QGS  
QGD  
nC  
VGS=10V  
Reverse Diode  
Description  
Symbol  
Conditions  
min.  
typ.  
1.10  
150  
0.9  
max.  
Unit  
V
IF=67A  
VGS=0V  
IF=67A  
VGS=0V  
Diode Forward  
On-Voltage  
V
Tch=25C  
-
-
-
1.50  
SD  
Reverse Recovery  
Time trr  
Reverse Recovery  
Charge Qrr  
-
-
ns  
-di/dt=100A/s  
Tch=25C  
C  
7.Thermal Resistance  
Description  
Symbol  
min.  
typ.  
max.  
1.316  
58  
Unit  
C/W  
C/W  
Channel to Case  
Channel to Ambient  
Rth(ch-c)  
Rth(ch-a)  
Note *1 : Tch150C, See Fig.1 and Fig.2  
Note *2 : Starting Tch=25C,IAS=27A,L=1.32mH,Vcc=48V,RG=50,See Fig.1 and Fig.2  
EAS limited by maximum channel temperature and avalanche current.  
See to the 'Avalanche Energy' graph of page 17/18.  
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.  
See to the 'Maximum Transient Thermal impedance' graph of page 18/18.  
Note *4 : IF-ID,-di/dt=50A/s,VccBVDSS,Tch150C  
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Fig.1 Test circuit  
L
50Ω  
D.U.T  
Vcc  
Fig.2 Operating waveforms  
+10V  
VGS  
-15V  
BVDSS  
IDP  
VDS  
ID  
0
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H04-004-03  
8.Reliability test items  
All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs).  
Each categories under the guaranteed reliability conform to EIAJ ED4701/100 method104  
standards.  
Test items required without fail  
Humidification treatment (85±2°C,65±5%RH,168±24hr)  
Heat treatment of soldering (Solder Dipping,260±5°C(265°Cmax.),10±1sec,2 times)  
Test Test  
Testing methods and Conditions  
Reference  
Standard  
Sampling Acceptance  
number number  
No.  
Items  
1 Terminal  
Strength  
(Tensile)  
Pull force  
TO-220,TO-220F : 10N  
TO-3P,TO-3PF,TO-247 : 25N  
TO-3PL : 45N  
EIAJ  
ED4701/400  
method 401  
15  
15  
T-Pack,K-Pack : 10N  
Force maintaining duration :30±5sec  
Load force  
TO-220,TO-220F : 5N  
TO-3P,TO-3PF,TO-247 : 10N  
TO-3PL : 15N  
2 Terminal  
Strength  
(Bending)  
EIAJ  
ED4701/400  
method 401  
T-Pack,K-Pack : 5N  
Number of times :2times(90deg./time)  
Screwing torque value: (M3)  
TO-220,TO-220F : 40±10Ncm  
TO-3P,TO-3PF,TO-247 : 50±10Ncm  
TO-3PL : 70±10Ncm  
frequency : 100Hz to 2kHz  
Acceleration : 200m/s2  
Sweeping time : 4min.  
48min. for each X,Y&Z directions.  
Peak amplitude: 15km/s2  
Duration time : 0.5ms  
3times for each X,Y&Z directions.  
Solder temp. : 235 5 C  
   
(0:1)  
3 Mounting  
Strength  
EIAJ  
ED4701/400  
method 402  
15  
15  
15  
15  
15  
4 Vibration  
EIAJ  
ED4701/400  
method 403  
5 Shock  
EIAJ  
ED4701/400  
method 404  
6 Solderability  
Immersion time : 5 0.5sec  
EIAJ  
ED4701/300  
Each terminal shall be immersed in  
the solder bath within 1 to 1.5mm from method 303  
the body.  
Solder temp. : 260 5 C  
   
7 Resistance to  
Soldering Heat  
EIAJ  
ED4701/300  
method 302  
Immersion time : 10 1sec  
Number of times : 1times  
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H04-004-03  
Test Test  
Testing methods and Conditions  
Reference  
Standard  
Sampling Acceptance  
number number  
No.  
Items  
1 High Temp.  
Storage  
Temperature : 150+0/-5°C  
Test duration : 1000hr  
EIAJ  
22  
22  
ED4701/200  
method 201  
EIAJ  
2 Low Temp.  
Storage  
Temperature : -55+5/-0°C  
Test duration : 1000hr  
ED4701/200  
method 202  
EIAJ  
3 Temperature  
Humidity  
Temperature : 85±2°C  
Relative humidity : 85±5%  
Test duration : 1000hr  
ED4701/100  
method 103  
EIAJ  
22  
22  
Storage  
4 Temperature  
Humidity  
Temperature : 85±2°C  
Relative humidity : 85±5%  
Bias Voltage : VDS(max) * 0.8  
ED4701/100  
method 103  
BIAS  
Test duration : 1000hr  
5 Unsaturated  
Pressurized  
Vapor  
Temperature : 130±2°C  
Relative humidity : 85±5%  
Vapor pressure : 230kPa  
Test duration : 48hr  
EIAJ  
(0:1)  
ED4701/100  
method 103  
22  
22  
22  
6 Temperature  
Cycle  
EIAJ  
High temp.side : 1505C/30min.  
   
Low temp.side : -55 5 C/30min.  
ED4701/100  
method 105  
RT : 5°C 35°C/5min.  
Number of cycles : 100cycles  
7 Thermal Shock Fluid : pure water(running water)  
EIAJ  
High temp.side : 100+0/-5 C  
ED4701/300  
method 307  
Low temp.side : 0+5/-0C  
Duration time : HT 5min,LT 5min  
Number of cycles : 100cycles  
8 Intermittent  
Operating  
Life  
EIAJ  
Tc=90degree  
ED4701/100  
method 106  
EIAJ  
22  
22  
TchTch(max.)  
Test duration : 3000 cycle  
Temperature : Tch=150+0/-5°C  
Bias Voltage : +VGS(max)  
Test duration : 1000hr  
9 HTRB  
(Gate-source)  
ED4701/100  
(0:1)  
method 101  
EIAJ  
10 HTRB  
Temperature : Tch=150+0/-5°C  
(Drain-Source) Bias Voltage : VDS(max)*1.0  
Test duration : 1000hr  
ED4701/100  
22  
method 101  
Failure Criteria  
Symbols  
Failure Criteria  
Unit  
Item  
Breakdown Voltage  
Lower Limit  
LSL * 1.0  
-----  
Upper Limit  
-----  
BVDSS  
IDSS  
V
A
A
V
S
V
Zero gate Voltage Drain-Source Current  
Gate-Source Leakage Current  
Gate Threshold Voltage  
Drain-Source on-state Resistance  
Forward Transconductance  
Diode forward on-Voltage  
Marking  
USL * 2  
USL * 2  
USL * 1.2  
USL * 1.2  
-----  
IGSS  
-----  
VGS(th)  
RDS(on)  
gfs  
LSL * 0.8  
-----  
LSL * 0.8  
-----  
VSD  
USL * 1.2  
Soldering  
-----  
With eyes or Microscope  
-----  
and other damages  
* LSL : Lower Specification Limit  
* USL : Upper Specification Limit  
* Before any of electrical characteristics measure, all testing related to the humidity  
have conducted after drying the package surface for more than an hour at 150°C.  
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9. Cautions  
Although Fuji Electric is continually improving product quality and reliability, a smallpercentage of semicon-  
ductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you  
are requested to take adequate safety measures to prevent the equipment from causing physical injury, fire,  
or other problem in case any of the products fail. It is recommended to make your design fail-safe, flame  
retardant, and free of malfunction.  
The products described in this Specification are intended for use inthe following electronic and electrical  
equipment which has normal reliability requirements.  
Computers  
OA equipment  
AV equipment  
Communications equipment(Terminal devices)  
Measurement equipment  
Machine tools  
Personal equipment Industrial robots  
Electrical home appliances etc.  
The products described in this Specification are not designed or manufactured to be used in equipment or  
systems used under life-threatening situations. If you are considering using these products in the equipment  
listed below, first check the system constructionand required reliability, and take adequate safety measures  
such as a backup system to prevent the equipment from malfunctioning.  
Backbone network equipment  
Traffic-signal control equipment  
Submarine repeater equipment  
Medical equipment  
Transportation equipment (automobiles, trains, ships, etc.)  
Gas alarms, leakage gas auto breakers  
Burglar alarms, fire alarms, emergency equipment  
Nuclear control equipment etc.  
Do not use the products in this Specification for equipment requiring strict reliability such as(but not limited to):  
Aerospace equipment Aeronautical equipment  
10. Warnings  
The MOSFETs should be used inproducts within their absolute maximum rating(voltage, current, tempera-  
ture, etc.).  
The MOSFETs may be destroyed if used beyond the rating.  
We only guarantee the non-repetitive and repetitive Avalanche capability and not for the continuous Ava-  
lanche capability which can be assumed as abnormal condition .Please note the device may be destructed  
from the Avalanche over the specified maximum rating.  
The equipment containing MOSFETs should have adequate fuses or circuit breakers to prevent the equip-  
ment from causing secondary destruction (ex. fire, explosion etc...).  
Use the MOSFETs within their reliability and lifetime under certain environments or conditions. The MOSFETs  
may fail before the target lifetime of your products if used under certain reliability conditions.  
Be carefulwhen handling MOSFETs for ESD damage. (It is an important consideration.)  
Whenhandling MOSFETs, hold them by the case (package) and don’t touch the leads and terminals.  
It is recommended that any handling of MOSFETs is done ongrounded electrically conductive floor and  
tablemats.  
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MS5F5814  
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H04-004-03  
Before touching a MOSFET terminal, Discharge any static electricity from your body and clothes by ground-  
ing out through a high impedance resistor (about 1M)  
When soldering, inorder to protect the MOSFETs from static electricity, ground the soldering iron or  
soldering bath through a low impedance resistor.  
You must designthe MOSFETs to be operated within the specified maximum ratings(voltage, current,  
temperature, etc.) to prevent possible failure or destruction of devices.  
Consider the possible temperature rise not only for the channel and case, but also for the outer leads.  
Do not directly touch the leads or package of the MOSFETs while power is supplied or during operation in  
order to avoid electric shock and burns.  
The MOSFETs are made of incombustible material. However, if a MOSFET fails, it may emit smoke or  
flame. Also, operating the MOSFETs near any flammable place or material may cause the MOSFETs to  
emit smoke or flame in case the MOSFETs become even hotter during operation. Design the arrangement  
to prevent the spread of fire.  
The MOSFETs should not used in an environment in the presence of acid, organic matter, or corrosive  
gas(hydrogen sulfide, sulfurous acid gas etc.)  
The MOSFETs should not used in an irradiated environment since they are not radiation-proof.  
Installation  
Soldering involves temperatures whichexceed the device storage temperature rating. To avoid device  
damage and to ensure reliability, observe the following guidelines from the quality assurance standard.  
Solder temperature and duration (through-hole package)  
Solder temperature  
2605 C  
Duration  
101 seconds  
3.50.5 seconds  
35010 C  
The immersion depth of the lead should basically be up to the lead stopper and the distance should be a  
maximum of 1.5mm from the device.  
When flow-soldering, be careful to avoid immersing the package in the solder bath.  
Refer to the following torque reference when mounting the device on a heat sink. Excess torque applied to  
the mounting screwcauses damage to the device and weak torque will increase the thermal resistance,  
bothof which conditions may destroy the device.  
Table 1: Recommended tightening torques.  
Packagestyle  
TO-220  
Screw  
M3  
Tightening torques  
Note  
30 50 Ncm  
TO-220F  
TO-3P  
TO-3PF  
TO-247  
flatness : <±30m  
roughness : <10m  
Plane off the edges :  
C<1.0mm  
M3  
M3  
40 60 Ncm  
60 80 Ncm  
TO-3PL  
a
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10 / 18  
H04-004-03  
The heat sink should have a flatness within±30m and roughness within 10m. Also, keep the tightening  
torque within the limits of this specification.  
Improper handling may cause isolation breakdownleading to a critical accident.  
ex.) Over plane off the edges of screw hole. (Recommended plane off the edge is C<1.0mm)  
We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is important to  
evenly apply the compound and to eliminate any air voids.  
Storage  
The MOSFETs must be stored at a standard temperature of 5 to 35C and relative humidity of 45 to 75%.  
If the storage area is very dry, a humidifier may be required. In such a case, use only deionized water or  
boiled water, since the chlorine in tap water may corrode the leads.  
The MOSFETs should not be subjected to rapid changes in temperature to avoid condensation on the  
surface of the MOSFETs. Therefore store the MOSFETs in a place where the temperature is steady.  
The MOSFETs should not be stored on top of each other, since this may cause excessive external force on  
the case.  
The MOSFETs should be stored with the lead terminals remaining unprocessed. Rust may cause  
presoldered connections to fail during later processing.  
The MOSFETs should be stored in antistatic containers or shipping bags.  
11.Appendix  
These products do not contain PBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated Diphenyl Ether ).  
These products do not containClass-I ODS and Class-II ODS of ‘Clean Air Act of US’.  
If you have any questions about any part of this Specification, please contact Fuji  
Electric or its sales agent before using the product.  
Neither Fuji nor its agents shall be held liable for any injurycaused by using the products  
not in accordance with the instructions.  
The application examples described in this specification are merelytypical uses of Fuji  
Electric products.  
This specification does not confer any industrial property rights or other rights, nor  
constitute a license for such rights.  
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Allowable Power Dissipation  
PD=f(Tc)  
120  
100  
80  
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
Tc [C]  
Typical Output Characteristics  
ID=f(VDS):80 s pulse test,Tch=25 C  
140  
120  
100  
80  
20V  
10V  
8.0V  
7.5V  
7.0V  
60  
40  
6.5V  
6.0V  
20  
VGS=5.5V  
0
0
1
2
3
4
5
6
7
VDS [V]  
a
MS5F5814  
12 / 18  
H04-004-03  
Typical Transfer Characteristic  
ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C  
100  
10  
1
0.1  
100  
0
1
2
3
4
5
6
7
8
9
10  
VGS[V]  
Typical Transconductance  
gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C  
10  
1
0.1  
0.1  
1
10  
100  
ID [A]  
a
MS5F5814  
13 / 18  
H04-004-03  
Typical Drain-Source on-state Resistance  
RDS(on)=f(ID):80 s pulse test,Tch=25 C  
0.20  
VGS=5.5V  
6.5V  
7.0V  
6.0V  
7.5V  
0.16  
0.12  
0.08  
0.04  
0.00  
10V  
20V  
0
20  
40  
60  
ID [A]  
80  
100  
120  
Drain-Source On-state Resistance  
RDS(on)=f(Tch):ID=33.5A,VGS=10V  
0.08  
0.07  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
0.00  
max.  
typ.  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Tch [C]  
a
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H04-004-03  
Gate Threshold Voltage vs. Tch  
VGS(th)=f(Tch):VDS=VGS,ID=250A  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
max.  
min.  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Tch [C]  
Typical Gate Charge Characteristics  
VGS=f(Qg):ID=67A,Tch=25 C  
14  
12  
10  
8
Vcc=60V  
6
4
2
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
Qg [nC]  
a
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H04-004-03  
Typical Capacitance  
C=f(VDS):VGS=0V,f=1MHz  
Ciss  
103  
102  
101  
Coss  
Crss  
100  
101  
102  
VDS [V]  
Typical Forward Characteristics of Reverse Diode  
IF=f(VSD):80 s pulse test,Tch=25 C  
100  
10  
1
0.1  
0.00  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
VSD [V]  
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Typical Switching Characteristics vs. ID  
t=f(ID):Vcc=48V,VGS=10V,RG=10   
tf  
103  
102  
101  
100  
td(off)  
td(on)  
tr  
10-1  
100  
101  
102  
ID [A]  
Maximum Avalanche Energy vs. starting Tch  
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=67A  
800  
700  
600  
500  
400  
300  
200  
100  
0
IAS=27A  
IAS=41A  
IAS=67A  
0
25  
50  
75  
100  
125  
150  
starting Tch [C]  
a
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Maximum Avalanche Current Pulsewidth  
IAV=f(tAV):starting Tch=25C,Vcc=48V  
103  
102  
101  
100  
10-1  
Single Pulse  
10-8  
10-7  
10-6  
10-5  
10-4  
10-3  
10-2  
tAV [sec]  
Maximum Transient Thermal Impedance  
Zth(ch-c)=f(t):D=0  
101  
100  
10-1  
10-2  
10-3  
10-6  
10-5  
10-4  
10-3  
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厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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