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2SK211-Y

型号:

2SK211-Y

品牌:

TOSHIBA[ TOSHIBA ]

页数:

6 页

PDF大小:

715 K

2SK211  
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type  
2SK211  
FM Tuner Applications  
VHF Band Amplifier Applications  
Unit: mm  
Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)  
High forward transfer admitance: |Y | = 9 mS (typ.)  
fs  
Extremely low reverse transfer capacitance: C = 0.1 pF (typ.)  
rss  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Gate-drain voltage  
Symbol  
Rating  
Unit  
V
18  
10  
V
GDO  
Gate current  
I
mA  
mW  
°C  
G
Drain power dissipation  
Junction temperature  
Storage temperature range  
P
150  
D
T
j
125  
T
stg  
55~125  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
SC-59  
TOSHIBA  
2-3F1C  
Weight: 0.012 g (typ.)  
Marking  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
= −0.5 V, V = 0 V  
Min  
Typ.  
Max  
Unit  
I
V
10  
nA  
V
GSS  
GS  
= −100 μA  
DS  
Gate-drain breakdown voltage  
V
I
18  
(BR) GDO  
G
I
DSS  
(Note)  
Drain current  
V
= 0 V, V = 10 V  
DS  
1.0  
10  
mA  
GS  
Gate-source cut-off voltage  
Forward transfer admittance  
Input capacitance  
V
V
V
V
V
V
V
= 10 V, I = 1 μA  
0.4  
9
4.0  
V
GS (OFF)  
Y ⎪  
DS  
GS  
DS  
GD  
DD  
DD  
D
= 0 V, V = 10 V, f = 1 kHz  
DS  
mS  
pF  
pF  
dB  
dB  
fs  
C
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
6.0  
iss  
rss  
PS  
Reverse transfer capacitance  
Power gain  
C
G
= −10 V, f = 1 MHz  
0.15  
= 10 V, f = 100 MHz (Figure)  
= 10 V, f = 100 MHz (Figure)  
18  
2.5  
Noise figure  
NF  
3.5  
Note: I  
classification O: 1.0~3.0 mA, Y: 2.5~6.0 mA, GR (G): 5.0~10.0 mA  
DSS  
1
2007-11-01  
2SK211  
L : 0.8 mmφ Ag PLATED Cu WIRE 3 TURNS, 10 mm ID, 10 mm LENGTH  
1
L : 0.8 mmφ Ag PLATED Cu WIRE 3.5 TURNS, 10 mm ID, 10 mm LENGTH  
2
Figure 100 MHz G , NF Test Circuit  
PS  
2SK211 is measured at each group by changing R .  
s
Group  
RS (Ω)  
2SK211-O  
2SK211-Y  
2SK211-GR  
0
18 Ω ± 5%  
100 Ω ± 5%  
2
2007-11-01  
2SK211  
3
2007-11-01  
2SK211  
4
2007-11-01  
2SK211  
5
2007-11-01  
2SK211  
RESTRICTIONS ON PRODUCT USE  
20070701-EN GENERAL  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
6
2007-11-01  
厂商 型号 描述 页数 下载

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2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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PANASONIC

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PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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