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PXAC260602FCV1R250XTMA1

型号：

PXAC260602FCV1R250XTMA1

品牌：

INFINEON[ Infineon ]

页数：

8 页

PDF大小：

551 K

下载PDF手册
PXAC260602FC  
Thermally-Enhanced High Power RF LDMOS FET  
60 W, P @ 28 V, 2620 – 2690 MHz  
3dB  
Description  
PXAC260602FC  
Package H-37248-4  
The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical  
design intended for use in multi-standard cellular power amplifier  
applications in the 2620 to 2690 MHz frequency band. Features  
include dual-path design, high gain and thermally-enhanced package  
with earless flanges. Manufactured with Infineon's advanced LDMOS  
process, this device provides excellent thermal performance and  
superior reliability.  
Features  
•
Main: Input matched  
Peak: Input and output matching  
Two-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 85 mA, VGS = 2.62V,  
ƒ = 2690 MHz, 3GPP WCDMA signal,  
PAR = 8 dB, 10 MHz carrier spacing,  
BW 3.84 MHz  
•
Asymmetric Doherty design  
- Main: P1dB = 15 W Typ  
- Peak: P1dB = 50 W Typ  
•
•
Typical Pulsed CW performance, 2690 MHz,  
28 V, 10 µs pulse width, 10% duty cycle, class AB,  
Doherty Configuration  
17  
16  
15  
14  
13  
12  
60  
50  
40  
30  
20  
10  
Gain  
- Output power at P  
- Efficiency = 50%  
- Gain = 15 dB  
= 50 W  
1dB  
Typical two-carrier WCDMA performance,  
2690 MHz, 28 V, 8 dB PAR @ 0.01% CCDF,  
Doherty Configuration  
- Output power = 5 W  
- Efficiency = 40%  
Efficiency  
- Gain = 15.7 dB  
- IMD = –30 dBc  
•
•
Capable of handling 10:1 VSWR @28 V, 50 W  
(CW) output power  
pxac260602fc_g1  
27 29 31 33 35 37 39 41 43 45 47  
Output Power (dBm)  
Integrated ESD protection : Human Body Model,  
Class 1B (per JESD22-A114)  
•
•
Low thermal resistance  
Pb-free and RoHS compliant  
RF Characteristics  
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)  
= 28 V, I = 85 mA, P = 5 W avg, V = V at 300 mA -1.0V, ƒ = 2620 – 2690 MHz, 3GPP signal, channel  
V
DD  
DQ  
OUT  
GS(PK)  
GS  
bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF  
Characteristic  
Symbol  
Min  
14  
Typ  
15.7  
39  
Max  
—
Unit  
dB  
Linear Gain  
G
ps  
Drain Efficiency  
hD  
35  
—
%
Adjacent Channel Power Ratio  
ACPR  
—
–31  
–28  
dBc  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 8  
Rev. 02.4, 2016-06-22  
PXAC260602FC  
DC Characteristics (each side)  
Characteristic  
Conditions  
Symbol  
Min  
65  
—
Typ  
—
Max  
—
Unit  
V
Drain-Source Breakdown Voltage  
Drain Leakage Current  
V
GS  
= 0 V, I = 10 mA  
V(  
BR)DSS  
DS  
V
= 28 V, V = 0 V  
I
I
—
0.1  
1.0  
—
µA  
µA  
µA  
W
DS  
DS  
GS  
DSS  
DSS  
V
= 63 V, V = 0 V  
—
—
GS  
Gate Leakage Current  
V
GS  
= 10 V, I = 0 V  
I
—
—
DS  
GSS  
On-State Resistance (main)  
On-State Resistance (peak)  
Operating Gate Voltage (main)  
Operating Gate Voltage (peak)  
V
GS  
= 10 V, V = 0.1 V  
R
R
—
0.8  
0.22  
2.75  
2.7  
—
DS  
DS(on)  
DS(on)  
V
GS  
= 10 V, V = 0.1 V  
—
—
W
DS  
V
= 28 V, I  
= 28 V, I  
= 85 mA  
V
GS  
2.5  
2.3  
3.0  
3.1  
V
DS  
DS  
DQ  
DQ  
V
= 300 mA  
V
GS  
V
Maximum Ratings  
Parameter  
Symbol  
Value  
65  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Operating Voltage  
V
DSS  
V
–6 to +10  
0 to +32  
225  
V
GS  
DD  
V
V
Junction Temperature  
Storage Temperature Range  
T
°C  
J
T
STG  
–65 to +150  
4.1  
°C  
Thermal Resistance (main, T  
= 70°C, 5 W CW)  
R
°C/W  
°C/W  
CASE  
qJC  
qJC  
Thermal Resistance (doherty, T  
= 70°C, 20 W CW)  
R
2.0  
CASE  
Ordering Information  
Type and Version  
Order Code  
Package Description  
H-37248-4, earless flange  
H-37248-4, earless flange  
Shipping  
PXAC260602FC V1 R0  
PXAC260602FC V1 R250  
PXAC260602FCV1R0XTMA1  
PXAC260602FC V1R250XTMA1  
Tape & Reel, 50 pcs  
Tape & Reel, 250 pcs  
Data Sheet  
2 of 8  
Rev. 02.4, 2016-06-22  
PXAC260602FC  
Typical Performance (data taken in a production test fixture)  
Two-carrier WCDMA Drive-up  
Two-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 85 mA, VGS = 2.62 V,  
ƒ = 2690 MHz, 3GPP WCDMA signal,  
PAR = 8 dB, 10 MHz carrier spacing,  
BW 3.84 MHz  
VDD = 28 V, IDQ = 85 mA, VGS = 2.62V,  
3GPP WCDMA signal, PAR = 8 dB,  
10 MHz carrier spacing, BW 3.84 MHz  
2620 IMDL  
2655 IMDL  
2690 IMDL  
2620 IMDU  
2655 IMDU  
2690 IMDU  
-15  
-20  
-25  
-30  
-35  
-40  
-10  
-20  
-30  
-40  
-50  
-60  
60  
50  
40  
30  
20  
10  
IMD Low  
IMD Up  
ACPR  
Efficiency  
pxac260602fc_g2  
pxac260602fc_g3  
27 29 31 33 35 37 39 41 43 45 47  
Output Power (dBm)  
27 29 31 33 35 37 39 41 43 45 47  
Output Power (dBm)  
CW Performance  
at various VDD  
IDQ = 85 mA, ƒ = 2690 MHz  
CW Performance  
VDD = 28 V, IDQ = 85 mA  
17.5  
16.5  
15.5  
14.5  
13.5  
12.5  
11.5  
70  
60  
50  
40  
30  
20  
10  
17.5  
16.5  
15.5  
14.5  
13.5  
12.5  
11.5  
70  
60  
50  
40  
30  
20  
10  
Gain  
Efficiency  
Vdd = 24V Gain  
Vdd = 28V Gain  
Vdd = 32V Gain  
Vdd = 24V Eff.  
Vdd = 28V Eff.  
Vdd = 32V Eff.  
pxac260602fc_g5  
2620 MHz  
2655 MHz  
2690 MHz  
pxac260602fc_g4  
27 29 31 33 35 37 39 41 43 45 47 49  
Output Power (dBm)  
27 29 31 33 35 37 39 41 43 45 47 49  
Output Power (dBm)  
Data Sheet  
3 of 8  
Rev. 02.4, 2016-06-22  
PXAC260602FC  
Typical Performance (cont.)  
Small Signal CW Performance  
Gain & Input Return Loss  
VDD = 28 V, IDQ = 85 mA  
17.5  
16.5  
15.5  
14.5  
13.5  
0
Gain  
-5  
-10  
-15  
-20  
IRL  
pxac260602fc_g6  
2500 2550 2600 2650 2700 2750 2800  
Frequency (MHz)  
Load Pull Performance  
Main Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, 80 mA  
P
1dB  
Max Output Power  
Max PAE  
Zs  
[W]  
Freq  
[MHz]  
Zl  
[W]  
Gain  
[dB]  
P
P
PAE  
[%]  
Zl  
[W]  
Gain  
[dB]  
P
P
OUT  
PAE  
[%]  
OUT  
OUT  
OUT  
[dBm]  
42.84  
43.15  
42.76  
[W]  
19.2  
20.6  
18.9  
[dBm]  
41.49  
42.24  
41.73  
[W]  
14.1  
16.7  
14.9  
2490  
2620  
2690  
9.0 – j33  
25 – j47  
35 – j52  
12.8 – j9.5  
13.9 – j10.6  
12.7 – j13.0  
19.2  
18.8  
18.6  
54.2  
58.7  
55.4  
5.8 – j4.4  
8.9 – j6.8  
6.8 – j9.2  
21.9  
20.4  
20.6  
68.7  
66.4  
65.6  
Peak Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, 250 mA  
P
1dB  
Max Output Power  
Max PAE  
Zs  
[W]  
Freq  
[MHz]  
Zl  
[W]  
Gain  
[dB]  
P
P
[W]  
PAE  
[%]  
Zl  
[W]  
Gain  
[dB]  
P
P
PAE  
[%]  
OUT  
OUT  
OUT  
OUT  
[W]  
[dBm]  
48.44  
48.28  
48.11  
[dBm]  
46.59  
46.96  
46.30  
2490  
2620  
2690  
4.1 – j13.1  
6.5 – j14.8  
9.0 – j17.8  
3.7 – j5.2  
3.7 – j6.5  
3.7 – j6.1  
16.7  
17  
70  
56.0  
55.4  
56.2  
6.2 – j1.3  
5.9 – j3.7  
5.7 – j2.4  
18.9  
19.1  
20.9  
46  
50  
43  
63.4  
63.1  
64.6  
67  
17.6  
65  
Data Sheet  
4 of 8  
Rev. 02.4, 2016-06-22  
PXAC260602FC  
Reference Circuit , 2620 – 2690 MHz  
PXAC260602FC_OUT_02_D (105)  
RO4350, .020  
(61)  
RO4350, .020  
C104  
VG1  
VDD  
C205  
C103  
C202  
C105  
R101  
C207  
R102  
C204  
S1  
C201  
RF_OUT  
RF_IN  
C106  
C108  
R104  
R103  
C101  
C107  
VG2  
C208  
C203  
C206  
C102  
VDD  
PXAC260602FC_IN_02_D  
p
x a c 2 6 0 6 0 2 f c _ C D _ 1 1 - 2 7 - 2 0 1 3  
Reference circuit assembly diagram (not to scale)  
Data Sheet  
5 of 8  
Rev. 02.4, 2016-06-22  
PXAC260602FC  
Reference Circuit (cont.)  
Reference Circuit Assembly  
DUT  
PXAC260602FC V1  
Test Fixture Part No.  
PCB  
LTA/PXAC260602FC V1  
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 2620 – 2690 MHz  
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower  
Components Information  
Component  
Input  
Description  
Suggested Manufacturer  
P/N  
C101, C103, C106,  
C108  
Capacitor, 18 pF  
ATC  
ATC800A180JT250T  
C102, C104  
C105, C107  
R101, R103  
R102  
Capacitor, 10 µF  
Capacitor, 10 µF  
Resistor, 10 W  
Panasonic Electronic Components  
Taiyo Yuden  
EEE-HB1H100AP  
UMK325C7106MM-T  
ERJ-3GEYJ100V  
C16A5024  
Panasonic Electronic Components  
Anaren  
Resistor, 50 W  
R104  
Resistor, 20 W  
Panasonic Electronic Components  
Anaren  
ERJ-8GEYJ200V  
X3C25P1-05S  
S1  
Directional Coupler, 5dB  
Output  
C201, C202, C204,  
C208  
Capacitor, 18 pF  
ATC  
ATC800A180JT250T  
C203, C207  
C205, C206  
Capacitor, 100 µF  
Capacitor, 10 µF  
Panasonic Electronic Components  
Taiyo Yuden  
EEE-FP1V101AP  
UMK325C7106MM-T  
Pinout Diagram (top view)  
S
Peak  
D1  
Main  
Pin  
D1  
D2  
G1  
G2  
S
Description  
Drain device 1 (Peak)  
Drain device 2 (Main)  
Gate device 1 (Peak)  
Gate device 2 (Main)  
Source (flange)  
D2  
H-37248-4__do_pd_10-10-2012  
G1  
G2  
Lead connections for PXAC260602FC  
Data Sheet  
6 of 8  
Rev. 02.4, 2016-06-22  
PXAC260602FC  
Package Outline Specifications  
Package H-37248-4  
(8.89  
[.350])  
(5.08  
[.200])  
2X 45° X 2.72  
[45° X .107]  
C
L
+0.13  
-0.38  
4X R0.76  
2X 4.83±0.51  
[.190±0.020]  
D1  
D2  
+0.005  
-0.015  
R.030  
[
]
FLANGE 9.78  
[.385]  
LID 9.40  
[.370]  
19.43±0.51  
[.765±0.020]  
C
L
G1  
G2  
4X 3.81  
[.150]  
2X 12.70  
[.500]  
SPH 1.57  
[.062]  
19.81±0.20  
[.780±0.008]  
1.02  
[.040]  
H-37248-4_po_02_01-09-2013  
3
3.76±0.25  
[.148±0.010]  
C
L
20.57  
[.810]  
S
Diagram Notes—unless otherwise specified:  
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.  
2. Primary dimensions are mm. Alternate dimensions are inches.  
3. All tolerances 0.127 [.005] unless specified otherwise.  
4. Pins: D1, D2 – drains; G1, G2 – gates; S – source.  
5. Lead thickness: 0.10 + 0.076/–0.025 mm [0.004+0.003/–0.001 inch].  
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].  
Find the latest and most complete information about products and packaging at the Infineon Internet page  
http://www.infineon.com/rfpower  
Data Sheet  
7 of 8  
Rev. 02.4, 2016-06-22  
PXAC260602FC V1  
Revision History  
Revision  
Date  
Data Sheet Type  
Advance  
Page  
All  
Subjects (major changes since last revision)  
Data Sheet reflects advance specification for product development  
Data Sheet reflects released product specification  
Revised ESD classification  
01  
2013-10-14  
2013-12-02  
2013-12-12  
2014-05-14  
02  
Production  
Production  
Production  
All  
02.1  
02.2  
1
2
6
Revised juntion temperature in Maximum Ratings table  
Corrected naming typo in Pinout Diagram  
02.3  
02.4  
2015-12-23  
2016-06-22  
Production  
Production  
2
2
DC Characteristic table  
Updated ordering information  
We Listen toYour Comments  
Any information within this document that you feel is wrong, unclear or missing at all?  
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to:  
highpowerRF@infineon.com  
To request other information, contact us at:  
+1 877 465 3667 (1-877-GO-LDMOS) USA  
or +1 408 776 0600 International  
Edition 2016-06-22  
Published by  
Infineon Technologies AG  
85579 Neubiberg, Germany  
© 2015 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.  
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the  
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,  
including without limitation, warranties of non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact the nearest  
Infineon Technologies Office (www.infineon.com/rfpower).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in question,  
please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-  
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device  
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be  
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be endangered.  
Data Sheet  
8 of 8  
Rev. 02.4, 2016-06-22  
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