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PXAC201202FCV2R250

型号：

PXAC201202FCV2R250

品牌：

INFINEON[ Infineon ]

页数：

10 页

PDF大小：

1361 K

下载PDF手册
PXAC201202FC  
Thermally-Enhanced High Power RF LDMOS FET  
120 W, 28 V, 1800 – 2200 MHz  
Description  
The PXAC201202FC is a 120-watt LDMOS FET for use in multi-  
standard cellular power amplifier applications in the 1800 to 2200 MHz  
frequency band.Its asymmetric and dual-path design make it ideal for  
Doherty amplifier designs. It features input and output matching, and  
a thermally-enhanced package with earless flange.Manufactured with  
Infineon's advanced LDMOS process, this device provides excellent  
thermal performance and superior reliability.  
PXAC201202FC  
Package H-37248-4  
Features  
Single-carrier 3GPP WCDMA  
VDD = 28 V, IDQ = 240 mA, ƒ = 1805 MHz  
3.84 MHz bandwidth  
•ꢀ Broadband internal matching  
•ꢀ Asymmetric Doherty design  
- Main: P1dB = 35 W Typ  
- Peak: P1dB = 80 W Typ  
24  
20  
16  
12  
8
60  
40  
20  
0
•ꢀ Broadband internal matching  
Efficiency  
•ꢀ CW performance in a Doherty configuration,  
1805 MHz, 28 V  
- Output power = 100 W P  
1dB  
Gain  
- Gain = 17.3 dB at 17.8 W Avg.  
- Efficiency = 46% at 17.8 W Avg.  
•ꢀ CW performance in a Doherty configuration,  
2100 MHz, 28 V  
PAR @ 0.01% CCDF  
-20  
-40  
- Output power = 15.8 W Avg.  
- Gain = 15.5 dB  
4
- Efficiency = 46%  
0
c201202fc-v2-gr1a -60  
50  
•ꢀ Capable of handling 10:1 VSWR @ 28 V,  
30  
35  
40  
45  
16 W (CW) output power  
•ꢀ Integrated ESD protection: Human Body Model,  
Average Output Power (dBm)  
Class 1C (per JESD22-A114)  
•ꢀ Low thermal resistance  
•ꢀ Pb-free and RoHS compliant  
RF Specifications, 1880 MHz  
One-carrier WCDMA Characteristics (tested in Infineon Doherty test fixture)  
= 28 V, V = 1.4 V, I = 240 mA, P = 16 W average, ƒ = 1880 MHz. 3GPP WCDMA signal: 3.84 MHz band-  
V
DD  
GS(peak)  
DQ  
OUT  
width, 10 dB PAR @0.01% probability on CCDF.  
Characteristic  
Symbol  
Min  
16  
Typ  
17  
Max  
—
Unit  
dB  
Gain  
G
ps  
Drain Efficiency  
hD  
43  
46  
—
%
Adjacent Channel Power Ratio  
ACPR  
—
–29  
–26  
dBc  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 10  
Rev. 05.1, 2016-06-22  
PXAC201202FC  
RF Specifications, 2140 MHz  
One-carrier WCDMA Characteristics (not subject to production test—verified by design/characterization in Infineon  
Doherty test fixture)  
V
DD  
= 28 V, V  
= 1.2 V, I  
= 240 mA, P  
= 16 W average, ƒ = 2140 MHz. 3GPP WCDMA signal: 3.84 MHz band-  
GS(peak)  
DQ  
OUT  
width, 10 dB PAR @0.01% CCDF.  
Characteristic  
Gain  
Symbol  
Min  
16.0  
39  
Typ  
16.5  
42  
Max  
—
Unit  
dB  
G
ps  
Drain Efficiency  
hD  
—
%
Adjacent Channel Power Ratio  
ACPR  
—
–29  
–27  
dBc  
DC Characteristics  
Characteristic  
Conditions  
Symbol  
Min  
Typ  
—
Max  
—
Unit  
V
Drain-source Breakdown Voltage  
Drain Leakage Current  
V
GS  
= 0 V, I = 10 mA  
V
(BR)DSS  
65  
—
DS  
V
V
= 28 V, V = 0 V  
I
I
—
1.0  
10.0  
1.0  
—
µA  
µA  
µA  
W
DS  
DS  
GS  
DSS  
DSS  
GSS  
= 63 V, V = 0 V  
—
—
GS  
Gate Leakage Current  
V
GS  
= 10 V, V = 0 V  
DS  
I
—
—
On-state Resistance  
(main)  
(peak)  
V
GS  
= 10 V, V = 0.1 V  
DS  
R
—
0.3  
0.16  
2.69  
0.7  
DS(on)  
DS(on)  
V
GS  
= 10 V, V = 0.1 V  
DS  
R
—
—
W
Operating Gate Voltage (main)  
(peak)  
V
= 28 V, I  
= 28 V, I  
= 242 mA  
= 0 A  
V
GS  
2.5  
0.5  
2.8  
1.6  
V
DS  
DQ  
DQ  
V
V
GS  
V
DS  
Maximum Ratings  
Parameter  
Symbol  
Value  
65  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
Operating Voltage  
V
DSS  
V
–6 to +10  
0 to +32  
225  
V
GS  
DD  
V
V
Junction Temperature  
Storage Temperature Range  
T
J
°C  
T
STG  
–65 to +150  
0.7  
°C  
Thermal Resistance (T  
= 70°C, 100 W CW)  
R
°C/W  
CASE  
JC  
q
Ordering Information  
Type and Version  
PXAC201202FC V2 R0  
PXAC201202FC V2 R250  
Data Sheet  
Order Code  
Package and Description  
Shipping  
PXAC201202FCV2R0XTMA1  
H-37248-4, ceramic open-cavity, earless  
Tape & Reel, 50 pcs  
Tape & Reel, 250 pcs  
Rev. 05.1, 2016-06-22  
PXAC201202FCV2R250XTMA1 H-37248-4, ceramic open-cavity, earless  
2 of 10  
PXAC201202FC  
Typical Performance (data taken in an Infineon test fixture)  
Single-carrier 3GPP WCDMA  
VDD = 28 V, IDQ = 240 mA, ƒ = 1880 MHz  
3.84 MHz bamdwidth  
Single-carrier 3GPP WCDMA  
VDD = 28 V, IDQ = 240 mA, ƒ = 1842 MHz  
3.84 MHz bandwidth  
24  
20  
16  
12  
8
60  
40  
20  
0
24  
20  
16  
12  
8
60  
40  
20  
0
Efficiency  
Efficiency  
Gain  
Gain  
-20  
-40  
-60  
-20  
-40  
-60  
PAR @ 0.01% CCDF  
PAR @ 0.01% CCDF  
4
4
c201202fc-v2-gr1b  
0
c201202fc-v2-gr1c  
0
30  
35  
40  
45  
50  
30  
35  
40  
45  
50  
Average Output Power (dBm)  
Average Output Power (dBm)  
Single-carrier 3GPP WCDMA  
VDD = 28 V, IDQ = 240 mA,  
ƒ = 1805 –1880 MHz,  
3.84 MHz bandwidth, 10 dB PAR  
Single-carrier 3GPP WCDMA  
Broadband Performance  
VDD = 28 V, IDQ = 240 mA, POUT = 42 dBm,  
PAR = 10 dB PAR  
-10  
-20  
-30  
-40  
-50  
-60  
-70  
60  
50  
40  
30  
20  
10  
0
24  
22  
20  
18  
16  
14  
12  
60  
50  
40  
30  
20  
10  
0
Efficiency  
Efficiency  
Gain  
1805 MHz  
1842 MHz  
1880 MHz  
c201202fc-v2-gr2d  
c201202fc-v2-gr3  
30  
35  
40  
45  
50  
1650  
1750  
1850  
1950  
2050  
Average Output Power (dBm)  
Frequency (MHz)  
Data Sheet  
3 of 10  
Rev. 05.1, 2016-06-22  
PXAC201202FC  
Typical Performance (cont.)  
Single-carrier 3GPP WCDMA  
CW Performance  
VDD = 28 V, IDQ = 240mA  
Broadband Performance  
VDD = 28 V, IDQ = 240 mA, POUT = 42 dBm,  
PAR = 10 dB  
-15  
-5  
35  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
Efficiency  
-20  
-25  
-30  
-35  
-40  
-45  
-10  
-15  
-20  
-25  
-30  
-35  
Return Loss  
Gain  
30  
1805 MHz  
1842 MHz  
1880 MHz  
ACP Up  
1850  
0
c201202fc-v2-gr5  
c201202fc-v2-gr4  
25  
35  
40  
45  
50  
55  
1650  
1750  
1950  
2050  
Output Power (dBm)  
Frequency (MHz)  
CW Performance  
at selected VDD  
IDQ = 240 mA, ƒ = 1805 MHz  
CW Performance  
at selected VDD  
IDQ = 240 mA, ƒ = 1842.5 MHz  
35  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
35  
30  
25  
20  
15  
10  
5
70  
Efficiency  
Efficiency  
60  
50  
40  
30  
20  
10  
0
Gain  
Gain  
VDD = 32 V  
DD = 28V  
VDD = 32 V  
DD = 28V  
VDD = 24V  
V
V
VDD = 24V  
0
c201202fc-v2-gr6a  
c201202fc-v2-gr6b  
0
25  
30  
35  
40  
45  
50  
55  
25  
30  
35  
40  
45 50  
55  
Output Power (dBm)  
Output Power (dBm)  
Data Sheet  
4 of 10  
Rev. 05.1, 2016-06-22  
PXAC201202FC  
Typical Performance (cont.)  
CW Performance  
at selected VDD  
IDQ = 240 mA, ƒ = 1880 MHz  
Small Signal CW  
Gain & Input Return Loss, single side  
VDD = 28 V, IDQ = 350 mA  
35  
70  
60  
50  
40  
30  
20  
10  
0
20  
-2  
Efficiency  
30  
18  
16  
14  
12  
-6  
Gain  
25  
Gain  
20  
-10  
-14  
-18  
15  
10  
VDD = 32 V  
Return Loss  
V
DD = 28V  
5
0
VDD = 24V  
c201202fc-v2-gr7  
c201202fc-v2-gr6c  
1800  
1825  
1850  
1875  
1900  
25  
30  
35  
40  
45  
50  
55  
Output Power (dBm)  
Frequency (MHz)  
See next page for load pull performance  
Data Sheet  
5 of 10  
Rev. 05.1, 2016-06-22  
PXAC201202FC  
Load Pull Performance  
Z Source  
Z Load  
D1  
S
G1  
G2  
D2  
Main side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 250 mA  
P
1dB  
Class AB  
Max Output Power  
Max PAE  
Freq  
[MHz]  
Zs  
[W]  
Zl  
[W]  
Gain  
[dB]  
P
P
[W]  
PAE  
[%]  
Zl  
[W]  
Gain  
[dB]  
P
P
OUT  
[W]  
PAE  
[%]  
OUT  
OUT  
OUT  
[dBm]  
46.79  
46.58  
46.92  
[dBm]  
45.00  
44.81  
45.05  
1810  
1840  
1880  
3.92 – j12.74  
4.13 – j12.84  
4.54 – j14.31  
8.74 – j8.12  
8.56 – j7.87  
8.66 – j8.19  
19.55  
19.43  
19.37  
47.75  
45.50  
49.20  
53.6  
52.3  
55.3  
14.51 – j15.32  
15.46 – j14.87  
18.77 – j12.73  
21.55  
21.52  
21.53  
31.65  
30.28  
31.98  
62.1  
61.3  
65.2  
Peak side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 540 mA  
P
1dB  
Class AB  
Max Output Power  
Max PAE  
Freq  
[MHz]  
Zs  
[W]  
Zl  
[W]  
Gain  
[dB]  
P
P
[W]  
PAE  
[%]  
Zl  
[W]  
Gain  
[dB]  
P
P
OUT  
[W]  
PAE  
[%]  
OUT  
OUT  
OUT  
[dBm]  
49.89  
49.85  
50.12  
[dBm]  
48.49  
48.71  
48.55  
1810  
1840  
1880  
3.75 – j8.61  
3.69 – j8.66  
5.57 – j9.39  
2.62 – j5.15  
2.99 – j4.99  
3.09 – j5.13  
18.47  
19.05  
19.31  
97.50  
96.61  
102.8  
48.3  
51.0  
50.1  
4.96 – j7.28  
5.17 – j6.42  
6.31 – j6.59  
20.92  
20.80  
21.34  
70.63  
74.30  
71.61  
59.9  
59.2  
63.2  
Reference Circuit, 1880 MHz  
DUT  
Reference Circuit Part No. LTA/PXAC201202FC V2  
PCB  
Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66  
Find Gerber files for this reference fixture on the Infineon Web site at (www.infineon.com/rfpower)  
PXAC201202FC V2  
Data Sheet  
6 of 10  
Rev. 05.1, 2016-06-22  
PXAC201202FC  
Reference Circuit (cont.)  
(60)  
RO4350, .020  
RO4350, .020 (61)  
C204  
C104  
C105  
C208  
C203  
C212  
VDD  
C207  
R101  
C206  
C210  
C214  
C108  
C103  
C211  
C209  
C109  
U1  
RF_IN  
RF_OUT  
C217  
C102  
C201  
C110  
R102  
R103  
C101  
C205  
VDD  
C106  
VGS  
C202  
C107  
C213  
C216  
C215  
PXAC201202FC_IN_01  
PXAC201202FC_OUT_01  
c
2 0 1 2 0 2 f c _ c d _ 2 0 1 4 - 0 7 - 0 9  
Reference circuit assembly diagram (not to scale)  
Component Information  
Component  
Input  
Description  
Manufacturer  
P/N  
C101  
Chip capacitor, 2.2 pF  
Chip capacitor, 18 pF  
Chip capacitor, 1.5 pF  
Capacitor, 10 µF, 50 V  
Chip capacitor, 0.3 pF  
Chip capacitor, 0.3 pF  
Resistor, 10 Ohm  
ATC  
ATC600F2R2CW250T  
ATC600F180JW250T  
ATC600F1R5CW250T  
UMK325C7106MM-T  
ATC600F0R3CW250T  
ATC600F0R3CW250T  
ERJ-3GEYJ  
C102, C105, C107  
C103  
ATC  
ATC  
C104, C106  
C108  
Taiyo Yuden  
ATC  
C109, C110  
R101, R103  
R102  
ATC  
Panasonic Electronic Components  
Resistor, 50 Ohm  
Anaren  
Anaren  
RFP060120A15Z50  
X3C19P1-05S  
U1  
Hybrid coupler, 5 dB, 90°  
Output  
C201, C202, C209, C210,  
C211, C212  
Chip capacitor, 18 pF  
Capacitor, 10 µF, 50 V  
ATC  
ATC600F180JW250T  
UMK325C7106MM-T  
C203, C207, C208, C213,  
C215, C216, C217  
Taiyo Yuden  
C204  
C205  
C206  
C214  
Capacitor, 220 µF, 50 V  
Chip capacitor, 1.8 pF  
Chip capacitor, 0.3 pF  
Chip capacitor, 0.5 pF  
Cornell Dubilier Electronics (CDE)  
SK221M050ST  
ATC  
ATC  
ATC  
ATC600F1R8CW250T  
ATC600F0R3CW250T  
ATC600F0R5CW250T  
Data Sheet  
7 of 10  
Rev. 05.1, 2016-06-22  
PXAC201202FC  
Pinout Diagram (top view)  
S
Pin  
D1  
D2  
G1  
G2  
S
Description  
D1  
D2  
Drain device 1 (main)  
Drain device 2 (peak)  
Gate device 1 (main)  
Gate device 2 (peak)  
Source (flange)  
Main  
Peak  
H-37248-4_pd_10-10-2012  
G1  
G2  
See next page for package mechanical specifications  
Data Sheet  
8 of 10  
Rev. 05.1, 2016-06-22  
PXAC201202FC  
Package Outline Specifications  
Package H-37248-4  
(8.89  
[.350])  
(5.08  
[.200])  
2X 45° X 2.72  
[45° X .107]  
C
L
+0.13  
-0.38  
4X R0.76  
2X 4.83±0.51  
[.190±0.020]  
D1  
D2  
+0.005  
-0.015  
R.030  
[
]
FLANGE 9.78  
[.385]  
LID 9.40  
[.370]  
19.43±0.51  
[.765±0.020]  
C
L
G1  
G2  
4X 3.81  
[.150]  
2X 12.70  
[.500]  
SPH 1.57  
[.062]  
19.81±0.20  
[.780±0.008]  
1.02  
[.040]  
H-37248-4_po_02_01-09-2013  
3.76±0.25  
[.148±0.010]  
C
L
20.57  
[.810]  
S
Diagram Notes—unless otherwise specified:  
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.  
2. Primary dimensions are mm. Alternate dimensions are inches.  
3. All tolerances 0.127 [.005].  
4. Pins: D1, D2 – drain, S (flange) – source, G1, G2 – gate.  
5. Lead thickness: 0.10 +0.076/–0.025 [.004 +.003/–.001].  
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].  
Find the latest and most complete information tabout products and packaging at the Infineon Internet page  
(www.infineon.com/rfpower)  
Data Sheet  
9 of 10  
Rev. 05.1, 2016-06-22  
PXAC201202FC V2  
Revision History  
Revision Date  
Data Sheet  
Page  
Subjects (major changes in comparison with previous revision)  
01  
2014-02-06 Advance  
All  
New product, proposed only.  
Data Sheet reflects released product specifications, including reference  
circuit and performance information.  
02  
2014-03-07 Production  
2014-03-12 Production  
All  
1, 2,  
3, 6  
(1) Add features, update graph. (2) Update Operating Gate Voltage.  
(3) Update two graphs. (6) Add Load Pull tables.  
03  
04  
2014-06-27 Production  
2014-08-25 Production  
2014-08-25 Production  
2016-06-22 Production  
All  
7
Product now V2.  
04.1  
05  
Assembly diagram: position of C201 changed.  
RF Specifications at 2140 MHz: values updated.  
Updated ordering information  
2
05.1  
2
We Listen toYour Comments  
Any information within this document that you feel is wrong, unclear or missing at all?  
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to:  
(highpowerRF@infineon.com)  
To request other information, contact us at:  
+1 877 465 3667 (1-877-GO-LDMOS) USA  
or +1 408 776 0600 International  
Edition 2016-06-22  
Published by  
Infineon Technologies AG  
85579 Neubiberg, Germany  
© 2014 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.  
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the  
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,  
including without limitation, warranties of non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact the nearest  
Infineon Technologies Office (www.infineon.com/rfpower).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in question,  
please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-  
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device  
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be  
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be endangered.  
Data Sheet  
10 of 10  
Rev. 05.1, 2016-06-22  
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 		PXA270 电气，机械和热规格[ Electrical, Mechanical, and Thermal Specification ] 126 页

ACTEL

 		PXA270 为PXA270平台的存储解决方案[ Storage solution for PXA270 platform ] 2 页

ACTEL

 		PXA300 为Marvell公司的PXA300 / 310平台存储解决方案[ Storage Solution for Marvell’s PXA300/310 Platform ] 2 页

MARVELL

 		PXA300 可扩展性能高达624兆赫的高性价比和高能效的智能手机，嵌入式解决方案，以及手持设备[ Scalable Performance up to 624 MHz for Cost-Effective and Power-Efficient Smartphones, Embedded Solutions, and Handheld Devices ] 4 页

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