5N60K-MT
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS =0V, ID = 250μA
600
V
VDS =600V, VGS = 0V
VGS =30V, VDS = 0V
1
μA
Forward
Reverse
100
-100
Gate-Source Leakage Current
IGSS
nA
VGS =-30V, VDS = 0V
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
ID =250μA, Referenced to 25℃
0.6
V/°C
VGS(TH)
RDS(ON)
VDS =VGS, ID = 250μA
2.0
4.0
V
VGS =10V, ID = 2.5A
1.5 2.2
Ω
CISS
COSS
CRSS
460 620 pF
VDS = 25V, VGS = 0V,
Output Capacitance
70
8
90
12
pF
pF
f = 1.0MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
50
60
ns
ns
Turn-On Rise Time
VDD=30V, ID =0.5A, RG =25Ω
(Note 1, 2)
Turn-Off Delay Time
120
35
ns
Turn-Off Fall Time
ns
Total Gate Charge
QG
18
nC
nC
nC
V
DS=50V, ID=1.3A, VGS=10V
Gate-Source Charge
QGS
QGD
6.7
4.5
(Note 1, 2)
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, IS = 5A
1.4
5
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
20
A
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
4 of 7
QW-R205-038.B
www.unisonic.com.tw
