IXGR6N170A
Symbol
Test Conditions
Characteristic Values
ISOPLUS247 (IXGR) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = 6A, VCE = 20V, Note 1
2.0
3.5
S
Cies
Coes
Cres
390
20
7
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
Qg
18.5
2.8
nC
nC
nC
Qge
Qgc
IC = 6A, VGE = 15V, VCE = 0.5 • VCES
8.2
td(on)
tri
46
40
ns
ns
Inductive load, TJ = 25°C
IC = 6A, VGE = 15V
Eon
td(off)
tfi
0.59
220
32
mJ
VCE = 0.5 • VCES, RG = 33Ω
400 ns
65 ns
Note 3
Eoff
0.18
0.36 mJ
td(on)
tri
48
43
ns
ns
Inductive load, TJ = 125°C
IC = 6A, VGE = 15V
VCE = 0.5 • VCES, RG = 33Ω
Note 3
Eon
td(off)
tfi
0.62
230
41
mJ
ns
ns
Eoff
0.25
mJ
RthJC
RthCK
2.5 °C/W
°C/W
0.15
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Part must be heatsunk for high-temp Ices measurement.
3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
