PXAC261002FC
Thermally-Enhanced High Power RF LDMOS FET
100 W, 28 V, 2490 – 2690 MHz
Description
The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric
design intended for use in multi-standard cellular power amplifier
applications in the 2496 to 2690 MHz frequency band. Features
include dual-path design, high gain and a thermally-enhanced pack-
age with earless flanges. Manufactured with Infineon's advanced
PXAC261002FC
Package H-37248-4
LDMOS process, this device provides excellent thermal performance
and superior reliability.
Features
Two-carrier WCDMA Drive-up
VDD = 26 V, IDQ = 210 mA, VGS1 = 2.62 V,
ƒ = 2590 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz, Doherty Fixture
•
•
Broadband internal input and output matching
Asymmetric design
- Main: P1dB = 40 W Typ
- Peak: P1dB = 70 W Typ
17
16
15
14
13
12
11
60
50
40
30
20
10
0
•
Typical Pulsed CW performance, 2590 MHz, 26 V,
160 µs, 10% duty cycle, Doherty Configuration
- Output power at P
- Output power at P
= 46.5 dBm
= 50.1 dBm
Gain
1dB
3dB
•
•
Capable of handling 10:1 VSWR @28 V, 100 W
(CW) output power
Integrated ESD protection : Human Body Model,
Class 1C (per JESD22-A114)
•
•
Low thermal resistance
Efficiency
Pb-free and RoHS compliant
c261002fc_g1
29
33
37
41
45
49
Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon production Doherty test fixture)
V
DD
= 26 V, I
= 210 mA, P
= 18 W avg, V
= 1.4 V, ƒ = 2550 MHz, ƒ = 2590 MHz, 3GPP signal, 3.84 MHz channel
DQ
OUT
GS2
1
2
bandwidth, 8 dB peak/average @ 0.01% CCDF
Characteristic
Gain
Symbol
Min
14.1
46
Typ
15.1
49
Max
—
Unit
dB
G
ps
Drain Efficiency
ηD
—
%
Intermodulation Distortion
IMD
—
–22
—
–21
—
dBc
dB
Output PAR at 0.01% probability on CCDF
OPAR
7.5
(one-carrier WCDMA, 2585 MHz, 10 dB PAR)
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 8
Rev. 03.3, 2016-06-15
