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PXAC243502FVV1R250

型号：

PXAC243502FVV1R250

品牌：

INFINEON[ Infineon ]

页数：

10 页

PDF大小：

1371 K

下载PDF手册
PXAC243502FV  
High Power RF LDMOS Field Effect Transistor  
350 W, 28 V, 2300 – 2400 MHz  
Description  
The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET de-  
signed for use in power amplifier applications in the 2300 MHz to  
2400 MHz frequency band. Features include an asymmetric design  
with high gain and a thermally-enhanced package with earless flange.  
Manufactured with Infineon's advanced LDMOS process, this device  
provides excellent thermal performance and superior reliability.  
PXAC243502FV  
Package H-37275-4  
Features  
Single-carrier WCDMA  
Broadband Performance  
VDD = 28 V, IDQ = 850 mA, POUT = 48.3 dBm,  
3GPP WCDMA signal, 10 dB PAR  
•ꢀ Asymmetric design  
- Main: 150 W P1dB  
- Peak: 200 W P1dB  
•ꢀ Broadband internal matching  
20  
55  
•ꢀ CW performance at 2350 MHz, 28 V  
Efficiency  
- Ouput power = 250 W P  
- Efficiency = 46%  
- Gain = 16 dB  
1dB  
18  
45  
16  
35  
•ꢀ Integrated ESD protection  
Gain  
•ꢀ Human Body Model Class 2 (per ANSI/ESDA/  
14  
25  
JEDEC JS-001)  
•ꢀ Low thermal resistance  
12  
15  
•ꢀ Pb-free and RoHS-compliant  
c243502fv-gr3  
10  
2150  
5
2250  
2350  
2450  
2550  
Frequency (MHz)  
RF Characteristics  
Single-carrier WCDMA Specifications (tested in Infineon production test fixture in Doherty configuration)  
= 28 V, V = 1.0 V, I = 850 mA, P = 68 W avg, ƒ = 2400 MHz  
V
DD  
GS(peak)  
DQ  
OUT  
3GPP WCDMA signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% CCDF  
Characteristic  
Gain  
Symbol  
Min  
14.0  
42  
Typ  
15.0  
45  
Max  
—
Unit  
dB  
G
ps  
Drain Efficiency  
Adjacent Channel Power Ratio  
hD  
—
%
ACPR  
—
–32  
–26  
dBc  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 10  
Rev. 03.2, 2016-06-22  
PXAC243502FV  
DC Characteristics  
Characteristic  
Conditions  
Symbol  
Min  
65  
—
Typ  
—
Max  
—
Unit  
V
Drain-Source Breakdown Voltage  
Drain Leakage Current  
V
GS  
= 0 V, I = 10 mA  
V(  
BR)DSS  
DS  
V
V
= 28 V, V = 0 V  
I
I
—
1
µA  
µA  
µA  
W
DS  
DS  
GS  
DSS  
DSS  
= 63 V, V = 0 V  
—
—
10  
1
GS  
Gate Leakage Current  
V
GS  
= 10 V, V = 0 V  
I
—
—
DS  
GSS  
On-State Resistance  
main  
peak  
main  
peak  
V
GS  
= 10 V, V = 0.1 V  
R
—
0.088  
0.088  
2.6  
—
DS  
DS(on)  
DS(on)  
V
GS  
= 10 V, V = 0.1 V  
R
—
—
W
DS  
Operating Gate Voltage  
V
= 28 V, I  
= 28 V, I  
= 850 mA  
= 0 mA  
V
GS  
2.3  
0.8  
3.0  
1.6  
V
DS  
DS  
DQ  
DQ  
V
V
GS  
1.2  
V
Maximum Ratings  
Parameter  
Symbol  
Value  
65  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Operating Voltage  
Junction Temperature  
V
DSS  
V
–6 to +10  
0 to +32  
225  
V
GS  
DD  
V
V
T
J
°C  
Storage Temperature Range  
Thermal Resistance (T  
T
–65 to +150  
0.22  
°C  
STG  
= 70°C, 250 W CW)  
R
°C/W  
CASE  
JC  
q
Ordering Information  
Type and Version  
Order Code  
Package and Description  
H-37275-4  
Shipping  
PXAC243502FV V1 R0  
PXAC243502FV V1 R250  
PXAC243502FVV1R0XTMA1  
PXAC243502FVV1R250XTMA1  
Tape & Reel, 50 pcs  
Tape & Reel, 250 pcs  
H-37275-4  
Data Sheet  
2 of 10  
Rev. 03.2, 2016-06-22  
PXAC243502FV  
Typical RF Performance (data taken in production test fixture)  
Single-carrier WCDMA Drive-up  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 850 mA, ƒ = 2300 MHz  
VDD = 28 V, IDQ = 850 mA, ƒ = 2350 MHz  
3GPP WCDMA signal,  
3GPP WCDMA signal,  
10 dB PAR, 3.84 MHz BW  
10 dB PAR, 3.84 MHz BW  
24  
20  
16  
12  
8
60  
40  
20  
0
24  
20  
16  
12  
8
60  
40  
20  
0
Efficiency  
Efficiency  
Gain  
Gain  
-20  
-40  
-60  
-20  
-40  
-60  
PAR @ 0.01% CCDF  
PAR @ 0.01% CCDF  
4
4
c243502fv-gr1b  
c243502fv-gr1a  
0
0
27  
32  
37  
42  
47  
52  
27  
32  
37  
42  
47  
52  
Average Output Power (dBm)  
Average Output Power (dBm)  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 850 mA, ƒ = 2400 MHz  
Single-carrier WCDMA 3GPP Drive-up  
VDD = 28 V, IDQ = 850 mA,  
ƒ = 2300 to 2400 MHz. 3GPP WCDMA signal,  
3GPP WCDMA signal,  
10 dB PAR, 3.84 MHz BW  
10 dB PAR, 3.84 MHz BW  
2300 ACPL  
2400 ACPL  
2350 ACPU  
2300 EFF  
2350 ACPL  
2300 ACPU  
2400 ACPU  
2350 EFF  
24  
20  
16  
12  
8
60  
40  
20  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
60  
50  
40  
30  
20  
10  
0
Efficiency  
2400 EFF  
Gain  
ACP up, ACP low  
-20  
-40  
-60  
PAR @ 0.01% CCDF  
4
Efficiency  
37 42  
Average Output Power (dBm)  
c243502fv-gr2a  
0
c243502fv-gr1c  
27  
32  
37  
42  
47  
52  
27  
32  
47  
52  
Average Output Power (dBm)  
Data Sheet  
3 of 10  
Rev. 03.2, 2016-06-22  
PXAC243502FV  
Typical RF Performance (cont.)  
Single-carrier WCDMA  
CW Performance  
VDD = 28 V, IDQ = 850 mA  
Broadband Performance  
VDD = 28 V, IDQ = 850 mA, POUT = 48.3 dBm,  
3GPP WCDMA signal, 10 dB PAR  
-10  
-5  
20  
15  
10  
5
60  
50  
40  
30  
20  
10  
0
Efficiency  
Input Return Loss  
-15  
-10  
-15  
-20  
-25  
-30  
-35  
-20  
-25  
-30  
Gain  
ACP up  
-35  
2400 MHz  
2350 MHz  
2300 MHz  
-40  
2150  
c243502fv-gr4  
c243502fv-gr5  
2250  
2350  
2450  
2550  
29  
33  
37  
41  
45  
49  
53  
57  
Frequency (MHz)  
Output Power (dBm)  
Pulse CW Performance  
at selected VDD  
IDQ = 850 mA, ƒ = 2300 MHz  
Pulse CW Performance  
at selected VDD  
IDQ = 850 mA, ƒ = 2350 MHz  
20  
60  
40  
20  
0
20  
15  
10  
5
60  
40  
20  
0
Efficiency  
Efficiency  
15  
10  
5
Gain  
Gain  
VDD = 24 V  
VDD = 24 V  
V
V
DD = 28 V  
DD = 32 V  
V
V
DD = 28 V  
DD = 32 V  
c243502fv-gr6a  
c243502fv-gr6b  
27  
35  
43  
51  
59  
27  
35  
43  
51  
59  
Output Power (dBm)  
Output Power (dBm)  
Data Sheet  
4 of 10  
Rev. 03.2, 2016-06-22  
PXAC243502FV  
Typical RF Performance (cont.)  
Small Signal CW  
Gain & Input Return Loss  
VDD = 28 V, IDQ = 850 mA  
Pulse CW Performance  
at selected VDD  
IDQ = 850 mA, ƒ = 2400 MHz  
20  
60  
40  
20  
0
18  
17  
16  
15  
14  
13  
12  
11  
10  
-8  
Efficiency  
Input Return Loss  
-9  
Gain  
-10  
-11  
-12  
-13  
-14  
-15  
-16  
15  
10  
5
Gain  
VDD = 24 V  
DD = 28 V  
DD = 32 V  
V
V
c243502fv-gr6c  
c243502fv-gr7  
27  
35  
43  
51  
59  
2150  
2250  
2350  
2450  
2550  
Output Power (dBm)  
Frequency (MHz)  
See next page for Load Pull Performance  
Data Sheet  
5 of 10  
Rev. 03.2, 2016-06-22  
PXAC243502FV  
Load Pull Performance  
Main Side – Pulsed CW signal: 160 µsec, 10% duty cycle; V  
= 28 V, I  
= 850 mA  
DQ  
DD  
P
1dB  
Class AB  
Max Output Power  
Max PAE  
Freq  
[MHz]  
Zs  
[W]  
Zl  
[W]  
Gain  
[dB]  
P
[dBm]  
P
OUT  
[W]  
PAE  
[%]  
Zl  
[W]  
Gain  
[dB]  
P
[dBm]  
P
OUT  
[W]  
PAE  
[%]  
OUT  
OUT  
2300  
2350  
2400  
6.82 – j9.56  
8.29 – j9.42  
10.06 – j7.29  
1.28 – j3.64  
1.25 – j3.62  
1.30 – j3.61  
16.16  
16.44  
16.46  
52.39  
52.20  
51.82  
173.38  
165.96  
152.05  
49.67  
49.05  
45.61  
2.37 – j2.28  
1.97 – j2.50  
1.99 – j2.24  
18.79  
18.63  
18.90  
50.39  
50.66  
50.15  
109.47  
116.49  
103.49  
59.01  
57.37  
54.87  
Peak Side – Pulsed CW signal: 160 µsec, 10% duty cycle; V  
= 28 V, I  
= 1350 mA  
DQ  
DD  
P
1dB  
Class AB  
Max Output Power  
Max PAE  
Freq  
[MHz]  
Zs  
[W]  
Zl  
[W]  
Gain  
[dB]  
P
P
PAE  
[%]  
Zl  
[W]  
Gain  
[dB]  
P
P
OUT  
[W]  
PAE  
[%]  
OUT  
OUT  
[W]  
OUT  
[dBm]  
53.03  
52.77  
52.61  
[dBm]  
51.17  
51.31  
51.45  
2300  
2350  
2400  
3.27 – j6.01  
4.08 – j6.00  
5.14 – j6.25  
2.09 – j3.76  
2.03 – j3.86  
1.90 – j3.64  
17.42  
17.54  
18.08  
200.91  
189.23  
182.39  
48.19  
45.76  
45.91  
1.43 – j2.25  
1.33 – j2.63  
1.49 – j2.71  
19.79  
19.82  
20.01  
130.98  
135.33  
139.57  
55.51  
53.60  
51.41  
Peak Side – Pulsed CW signal: 160 µsec, 10% duty cycle; V  
= 28 V, V  
= 1.5 V  
DD  
GS(peak)  
P
1dB  
Class C  
Max Output Power  
Max PAE  
Freq  
[MHz]  
Zs  
[W]  
Zl  
[W]  
Gain  
[dB]  
P
P
PAE  
[%]  
Zl  
[W]  
Gain  
[dB]  
P
P
OUT  
[W]  
PAE  
[%]  
OUT  
OUT  
[W]  
OUT  
[dBm]  
53.71  
53.57  
53.43  
[dBm]  
52.51  
51.75  
51.79  
2300  
2350  
2400  
3.27 – j6.01  
4.08 – j6.00  
5.14 – j6.25  
1.67 – j4.02  
1.62 – j4.07  
1.96 – j4.15  
12.90  
13.16  
13.39  
234.96  
227.51  
220.29  
50.13  
50.21  
48.66  
1.42 – j2.66  
1.37 – j2.69  
1.47 – j2.71  
14.27  
14.53  
14.74  
178.28  
149.62  
150.83  
59.99  
58.18  
56.64  
Reference Circuit, 2300 to 2400 MHz  
DUT  
PXAC243502FV V1  
LTA/PXAC243502FV V1  
Test Fixture Part No.  
PCB  
Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66  
Find Gerber files for this reference fixture on the Infineon Web site at (http://www.infineon.com/rfpower)  
Data Sheet  
6 of 10  
Rev. 03.2, 2016-06-22  
PXAC243502FV  
Reference Circuit (cont.)  
RO4350, 20 MIL (61)  
RO4350, 20 MIL (61)  
VDD  
C103  
C107  
R103  
VGG  
C201 C206 C213  
C104 C106  
C207  
C205  
C212  
R102  
C204  
C202  
C209  
S1  
RF_OUT  
RF_IN  
C101  
C102  
VDD  
R101  
C208  
VGG  
C203 C211 C210  
C105  
PXAC243502FV_IN_01  
PXAC243502FV_OUT_01  
p x f c 2 4 3 5 0 2 f v _ C D _ 1 - 1 5 - 1 5  
Reference circuit assembly diagram (not to scale)  
Component Information  
Component  
Description  
Manufacturer  
Part Number  
Input  
C101, C102, C103, C104  
Capacitor, 15 pF  
ATC  
ATC600F150JT250XT  
UMK325C7106MM-T  
ATC600F0R5BT250XT  
ERJ-3GEYJ100V  
C16A50Z4  
C105, C107  
C106  
Capacitor, 10 µF  
Taiyo Yuden  
Capacitor, 0.5 pF  
Chip resistor, 10 ohms  
Chip resistor, 50 ohms  
Hybrid coupler  
ATC  
R101, R103  
R102  
Panasonic Electronic Components  
Anaren  
Anaren  
S1  
X3C25P1-02S  
(table cont. next page)  
Data Sheet  
7 of 10  
Rev. 03.2, 2016-06-22  
PXAC243502FV  
Reference Circuit (cont.)  
Component Information (cont.)  
Component  
Output  
C201, C203  
C207  
Description  
Manufacturer  
Part Number  
Capacitor, 15 pF  
Capacitor, 0.8 pF  
Capacitor, 3 pF  
Capacitor, 3.9 pF  
ATC  
ATC600F150JT250XT  
ATC600F0R8BT250XT  
ATC600F3R0BT250XT  
ATC600F3R9BT250XT  
UMK325C7106MM-T  
ATC  
C204  
ATC  
C202  
ATC  
C205, C206, C209, C210, Capacitor, 10 µF  
C211, C213  
Taiyo Yuden  
C212, C208  
Capacitor, 220 µF  
Panasonic Electronic Components  
EEE-FP1V221AP  
Pinout Diagram (top view)  
Main  
Peak  
D1  
D2  
Pin  
D1  
D2  
G1  
G2  
S
Description  
Drain device 1 (main)  
Drain device 2 (peak)  
Gate device 1 (main)  
Gate device 2 (peak)  
Source (flange)  
S
H - 3 7 2 7 5 - 4 _ f l_ p d _ 0 1 _ 0 8 - 1 3 - 2 0 1 4  
G1  
G2  
Data Sheet  
8 of 10  
Rev. 03.2, 2016-06-22  
PXAC243502FV  
Package Outline Specifications  
Package H-37275-4  
13.72  
[.540]  
2X 45° X 1.19  
[45° X .047]  
2x (2.03  
[.080])  
C
L
3.226±0.508  
[.127±.020]  
D1  
D2  
10.160  
[.400]  
C
L
9.14  
[.360]  
(16.61  
[.654])  
G1  
G2  
C
C
L
L
+0.38  
4X R0.51  
–0.13  
4X 11.68  
[.460]  
+.015  
R.020  
–.005  
[
]
24.40  
[1.000]  
31.242±0.28  
[1.230±.011]  
2.13  
[.084] SPH  
+0.25  
4.57  
–0.13  
+.010  
.180  
C
-.005  
[
]
L
1.63  
[.064]  
C
66065-A0004-C250-01-0027 H-37275-4-X  
37275-4-r02_PO_12-22-2014  
h
-
32.26  
[1.270]  
S
Diagram Notes—unless otherwise specified:  
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.  
2. Primary dimensions are mm. Alternate dimensions are inches.  
3. All tolerances 0.13 [0.005].  
4. Pins: D1, D2 – drain; G1, G2 – gate; S (flange) – source.  
5. Lead thickness: 0.127 0.001 [.005 0.002].  
6. Gold plating thickness: 1.1 0.38 micron [45 15 microinch].  
Find the latest and most complete information about products and packaging at the Infineon Internet page  
http://www.infineon.com/rfpower  
Data Sheet  
9 of 10  
Rev. 03.2, 2016-06-22  
PXAC243502FV V1  
Revision History  
Revision Date  
Data Sheet  
Advance  
Page  
all  
Subjects (major changes at each revision)  
01  
02  
2013-03-05  
2014-12-24  
Proposed specification for new product development.  
Producton  
all  
Includes released-product specifications, including performance graphs and load  
pull data.  
03  
2015-01-16  
2015-04-13  
Production  
Production  
6 – 8  
1, 2  
Include reference circuit information.  
Update RF and DC tables. Removed 1C WCDMA performance from Features, added HBM  
rating. Updated ordering table.  
03.1  
Updated ordering information  
03.2  
2016-06-22  
Production  
2
We Listen toYour Comments  
Any information within this document that you feel is wrong, unclear or missing at all?  
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to:  
(highpowerRF@infineon.com)  
To request other information, contact us at:  
+1 877 465 3667 (1-877-GO-LDMOS) USA  
or +1 408 776 0600 International  
Edition 2016-06-22  
Published by  
Infineon Technologies AG  
85579 Neubiberg, Germany  
© 2013 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.  
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the  
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,  
including without limitation, warranties of non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact the nearest  
Infineon Technologies Office (www.infineon.com/rfpower).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in question,  
please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of  
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support  
device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended  
to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be endangered.  
Data Sheet  
10 of 10  
Rev. 03.2, 2016-06-22  
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 		PXA270 为PXA270平台的存储解决方案[ Storage solution for PXA270 platform ] 2 页

ACTEL

 		PXA300 为Marvell公司的PXA300 / 310平台存储解决方案[ Storage Solution for Marvell’s PXA300/310 Platform ] 2 页

MARVELL

 		PXA300 可扩展性能高达624兆赫的高性价比和高能效的智能手机，嵌入式解决方案，以及手持设备[ Scalable Performance up to 624 MHz for Cost-Effective and Power-Efficient Smartphones, Embedded Solutions, and Handheld Devices ] 4 页

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