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IXGH80N40B2

型号：

IXGH80N40B2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

532 K

下载PDF手册
Advance Technical Data  
HiPerFASTTM IGBT  
VCES  
IC25  
= 400 V  
= 80 A  
IXGH 80N40B2  
VCE(sat) < 1.6 V  
tfityp = 85 ns  
Optimized for 10-30 KHz hard  
switching and up to 300 KHz  
resonant switching  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247 AD  
(IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
400  
400  
V
V
TAB)  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
C
E
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
TC = 25°C, 1 ms  
80  
80  
240  
A
A
A
G = Gate,  
C = Collector,  
E = Emitter,  
TAB = Collector  
SSOA  
(RBSOA)  
PC  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ ≤ 300 V  
TC = 25°C  
ICM = 100  
A
Features  
400  
W
z
High current handling capability  
MOS Gate turn-on  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z
- drive simplicity  
Applications  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z
PFC circuits  
z
Uninterruptible power supplies (UPS)  
Md  
Mounting torque (M3)  
1.13/10Nm/lb.in.  
TO-247 AD  
z
Switched-mode and resonant-mode  
Weight  
6
g
power supplies  
z
AC motor speed control  
z
DC servo and robot drives  
z
DC choppers  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
3.0  
5.0  
V
VCE = V  
T = 25°C  
50  
1
µA  
VGE = 0CVES  
TJJ = 150°C  
mA  
IGES  
VCE = 0 V, VGE = 20 V  
100  
nA  
VCE(sat)  
I
= 40 A, VGE = 15 V  
TJ = 25°C  
1.6  
2.5  
V
V
ICC = 160 A, VGE = 15 V  
© 2003 IXYS All rights reserved  
DS99082(08/03)  
IXGH 80N40B2  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = 40 A; VCE = 10 V,  
40  
62  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
∅ P  
Cies  
Coes  
Cres  
4100  
280  
67  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = 40 A, VGE = 15 V, VCE = 300 V  
Inductive load, TJ = 25°C  
Qg  
Qge  
Qgc  
180  
30  
50  
nC  
nC  
nC  
e
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A12  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
A
td(on)  
tri  
td(off)  
tfi  
18  
20  
160  
85  
ns  
ns  
240 ns  
170 ns  
0.9 mJ  
b
b12  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
b
IC = 40 A, VGE = 15 V  
VCE = 320 V, RG = Roff = 2 Ω  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Eoff  
0.46  
e
5.20  
5.72 0.205 0.225  
td(on)  
tri  
Eon  
td(off)  
tfi  
18  
20  
0.4  
240  
160  
0.68  
ns  
ns  
mJ  
ns  
ns  
mJ  
L
19.81 20.32  
4.50  
.780 .800  
.177  
L1  
Inductive load, TJ = 125°C  
IC = 40 A, VGE = 15 V  
VCE = 320 V, RG = Roff = 2 Ω  
∅P 3.55  
Q
R
S
3.65  
.140 .144  
5.89  
4.32  
6.15 BSC  
6.40 0.232 0.252  
5.49  
.170 .216  
242 BSC  
Eoff  
RthJC  
RthCK  
0.31 K/W  
K/W  
(TO-247)  
0.25  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGH 80N40B2  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
320  
280  
240  
200  
160  
120  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
13V  
VGE = 15V  
13V  
11V  
11V  
9V  
9V  
7V  
7V  
5V  
40  
5V  
0
0.5  
0.5  
5
0.75  
1
1.25  
VC E - Volts  
1.5  
1.75  
2
2.25  
0
1
2
3
4
5
6
7
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
VGE = 15V  
IC = 80A  
11V  
9V  
7V  
5V  
IC = 40A  
IC = 20A  
0.75  
1
1.25  
VCE - Volts  
1.5  
1.75  
2
2.25  
-50  
-25  
0
25  
50  
75  
100 125 150  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emiiter voltage  
Fig. 6. Input Admittance  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
120  
100  
80  
60  
40  
20  
0
TJ = 25ºC  
TJ = 125ºC  
25ºC  
-40ºC  
IC = 80A  
40A  
20A  
6
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
VG E - Volts  
© 2003 IXYS All rights reserved  
IXGH 80N40B2  
Fig. 7. Transconductance  
Fig. 8. Dependence of E on RG  
off  
2.7  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = 125ºC  
VGE = 15V  
VCE = 320V  
IC = 80A  
TJ = -40ºC  
25ºC  
125ºC  
IC = 40A  
IC = 20A  
0
20  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
1
2
3
4
5
6
7
8
9
10  
I C - Amperes  
R G - Ohms  
Fig. 10. Dependence of E on  
off  
Fig. 9. Dependence of Eoff on Ic  
Temperature  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
RG = 3.3Ω  
RG = 3.3Ω  
RG= 10Ω  
VGE = 15V  
VCE = 320V  
RG = 10Ω  
VGE = 15V  
VCE = 320V  
- - -  
- - -  
IC = 80A  
TJ = 125ºC  
IC = 40A  
IC = 20A  
TJ = 25ºC  
30  
40  
50  
60  
70  
80  
25 35 45 55 65 75 85 95 105 115 125  
I C - Amperes  
TJ - Degrees Centigrade  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
15  
12  
9
10000  
1000  
100  
f = 1 MHz  
VCE = 200V  
IC = 40A  
IG = 10mA  
C
ies  
C
oes  
6
3
C
res  
0
10  
20  
40  
60  
80 100 120 140 160 180  
0
5
10  
15  
20  
25  
30  
35  
40  
VC E - Volts  
Q G - nanoCoulombs  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGH 80N40B2  
Fig. 13. Maximum Transient Thermal Resistance  
0.35  
0.3  
0.25  
0.2  
0.15  
0.1  
0.05  
0
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2003 IXYS All rights reserved  
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