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NX6351GP31-AZ

型号:

NX6351GP31-AZ

品牌:

CEL[ CALIFORNIA EASTERN LABS ]

页数:

6 页

PDF大小:

938 K

A Business Partner of Renesas Electronics Corporation.  
Preliminary  
NX6351GP Series  
Data Sheet  
LASER DIODE  
R08DS0087EJ0100  
Rev.1.00  
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE  
FOR 9.8 Gb/s CPRI and 10G E-PON ONU APPLICATION  
Feb 25, 2013  
DESCRIPTION  
The NX6351GP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple  
Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser  
diode with InGaAs monitor PIN-PD.  
APPLICATIONS  
9.8 Gbps CPRI  
10G E-PON ONU  
FEATURES  
Optical output power  
Low threshold current  
Differential efficiency  
Wide operating temperature range  
InGaAs monitor PIN-PD  
CAN package  
PO = 8.5 mW  
Ith = 7 mA  
ηd = 0.35 W/A  
TC = 40 to +85°C  
φ 5.6 mm  
10.2 mm  
Focal point  
R08DS0087EJ0100 Rev.1.00  
Feb 25, 2013  
Page 1 of 5  
A Business Partner of Renesas Electronics Corporation.  
NX6351GP Series  
Chapter Title  
PACKAGE DIMENSIONS (UNIT: mm)  
*2  
φ
( 5.6)  
*2  
φ
( 4.3)  
*2  
φ
( 3.75)  
1.0 0.1  
BOTTOM VIEW  
1
(0.3)*2  
4
2
Focal Point*1  
Δ
Δ
x = 200  
y = 200  
μ
μ
ꢀ ꢁMA.  
ꢀ ꢁMA.  
3
PIN CONNECTIONS  
1
LD  
4
2
Reference Plane  
3
PD  
φ
4– 0.45  
φ
2.0  
P. C. D  
*1 Focal Point: M point to get ꢀaxiꢀuꢀ optical output power froꢀ fiber.  
.
*2 ( ) indicates noꢀinal diꢀension  
R08DS0087EJ0100 Rev.1.00  
Feb 25, 2013  
Page 2 of 5  
A Business Partner of Renesas Electronics Corporation.  
NX6351GP Series  
Chapter Title  
ORDERING INFORMATION  
Part Number  
Package  
Pin Connections  
1
1
NX6351GPxx-AZ 4-pin CAN with aspherical lens cap  
LD  
4
2
3
PD  
Note: 1. The last two digits (”xx”) of Part Number indicates Wavelength Code.  
The relationships between the code and wavelength are as follows.  
WAVELENGTH CODE  
WAVELENGTH (nm)  
27  
29  
31  
33  
35  
1 270  
1 290  
1 310  
1 330  
1 350  
Remarks 1. The color of lens cap might be observed differently.  
2. The hermetic test will be performed as AQL 1.0%.  
R08DS0087EJ0100 Rev.1.00  
Feb 25, 2013  
Page 3 of 5  
A Business Partner of Renesas Electronics Corporation.  
NX6351GP Series  
Chapter Title  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)  
Parameter  
Optical Output Power  
Symbol  
PO  
Ratings  
15  
Unit  
mW  
mA  
V
Forward Current of LD  
IF  
120  
Reverse Voltage of LD  
VR  
2.0  
Forward Current of PD  
IF  
10.0  
mA  
V
Reverse Voltage of PD  
Operating Case Temperature  
Storage Temperature  
VR  
15  
TC  
40 to +85  
40 to +95  
350 (3 sec.)  
85  
°C  
°C  
°C  
%
Tstg  
Tsld  
RH  
Lead Soldering Temperature  
Relative Humidity (noncondensing)  
RECOMMENDED LD DRIVE CURRENT AT MODULE LEVEL  
Parameter  
Bias Current  
Symbol  
Conditions  
TC = 25°C  
TC = 85°C  
MIN.  
TYP.  
30  
MAX.  
Unit  
Ibias  
mA  
70  
ELECTRO-OPTICAL CHARACTERISTICS  
(TC = 40 to +85°C, CW, BOL, unless otherwise specified)  
Parameter  
Symbol  
Conditions  
MIN.  
TYP.  
MAX.  
Unit  
Gb/s  
mW  
V
Signaling Rate  
9.8304  
2.0  
15  
Optical Output Power  
Operating Voltage  
Threshold Current  
PO  
Vop  
Ith  
8.5  
PO = 8.5 mW  
TC = 25°C  
7
mA  
30  
Differential Efficiency  
ηd  
λp  
PO = 8.5 mW, TC = 25°C  
PO = 8.5 mW  
0.23  
0.13  
1 260  
1 280  
1 300  
1 320  
1 340  
35  
W/A  
nm  
Peak Emission Wavelength  
PO = 8.5 mW NX6351GP27  
NX6351GP29  
1 280  
1 300  
1 320  
1 340  
1 360  
NX6351GP31  
NX6351GP33  
NX6351GP35  
Side Mode Suppression Ratio  
Rise Time  
SMSR  
PO = 8.5 mW  
dB  
ps  
1
tr  
tf  
20-80% ∗  
80-20% ∗  
100  
50  
1
Fall Time  
50  
ps  
Monitor Current  
Monitor Dark Current  
Im  
ID  
VR = 1.5 V, PO = 8.5 mW  
VR = 3.3 V, TC = 25°C  
VR = 3.3 V  
1 000  
10  
μA  
nA  
100  
20  
Monitor PD Terminal  
Capacitance  
Ct  
VR = 3.3 V, f = 1 MHz  
pF  
Note: 1. 9.8304 Gb/s, PRBS 231 1, NRZ, Duty Cycle = 50%  
R08DS0087EJ0100 Rev.1.00  
Feb 25, 2013  
Page 4 of 5  
A Business Partner of Renesas Electronics Corporation.  
NX6351GP Series  
Chapter Title  
SAFETY INFORMATION ON THIS PRODUCT  
SEMICONDUCTOR LASER  
DANGER  
INVISIBLE LASER RADIATION  
AVOID DIRECT EXPOSURE TO BEAM  
AVOID EXPOSURE-Invisible  
Laser Radiation is emitted from  
this aperture  
OUTPUT POWER  
WAVELENGTH  
mW MAX  
nm  
CLASS lllb LASER PRODUCT  
A laser beam is emitted from this diode during operation.  
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of  
eyesight.  
Warning Laser Beam  
Caution GaAs Products  
• Do not look directly into the laser beam.  
• Avoid exposure to the laser beam, any reflected or collimated beam.  
This product uses gallium arsenide (GaAs).  
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe  
the following points.  
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws  
and/or ordinances, dispose of the product as recommended below.  
1. Commission a disposal company able to (with a license to) collect, transport and dispose of  
materials that contain arsenic and other such industrial waste materials.  
2. Exclude the product from general industrial waste and household garbage, and ensure that the  
product is controlled (as industrial waste subject to special control) up until final disposal.  
• Do not burn, destroy, cut, crush, or chemically dissolve the product.  
• Do not lick the product or in any way allow it to enter the mouth.  
R08DS0087EJ0100 Rev.1.00  
Feb 25, 2013  
Page 5 of 5  
Revision History  
NX6351GP Series Data Sheet  
Description  
Summary  
Rev.  
1.00  
Date  
Page  
Feb 25, 2013  
First edition issued  
All trademarks and registered trademarks are the property of their respective owners.  
C - 1  
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