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IX2204NETR

型号：

IX2204NETR

品牌：

IXYS[ IXYS CORPORATION ]

页数：

10 页

PDF大小：

220 K

下载PDF手册
IX2204  
Dual Low Side  
IGBT Gate Driver  
INTEGRATED  
C
IRCUITS  
D
IVISION  
Features  
Description  
• High Output Current: 2A Source/4A Sink  
• Wide Operating Voltage Range: -10V to +26V  
• Negative Gate Drive Capability  
• Desaturation Detection Circuit  
• Separate Source and Sink Outputs  
• Programmable Blanking and Output Tristate  
• TTL Compatible Inputs  
• -40°C to +125°C Extended Operating Temperature  
Range  
• Under-Voltage Lockout Circuitry  
• Fault Status Output  
The IX2204 is a dual high current gate driver  
specifically designed to drive the gates of high current  
IGBTs. The IX2204 provides two high current outputs  
capable of sourcing 2A and sinking 4A. The outputs  
can be paralleled for IGBT gates that require higher  
drive current. The outputs have a wide operating  
voltage range, and are able to provide a negative gate  
drive voltage to ensure the turn-off of high power  
IGBTs. A desaturation detection circuit protects the  
power IGBT during a short circuit. The IX2204 has a  
programmable two-level turn-off feature that protects  
the device against excessive voltages when the IGBT  
is being turned off due to an over-current situation.  
Applications  
• Efficient IGBT Switching  
• Motor Controls  
• Switch Mode Power Supplies  
The IX2204 has under voltage lockout circuitry and a  
fault status output, and is available in a 16-lead  
thermally enhanced SOIC package.  
Ordering Information  
Part  
Description  
IX2204NE  
16-Pin SOIC in Tubes (50/Tube)  
IX2204NETR 16-Pin SOIC in Tape & Reel (2000/Reel)  
IX2204 Functional Block Diagram  
UVLO  
VHA  
INA  
OUTHA  
OUTLA  
A Channel  
Level Shift  
Control  
Logic  
INB  
VLA  
VHB  
MODE  
BLANK  
TRISTATE  
DESAT  
1.4V  
OUTHB  
OUTLB  
B Channel  
Level Shift  
FAULT  
GND  
VLB  
DS-IX2204-R03  
www.ixysic.com  
1
IX2204  
INTEGRATED  
C
IRCUITS  
D
IVISION  
1. Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
1.1 Package Pinout: 16-Pin SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
1.2 Pin Description: 16-Pin SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
1.3 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
1.4 Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
1.5 DC Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
1.6 AC Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
1.7 Thermal Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
1.8 AC Input/Output Timing Diagram (MODE=0V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
1.9 AC Fault Timing Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
2. Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3. Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
3.1 Input. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
3.2 Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
3.3 Desaturation Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
3.4 Under-Voltage Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
3.5 Fault Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
3.6 Outputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
4. Application Drawings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
4.1 Parallel-Mode IGBT Drive with Desaturation Detection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
4.2 Direct IGBT Drive. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
4.3 Stack-Mode IGBT Drive with Desaturation Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
5. Manufacturing Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
5.1 Moisture Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
5.2 ESD Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
5.3 Soldering Profile. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
5.4 Board Wash . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
5.5 Mechanical Dimensions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
2
www.ixysic.com  
R03  
IX2204  
INTEGRATED  
C
IRCUITS  
D
IVISION  
1 Specifications  
1.1 Package Pinout: 16-Pin SOIC Package  
1.2 Pin Description: 16-Pin SOIC Package  
Pin#  
Name  
Description  
1
2
3
VLA  
VLA - 1  
OUTLA - 2  
OUTHA - 3  
VHA - 4  
DESAT - 5  
TRISTATE - 6  
MODE - 7  
16 - VLB  
Channel A negative supply  
Channel A sinking output  
Channel A sourcing output  
15 - OUTLB  
14 - OUTHB  
13 - VHB  
12 - INB  
11 - INA  
10 - FAULT  
9 - GND  
OUTLA  
OUTHA  
Channel A positive supply & logic  
supply  
4
VHA  
BLANK - 8  
5
6
DESAT  
TRISTATE  
MODE  
BLANK  
GND  
Desaturation comparator input  
Channel A tristate timing  
Mode control  
7
8
Channel A start-up blanking time  
Signal ground  
9
10  
11  
12  
13  
14  
15  
16  
FAULT  
INA  
Fault status output  
Channel A logic input  
Channel B logic input  
Channel B positive Supply  
Channel B sourcing output  
Channel B sinking output  
Channel B negative supply  
INB  
VHB  
OUTHB  
OUTLB  
VLB  
R03  
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3
IX2204  
INTEGRATED  
C
IRCUITS  
D
IVISION  
1.3 Absolute Maximum Ratings  
Parameter  
Symbol  
Minimum  
Maximum  
Units  
1
VHA, VHB  
VLA, VLB  
-
VH Supply Voltage  
-
26  
V
V
VL Supply Voltage  
-10  
-
VHA+0.3  
-2  
Supply Voltage All Other Pins  
Output Sourcing Current  
Output Sinking Current  
Junction Temperature  
Storage Temperature  
GND-0.3  
V
I
-
A
OUTH  
I
-
4
A
OUTL  
T
-55  
-65  
+150  
+150  
°C  
°C  
J
T
STG  
Note 1: VHx-VLx maximum is 26V.  
1.4 Recommended Operating Conditions  
Parameter  
VH Supply Voltage  
Symbol  
Minimum  
Maximum  
Units  
VHA, VHB  
VLA, VLB  
V
V
-
25  
VL Supply Voltage  
-10  
-40  
GND  
+125  
T
Operating Temperature Range  
°C  
A
1.5 DC Electrical Characteristics  
13V < VHA < 25V; 13V<VHB<25V; -40°C<T <125°C.  
A
Parameter  
Power Supply Current  
Conditions  
VHA=18V  
Symbol Minimum Typical Maximum Units  
IVHA  
mA  
V
-
-
-
3.5  
13  
Under-Voltage Lockout Output Enable Threshold  
Under-Voltage Lockout Output Hysteresis  
INA / INB Logic Low Threshold  
INA / INB Logic High Threshold  
INA / INB / MODE Input Current  
DESAT Threshold  
VHA Rising  
UVLO+  
10  
-
-
-
-
-
-
UVLOHYS  
-
0.8  
-
1
-
-
V
VIL  
VIH  
-
-
V
2
V
IIN  
-
-
1
A  
V
VDESAT  
ISRC  
1.26  
-100  
1.4  
-160  
1.54  
-210  
TRISTATE / BLANK Source Current  
FAULT Output  
FAULT Low Voltage  
A  
IFAULT=8mA  
VFAULT  
-
-
0.8  
V
Outputs  
Low Output Voltage  
No Load  
No Load  
VOUTL  
VOUTH  
ROUTH  
ROUTL  
-
-
VL+0.025  
V
V
High Output Voltage  
VH-0.025  
-
-
VH=18V, IOUTH= -100mA  
VH=18V, IOUTL= 100mA  
-
-
2.4  
1.2  
5
2
Output Resistance  
4
www.ixysic.com  
R03  
IX2204  
INTEGRATED  
C
IRCUITS  
D
IVISION  
1.6 AC Electrical Characteristics  
13V < VHA < 25V; -40°C<T <125°C  
A
Parameter  
Conditions  
Symbol Minimum Typical Maximum Units  
OUT Rise Time  
tr  
tf  
-
-
40  
OUT Fall Time  
-
-
-
-
-
-
-
8
70  
70  
7
20  
100  
100  
25  
VH=18V, CLOAD=1nF  
ns  
Delay, IN to OUT Rising  
Delay, IN to OUT Falling  
TDLH  
TDHL  
(twin - twout), CLOAD=0  
(twin - twout), CLOAD=1nF  
CBLANK=0  
IN to OUT Pulse Distortion  
tw  
ns  
ns  
7
25  
-
100  
-
DESAT Blank Time  
tBLANK  
tDELAY1  
tTRISTATE  
tDELAY2  
CBLANK=100pF  
875  
RL=100to GND  
CTRISTATE=0  
Delay Time, DESAT to Output Tristate  
Duration of Tristate OUT  
-
-
-
50  
-
100  
100  
-
ns  
ns  
CTRISTATE=100pF  
VH=18V, CLOAD=1nF  
1000  
Delay Time, TRISTATE high to OUT Low  
-
-
100  
ns  
1.7 Thermal Characteristics  
Parameter  
Symbol  
JA  
Rating  
Units  
Thermal Resistance, Junction to Ambient  
75.4  
°C/W  
1.8 AC Input/Output Timing Diagram (MODE=0V)  
tDHL  
tDLH  
V IH  
IN  
X
X
tw in  
V IL  
tf  
tr  
twout  
OUT  
90%  
50%  
90%  
90%  
50%  
10%  
10%  
10%  
1.9 AC Fault Timing Diagram  
1.4V  
DESAT  
tDELAY1  
tTRISTATE  
VH  
VL  
tDELAY2  
OUT  
R03  
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5
IX2204  
INTEGRATED  
C
IRCUITS  
D
IVISION  
2 Performance Characteristics  
VDESAT Threshold  
vs.Temperature  
Propagation Delay  
vs.Temperature  
Pulse Width Distortion  
vs.Temperature  
1.50  
1.45  
1.40  
1.35  
1.30  
100  
25  
20  
15  
10  
5
80  
TDHL  
60  
TDLH  
0
40  
-5  
-10  
-15  
-20  
-25  
20  
0
-50 -25  
-50 -25  
-50 -25  
0
25  
50  
75 100 125 150  
-50 -25  
0
25  
50  
75 100 125 150  
-50 -25  
0
25  
50  
75 100 125 150  
Temperature (ºC)  
Temperature (ºC)  
Temperature (ºC)  
UVLO+ Threshold  
vs.Temperature  
TRISTATE and BLANK Source Current  
vs.Temperature  
Power Supply Current  
vs.Temperature  
-120  
-130  
-140  
-150  
-160  
-170  
-180  
13.0  
12.5  
12.0  
11.5  
11.0  
10.5  
10.0  
3.0  
2.5  
2.0  
1.5  
1.0  
-50 -25  
0
25  
50  
75 100 125 150  
0
25  
50  
75 100 125 150  
-50 -25  
0
25  
50  
75 100 125 150  
Temperature (ºC)  
Temperature (ºC)  
Temperature (ºC)  
Output Resistance  
vs.Temperature  
(IOUTH=-100mA, IOUTL=100mA)  
Peak Output Current  
vs.Temperature  
(10μs Pulse)  
Output Resistance  
vs.Temperature  
(IOUTH=-2A, IOUTL=4A)  
5
4
3
2
1
0
8
7
6
5
4
3
2
8
7
6
5
4
3
2
1
0
ROUTH  
IOUTL  
ROUTH  
ROUTL  
ROUTL  
IOUTH  
-50 -25  
0
25  
50  
75 100 125 150  
0
25  
50  
75 100 125 150  
-50 -25  
0
25  
50  
75 100 125 150  
Temperature (ºC)  
Temperature (ºC)  
Temperature (ºC)  
6
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R03  
IX2204  
INTEGRATED  
C
IRCUITS  
D
IVISION  
3 Functional Description  
3.1 Input  
This blanking time starts when INA transitions from  
low to high.  
The INA and INB inputs are TTL compatible and must  
be referenced to GND.  
The desaturation two-step turn off is slightly different  
when MODE is connected to VHA for stack-mode  
IGBT drive. When the DESAT voltage exceeds 1.4V,  
OUTHA and OUTLB are turned on, tristating the IGBT.  
3.2 Mode  
The MODE input determines how the desaturation  
protection and Under-Voltage Lock Out (UVLO)  
protection circuitry controls the OUTHA, OUTLA,  
OUTHB and OUTLB outputs. For parallel-mode IGBT  
drive, MODE should be connected to GND (see 4.1).  
For driving IGBTs that require higher gate drive  
current than the IX2204 can provide, the IX2204 can  
be used to control external drive transistors. In this  
stacked configuration, the external drive transistors  
constitute an inverting stage, and MODE should be  
connected to VHA for proper desaturation protection  
and UVLO operation (see 4.3).  
After the t  
time, OUTHA and OUTLB are  
TRISTATE  
turned off, and OUTHB is turned on, which in  
conjunction with the external drive transistor quickly  
turns off the IGBT. When MODE is connected to VHA,  
the blanking time starts when INA transitions from  
high to low.  
The desaturation protection circuit cannot be used  
when the IX2204 is used to drive two separate IGBTs  
(direct IGBT drive, see 4.2). When driving two  
separate IGBTs, the DESAT, TRISTATE, MODE, and  
BLANK pins should all be connected to GND.  
3.3 Desaturation Protection  
3.4 Under-Voltage Protection  
The desaturation protection circuit ensures the  
protection of an external IGBT in the event of an  
over-current situation. When the voltage at DESAT  
exceeds 1.4V (typically) and MODE is connected to  
GND, OUTLA and OUTLB are driven low in a two-step  
process. First OUTLA, OUTHA, OUTLB and OUTHB  
are all turned off (high impedance). Then after a  
The Under Voltage Lock Out (UVLO) circuit protects  
the IGBT from insufficient gate voltage. The UVLO  
circuit monitors the VHA supply voltage. If MODE is  
connected to GND and VHA is below the UVLO+  
threshold, OUTHA and OUTHB are both turned-off  
(high impedance), and both OUTLA and OUTLB are  
both turned on (pulled low). If VHA is below the  
UVLO+ threshold and MODE is connected to VHA,  
OUTHA and OUTHB are both are turned on, and  
OUTLA and OUTLB are both turned off.  
programmable time (t  
), both OUTLA and  
TRISTATE  
OUTLB are turned on (driven low), which quickly turns  
off the IGBT. This two-step action avoids both  
dangerous over-voltages across the IGBT and  
reverse-bias SOA problems, especially during a short  
circuit turn-off. The time that all the outputs are in  
tristate is set by an internal current source and an  
external capacitor (CTRISTATE ) that is connected to  
the TRISTATE pin. The tristate time is approximately:  
Table 2: Output States with VHA < UVLO+  
Mode  
OUTHA  
OUTLA  
OUTHB  
OUTLB  
GND  
VHA  
Z
1
0
Z
Z
1
0
Z
t
= 8750 • C  
TRISTATE  
3.5 Fault Output  
TRISTATE  
The FAULT output is pulled low during a desaturation  
event, or when VHA is below UVLO+.  
The desaturation circuit is disabled for a fixed blanking  
time to avoid detecting a false desaturation event  
during IGBT turn-on, thus allowing enough time for  
IGBT saturation. This blanking time is set by an  
internal current source and an external capacitor,  
3.6 Outputs  
The output stages are able to source 2A, and sink 4A.  
Separated sink and source outputs allow independent  
gate charge and discharge control. For higher gate  
drive applications, the source and sink outputs can be  
paralleled to source 4A, and sink 8A.  
C
. The blanking time is approximately:  
BLK  
t
= 8750 • C  
BLK  
BLK  
R03  
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7
IX2204  
INTEGRATED  
C
IRCUITS  
D
IVISION  
4 Application Drawings  
4.1 Parallel-Mode IGBT Drive with Desaturation Detection  
15V  
-10V  
-10V  
15V  
VLA  
VLB  
OUTLB  
OUTHB  
VHB  
OUTLA  
OUTHA  
VHA  
OUT  
15V  
DESAT  
TRISTATE  
MODE  
BLANK  
INB  
INA  
VDD  
FAULT  
GND  
CTRISTATE  
CBLK  
IX2204  
4.2 Direct IGBT Drive  
-10V  
-10V  
15V  
VLA  
VLB  
OUTLA  
OUTHA  
VHA  
OUTLB  
OUTHB  
VHB  
OUTA  
OUTB  
15V  
DESAT  
TRISTATE  
MODE  
BLANK  
INB  
INA  
VDD  
FAULT  
GND  
IX2204  
4.3 Stack-Mode IGBT Drive with Desaturation Detection  
15V  
15V  
-10V  
VLA  
VLB  
OUTLB  
OUTHB  
VHB  
OUT  
OUTLA  
OUTHA  
VHA  
-10V  
15V  
DESAT  
TRISTATE  
MODE  
BLANK  
INB  
INA  
VDD  
FAULT  
GND  
CTRISTATE  
CBLK  
IX2204  
8
www.ixysic.com  
R03  
IX2204  
INTEGRATED  
C
IRCUITS  
D
IVISION  
5 Manufacturing Information  
5.1 Moisture Sensitivity  
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated  
Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to the  
latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product  
evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee  
proper operation of our devices when handled according to the limitations and information in that standard as well as  
to any limitations set forth in the information or standards referenced below.  
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced  
product performance, reduction of operable life, and/or reduction of overall reliability.  
This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according to  
the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033.  
Device  
Moisture Sensitivity Level (MSL) Rating  
IX2204NE  
MSL 1  
5.2 ESD Sensitivity  
This product is ESD Sensitive, and should be handled according to the industry standard  
JESD-625.  
5.3 Soldering Profile  
This product has a maximum body temperature and time rating as shown below. All other guidelines of  
J-STD-020 must be observed.  
Device  
Maximum Temperature x Time  
Maximum Reflow Cycles  
IX2204NE  
260°C for 30 seconds  
3
5.4 Board Wash  
IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to  
remove flux residue is acceptable, and the use of a short drying bake may be necessary. Chlorine-based or  
Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be  
used.  
R03  
www.ixysic.com  
9
IX2204  
INTEGRATED  
C
IRCUITS  
D
IVISION  
5.5 Mechanical Dimensions  
5.5.1 IX2204NE 16-Pin Narrow SOIC Package  
9.90 BSC  
(0.390 BSC)  
See Note 3  
Recommended PCB Pattern  
4.55  
2.40  
(0.094)  
(0.179)  
3.90 BSC  
(0.154 BSC)  
See Note 4  
6.00 0.50 BSC  
(0.236 0.020 BSC)  
5.50  
(0.217)  
0.20 TYP  
(0.008 TYP)  
0.31 - 0.51  
(0.012 - 0.020)  
0.60  
(0.024)  
1.25 min  
(0.049 min)  
1.27  
(0.05)  
1.70  
(0.059)  
0º - 8º  
1.27 TYP  
(0.05 TYP)  
1.70 max  
(0.067 max)  
0.80 0.50  
(0.031 0.020)  
0.00 - 0.15  
(0.000 - 0.006)  
DIMENSIONS  
mm  
(inches)  
3.86 - 4.57  
(0.152 - 0.180)  
1.68 - 2.41  
(0.066 - 0.095)  
NOTES:  
1. All dimensions are MM (IN)  
2. Reference JEDEC outline: MS-012 BC Rev F. (Thermal)  
3. Dimension does not include mold flash, protrusions,  
or gate burrs. Mold flash, protrusions, and gate burrs  
shall not exceed 0.15 (0.006) per side.  
4. Dimension does not include inter-lead flash, and  
protrusions shall not exceed 0.25 (0.010) per side.  
5.5.2 IX2204NETR Tape & Reel Packaging for 16-Pin Narrow SOIC Package (TBD)  
330.2 DIA.  
(13.00 DIA.)  
8.00 0.10  
(0.315 0.004)  
0.30 0.05  
(0.012 0.002)  
2.00 0.10 Note 3  
(0.079 0.004)  
4.00 Note 1  
1.75 0.10  
(0.069 0.004)  
∅ 1.5 +0.1 / -0.0  
A
(0.157)  
Top Cover  
Tape Thickness  
R 0.3 max  
0.102 MAX.  
(0.004 MAX.)  
B0=10.30 0.10  
(0.406 0.004)  
A
∅ 1.50 min  
A0=6.50 0.10  
(0.256 0.004)  
7.5 0.10 Note 3  
(0.295 0.004)  
16.0 0.3  
R 0.5 typ  
Embossed Carrier  
K0=2.10 0.1  
(0.083 0.004)  
NOTES:  
(0.63 0.012)  
1.10 Sprocket hole pitch cumulative tolerance 0.2  
2. Camber in compliance with EIA 481  
Section A-A  
Embossment  
Dimensions  
3. Pocket position relative to sprocket hole measured  
as true position of pocket, not pocket hole  
mm  
(inches)  
For additional information please visit our website at: www.ixysic.com  
IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make  
changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated  
Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its  
products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right.  
The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other  
applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe  
property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice.  
Specification: DS-IX2204-R03  
©Copyright 2014, IXYS Integrated Circuits Division  
All rights reserved. Printed in USA.  
11/11/2014  
10  
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