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IXGR50N60B2D1

型号：

IXGR50N60B2D1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

518 K

下载PDF手册
HiPerFASTTM IGBT  
ISOPLUS247TM  
IXGR 50N60B2  
IXGR 50N60B2D1  
VCES  
IC25  
VCE(sat)  
tfi(typ)  
= 600 V  
= 68 A  
= 2.2 V  
= 65 ns  
B2-Class High Speed IGBTs  
(Electrically Isolated Back Surface)  
Preliminary Data Sheet  
IXGR_B2  
IXGR_B2D1  
Symbol  
TestConditions  
Maximum Ratings  
ISOPLUS247  
(IXGR)  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
G
AB)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
C
E
G = Gate  
C = Collector  
E = Emitter  
IC25  
IC110  
IF110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
68  
36  
A
A
A
A
Features  
TC = 110°C (50N60B2D1 Diode)  
TC = 25°C, 1 ms  
39  
z
300  
DCB Isolated mounting tab  
Meets TO-247AD package Outline  
High current handling capability  
Latest generation HDMOSTM process  
MOS Gate turn-on  
z
z
z
z
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ VCE ≤ 600 V  
ICM = 100  
A
(RBSOA)  
PC  
TC = 25°C  
200  
W
- drive simplicity  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Applications  
TJM  
Tstg  
-55 ... +150  
z
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
z
VISOL  
50/60 Hz RMS, t = 1m  
5
2500  
V
power supplies  
AC motor speed control  
DC servo and robot drives  
DC choppers  
z
Weight  
g
z
z
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Advantages  
z
Easy assembly  
High power density  
Very fast switching speeds for high  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
z
z
frequency applications  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
3.0  
5.0  
V
VCE = VCES  
VGE = 0 V  
50N60B2  
50N60B2D1  
50  
650  
µA  
µA  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
2.2  
nA  
VCE(sat)  
IC = 40 A, VGE = 15 V  
Note 1  
1.8  
1.7  
V
V
TJ = 125°C  
© 2004 IXYS All rights reserved  
DS99144A(05/04)  
IXGR 50N60B2  
IXGR 50N60B2D1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
ISOPLUS 247 Outline  
IC = 40 A; VCE = 10 V,  
Note 1  
40  
55  
S
Cies  
Coes  
3500  
240  
280  
50  
pF  
pF  
pF  
pF  
VCE= 25 V, VGE = 0 V, f = 1 MHz  
50N60B2  
50N60B2D1  
Cres  
Qg  
140  
23  
nC  
nC  
nC  
Qge  
Qgc  
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES  
44  
Inductive load, TJ = 25°C  
IC = 40 A, VGE = 15 V  
td(on)  
tri  
td(off)  
tfi  
18  
25  
ns  
ns  
VCE = 480 V, RG = Roff = 5.0 Ω  
190 300 ns  
65 ns  
0.55 0.85 mJ  
Eoff  
td(on)  
tri  
18  
25  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 40 A, VGE = 15 V  
Eon  
td(off)  
tfi  
0.9  
mJ  
ns  
VCE = 480 V, RG = Roff = 5.0 Ω  
290  
140  
1.55  
ns  
Eoff  
mJ  
RthJ-DCB  
RthJC  
RthCS  
(Note 2)  
(Note 3)  
0.31  
0.15  
K/W  
0.62 K/W  
K/W  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = 60 A, VGE = 0 V,  
Note 1  
2.0  
1.39  
V
A
TJ = 150°C  
IRM  
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C  
VR = 100 V  
8.3  
trr  
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V  
35  
ns  
0.85 K/W  
RthJC  
Notes 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
2: RthJ-DCB is the thermal resistance junction-to-internal side of DCB substrate.  
3: RthJC is the thermal resistance junction-to-external side of DCB substrate.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
6,534,343  
6,583,505  
IXGR 50N60B2  
IXGR 50N60B2D1  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
320  
280  
240  
200  
160  
120  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
13V  
11V  
9V  
VGE = 15V  
11V  
13V  
7V  
9V  
6V  
5V  
7V  
5V  
40  
0
0.5  
0.5  
5
1
1.5  
2
2.5  
3
0
-50  
4
1
2
3
4
VC E - Volts  
5
6
7
8
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 15V  
13V  
11V  
9V  
VGE = 15V  
IC = 80A  
7V  
6V  
IC = 40A  
IC = 20A  
5V  
1
1.5  
VCE - Volts  
2
2.5  
3
-25  
0
25  
50  
75  
100 125 150  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
3.7  
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
200  
180  
160  
140  
120  
100  
80  
TJ = 25ºC  
IC = 80A  
40A  
20A  
TJ = 125ºC  
25ºC  
-40ºC  
60  
40  
20  
0
6
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
4.5  
5
5.5  
6
6.5  
VG E - Volts  
7
7.5  
8
8.5  
© 2004 IXYS All rights reserved  
IXGR 50N60B2  
IXGR 50N60B2D1  
Fig. 8. Dependence of Turn-Off  
Ene r gy on RG  
Fig. 7. Transconductance  
80  
70  
60  
50  
40  
30  
20  
10  
0
5
4.5  
4
TJ = 125ºC  
GE = 15V  
VCE = 480V  
TJ = -40ºC  
25ºC  
125ºC  
V
IC = 80A  
3.5  
3
2.5  
2
IC = 40A  
1.5  
1
IC = 20A  
0.5  
0
0
20 40 60 80 100 120 140 160 180 200  
5
10  
15  
20  
25 30  
35  
40  
45  
50  
I C - Amperes  
R G - Ohms  
Fig. 9. Dependence of Turn-Off  
Ene r gy on IC  
Fig. 10. Dependence of Turn-Off  
Energy on Temperature  
4
3.5  
3
4
3.5  
3
RG = 5Ω  
RG = 24.4 Ω - - - -  
VGE = 15V  
RG = 5Ω  
RG = 24.4Ω - - -  
IC = 80A  
VGE = 15V  
VCE = 480V  
VCE = 480V  
2.5  
2
2.5  
2
TJ = 125ºC  
IC = 40A  
1.5  
1
1.5  
1
TJ = 25ºC  
0.5  
0
0.5  
0
IC = 20A  
20  
30  
40 50  
I C - Amperes  
60  
70  
80  
25 35 45 55 65 75 85 95 105 115 125  
TJ - Degrees Centigrade  
Fig. 11. Dependence of Turn-Off  
Switching Time on RG  
Fig. 12. Dependence of Turn-Off  
Switching Time on IC  
400  
350  
300  
250  
200  
150  
100  
50  
1000  
500  
td(off)  
tfi  
RG = 5Ω  
td(off)  
t -  
- - - - - -  
- - - - -  
TJ = 125ºC  
fi  
VGE = 15V  
CE = 480V  
VGE = 15V  
V
VCE = 480V  
TJ = 125ºC  
IC = 20A  
IC = 40A  
IC = 80A  
TJ = 25ºC  
100  
0
5
10  
15  
20  
25 30  
R G - Ohms  
35  
40  
45  
50  
20  
30  
40 50  
I C - Amperes  
60  
70  
80  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
6,534,343  
6,583,505  
IXGR 50N60B2  
IXGR 50N60B2D1  
Fig. 13. Dependence of Turn-Off  
Switching Time on Temperature  
Fig. 14. Reverse-Bias  
Safe Operating Area  
350  
300  
250  
200  
150  
100  
50  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
td(off)  
t -  
- - - - -  
RG = 5Ω  
GE = 15V  
VCE = 480V  
fi  
V
IC = 20A  
IC = 40A  
IC = 80A  
º
TJ = 125 C  
RG = 10Ω  
dV/dT < 10V/ns  
0
25 35 45 55 65 75 85 95 105 115 125  
TJ - Degrees Centigrade  
100  
200  
300 400  
V C E - Volts  
500  
600  
Fig. 16. Capacitance  
Fig. 15. Gate Charge  
16  
14  
12  
10  
8
10000  
1000  
100  
VCE = 300V  
IC = 40A  
f = 1 MHz  
I
G = 10mA  
C
ies  
6
C
C
oes  
res  
4
2
0
10  
0
30  
60  
90  
120  
150  
0
5
10  
15  
20  
VC E - Volts  
25  
30  
35  
40  
Q G - nanoCoulombs  
Fig. 17. M axim um Trans ie nt The rm al Re s is tance  
0.70  
0.60  
0.50  
0.40  
0.30  
0.20  
0.10  
0.00  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2004 IXYS All rights reserved  
IXGR 50N60B2  
IXGR 50N60B2D1  
160  
A
140  
4000  
nC  
80  
TVJ= 100°C  
VR = 300V  
TVJ= 100°C  
VR = 300V  
A
120  
100  
80  
60  
40  
20  
0
3000  
2000  
1000  
0
60  
IF  
TVJ= 25°C  
TVJ=100°C  
IF=120A  
IF= 60A  
IF= 30A  
IRM  
Qr  
IF=120A  
IF= 60A  
IF= 30A  
40  
20  
0
TVJ=150°C  
A/µs  
-diF/dt  
0
1
2
V
100  
1000  
0
200 400 600 1000  
A/µs  
-diF/dt  
VF  
Fig. 19 Reverse recovery charge Qr  
versus -diF/dt  
Fig. 20 Peak reverse current IRM  
versus -diF/dt  
Fig. 18 Forward current IF versus VF  
2.0  
140  
20  
V
1.6  
µs  
TVJ= 100°C  
VR = 300V  
ns  
130  
VFR  
tfr  
trr  
1.5  
Kf  
15  
10  
5
1.2  
VFR  
tfr  
120  
110  
100  
90  
IF=120A  
IF= 60A  
IF= 30A  
1.0  
0.8  
0.4  
0.
IRM  
0.5  
Qr  
TVJ= 100°C  
IF = 60A  
0.0  
80  
0
A/µs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
°C  
A/µs  
diF/dt  
TVJ  
-diF/dt  
Fig. 21 Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 22 Recovery time trr versus -diF/dt  
Fig. 23 Peak forward voltage VFR and  
tfr  
versus diF/dt  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
0.1  
1
2
3
4
0.3073  
0.3533  
0.0887  
0.1008  
0.0055  
0.0092  
0.0007  
0.0399  
ZthJC  
0.01  
0.001  
DSEP 2x61-06A  
0.0001  
s
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 24 Transient thermal resistance junction to case  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
6,534,343  
6,583,505  
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