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IXGR72N60A3H1

型号：

IXGR72N60A3H1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

251 K

下载PDF手册
GenX3TM 600V IGBT  
w/Diode  
VCES  
IC110  
= 600V  
= 52A  
IXGR72N60A3H1  
VCE(sat)  
tfi(typ)  
£ 1.45V  
= 250ns  
(Electrically Isolated Tab)  
Ultra-Low Vsat PT IGBT for up to  
5kHz Switching  
ISOPLUS247TM  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
600  
600  
V
V
VCGR  
TJ = 25C to 150C, RGE = 1M  
G
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
C
E
Isolated Tab  
IC25  
IC110  
IF110  
ICM  
TC = 25C  
75  
52  
A
A
A
A
G = Gate  
E = Emitter  
C
= Collector  
TC = 110C  
TC = 110C  
TC = 25C, 1ms  
32  
400  
SSOA  
VGE = 15V, TVJ = 125C, RG = 3  
ICM = 150  
A
Features  
(RBSOA)  
Clamped Inductive Load  
VCE VCES  
PC  
TC = 25C  
200  
W
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
TJ  
-55 ... +150  
150  
C  
C  
C  
Isolated Mounting Surface  
2500V Electrical Isolation  
Optimized for Low Conduction Losses  
Square RBSOA  
TJM  
Tstg  
-55 ... +150  
VISOL  
FC  
50/60 Hz, RMS, t = 1minute  
Mounting Force  
2500  
V~  
Anti-Parallel Ultra Fast Diode  
International Standard Package  
20..120/4.5..27  
N/lb  
TL  
Maximum Lead Temperature for Soldering  
1.6mm (0.062 in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
TSOLD  
High Power Density  
Low Gate Drive Requirement  
Weight  
5
g
Applications  
Power Inverters  
UPS  
Motor Drives  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
Inrush Current Protection Circuits  
VGE(th)  
ICES  
IC = 250A, VCE = VGE  
3.0  
5.0  
V
VCE = VCES, VGE = 0V  
300 A  
mA  
TJ = 125C  
5
IGES  
VCE = 0V, VGE = 20V  
100 nA  
1.45 V  
VCE(sat)  
IC = 60A, VGE = 15V, Note 1  
DS100143B(01/14)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXGR72N60A3H1  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS247 (IXGR) Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
48  
75  
S
Cies  
Coes  
Cres  
6600  
360  
80  
pF  
pF  
pF  
Qg  
230  
40  
nC  
nC  
nC  
Qge  
Qgc  
IC = 60A, VGE = 15V, VCE = 0.5 • VCES  
80  
td(on)  
tri  
31  
34  
ns  
ns  
Inductive load, TJ = 25C  
IC = 50A, VGE = 15V  
1
2
3
- Gate  
- Collector  
- Emitter  
Eon  
td(off)  
tfi  
1.4  
320  
250  
3.5  
mJ  
ns  
VCE = 480V, RG = 3  
ns  
Eoff  
mJ  
td(on)  
tri  
29  
34  
ns  
ns  
Inductive load, TJ = 125C  
IC = 50A, VGE = 15V  
Eon  
td(off)  
tfi  
2.6  
510  
375  
6.5  
mJ  
ns  
VCE = 480V, RG = 3  
ns  
Eoff  
mJ  
RthJC  
RthCS  
0.62 C/W  
C/W  
0.15  
Reverse Diode (FRED)  
(TJ = 25°C, Unless Otherwise Specified)  
Characteristic Values  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
VF  
IF = 60A, VGE = 0V, Note 1  
1.6  
1.4  
2.3  
1.8  
V
V
TJ = 150°C  
TJ = 100°C  
IRM  
IF = 60A, VGE = 0V,  
8.3  
A
-diF/dt = 200A/μs, VR = 300V  
trr  
IF = 60A, -di/dt = 200A/μs, VR = 300V, TJ = 100°C  
140  
ns  
RthJC  
0.8 °C/W  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGR72N60A3H1  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
120  
100  
80  
60  
40  
20  
0
V
= 15V  
GE  
V
= 15V  
GE  
300  
240  
180  
120  
60  
13V  
11V  
13V  
11V  
9V  
7V  
9V  
7V  
0
0.0  
0.0  
5
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
1.8  
15  
0
1
2
3
4
5
6
7
8
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
120  
100  
80  
60  
40  
20  
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
11V  
9V  
I
I
= 120A  
= 60A  
C
C
7V  
5V  
I
= 30A  
100  
C
-50  
-25  
0
25  
50  
75  
125  
150  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
T
J
= 25ºC  
I
= 120A  
C
T
J
= 125ºC  
60A  
30A  
25ºC  
- 40ºC  
60  
40  
20  
0
7
9
11  
13  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGE - Volts  
VGE - Volts  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXGR72N60A3H1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
16  
14  
12  
10  
8
T
J
= - 40ºC  
120  
100  
80  
60  
40  
20  
0
V
= 300V  
CE  
I
I
= 60A  
C
G
= 10mA  
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0
40  
80  
120  
160  
200  
240  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
160  
140  
120  
100  
80  
100,000  
10,000  
1,000  
100  
f
= 1 MHz  
C
ies  
C
C
oes  
res  
60  
T
= 125ºC  
40  
J
R
= 3Ω  
G
20  
dv / dt < 10V / ns  
0
10  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGR72N60A3H1  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
18  
16  
14  
12  
10  
8
9
8
7
6
5
4
3
2
1
0
18  
16  
14  
12  
10  
8
6.75  
6.00  
5.25  
4.50  
3.75  
3.00  
2.25  
1.50  
0.75  
0.00  
E
R
E
on - - - -  
off  
= 3ꢀ  
V
  
= 15V  
GE  
G
I
= 100A  
C
V
= 480V  
CE  
T = 125ºC  
J
E
E
on - - - -  
off  
T = 125ºC , V = 15V  
J
GE  
V
= 480V  
CE  
I
I
= 50A  
C
C
T = 25ºC  
J
6
6
4
4
2
2
= 25A  
15  
0
0
0
5
10  
20  
25  
30  
35  
20  
30  
40  
50  
60  
70  
80  
90  
100  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
390  
387  
384  
381  
378  
375  
372  
369  
366  
363  
360  
1400  
1300  
1200  
1100  
1000  
900  
18  
7
t f i  
t
d(off) - - - -  
E
R
E
on - - - -  
off  
16  
14  
12  
10  
8
6
5
5
4
3
2
2
1
0
T = 125ºC, V = 15V  
J
GE  
= 3ꢀ  
V
  
= 15V  
GE  
G
V
= 480V  
CE  
V
= 480V  
CE  
I
I
= 100A  
= 50A  
C
C
I
= 100A  
C
I
= 50A  
C
800  
6
700  
4
600  
I
= 25A  
C
500  
2
I
= 25A  
105  
C
400  
0
0
5
10  
15  
20  
25  
30  
35  
25  
35  
45  
55  
65  
75  
85  
95  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
400  
380  
360  
340  
320  
300  
280  
260  
240  
220  
580  
540  
500  
460  
420  
380  
340  
300  
260  
220  
400  
380  
360  
340  
320  
300  
280  
260  
240  
220  
610  
570  
530  
490  
450  
410  
370  
330  
290  
250  
TJ = 125ºC  
I
= 25A, 50A, 100A  
C
t f i  
R
td(off)  
- - - -  
= 3ꢀ , VGE = 15V  
G
VCE = 480V  
t f i  
t
d(off) - - - -  
R
G
= 3ꢀ , V = 15V  
GE  
TJ = 25ºC  
50  
V
= 480V  
CE  
20  
30  
40  
60  
70  
80  
90  
100  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
IC - Amperes  
TJ - Degrees Centigrade  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXGR72N60A3H1  
Fig. 19. Inductive Turn-on Switching Times vs.  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
td(on)  
- - - -  
120  
110  
100  
90  
120  
110  
100  
90  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
t r i  
td(on) - - - -  
t r i  
T = 25ºC  
J
T = 125ºC , V = 15V  
J
GE  
R
G
= 3ꢀ , V = 15V  
GE  
V
= 480V  
CE  
V
= 480V  
CE  
I
= 100A  
C
T = 125ºC  
J
80  
80  
70  
70  
60  
60  
I
= 50A  
C
I
= 25A  
C
50  
50  
40  
40  
30  
30  
20  
20  
10  
10  
0
5
10  
15  
20  
25  
30  
35  
20  
30  
40  
50  
60  
70  
80  
90  
100  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
I
= 100A  
C
t r i  
td(on) - - - -  
R
G
= 3 , V = 15V  
  
GE  
V
= 480V  
CE  
I
= 50A  
C
I
= 25A  
95  
C
25  
35  
45  
55  
65  
75  
85  
105  
115  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGR72N60A3H1  
Fig. 22 Typ. Reverse Recovery  
Charge Qrr  
Fig. 23 Typ. Peak Reverse  
Current IRM  
Fig. 21 Forward Current IF vs. VF  
Fig. 24 Typ. Dynamic Parameters  
Qrr, IRM  
Fig. 25 Typ Recovery Time trr  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
Pulse Width [s]  
Fig. 26 Maximum Transient Thermal Impedance Junction to Case (for Diode)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_72N60A3(76)04-23-09-C  
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