4N70K-TA
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs.
Gate Threshold Voltage
300
250
200
150
100
50
300
250
200
150
100
50
0
0
0
200 400 600 800 1000 1200 1400
1
0
2
3
4
5
6
7
Drain-Source Breakdown Voltage, BVDSS(V)
Gate Threshold Voltage, VTH (V)
Continuous Drain-Source Diode
Forward Current vs.
Drain-Source On-State Resistance
Characteristics
Source to Drain Voltage
6
2.5
2.0
VGS=10V
ID=2.2A
5
4
3
1.5
1.0
0.5
2
1
0
0
0
2
4
6
8
200 400 600 800 1000 1200 1400
Source to Drain Voltage, VSD (mV)
0
Drain to Source Voltage, VDS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
7 of 7
QW-R205-040.B
www.unisonic.com.tw
