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5N65L-TF3T-T

型号：

5N65L-TF3T-T

品牌：

UTC[ Unisonic Technologies ]

页数：

7 页

PDF大小：

270 K

下载PDF手册
UNISONIC TECHNOLOGIES CO., LTD  
5N65  
Power MOSFET  
5A, 650V N-CHANNEL  
POWER MOSFET  
„
DESCRIPTION  
The UTC 5N65 is a high voltage power MOSFET designed to have  
better characteristics, such as fast switching time, low gate charge,  
low on-state resistance and high rugged avalanche characteristics.  
This power MOSFET is usually used in high speed switching  
applications at power supplies, PWM motor controls, high efficient DC  
to DC converters and bridge circuits.  
„
FEATURES  
* RDS(ON) < 2.4Ω @VGS = 10 V  
* Ultra Low Gate Charge ( Typical 15 nC )  
* Low Reverse Transfer Capacitance ( CRSS = Typical 6.5 pF )  
* Fast Switching Capability  
* Avalanche Energy Specified  
* Improved dv/dt Capability, High Ruggedness0  
„
SYMBOL  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
5N65L-TA3-T  
5N65L-TF3-T  
5N65L-TF1-T  
5N65L-TF2-T  
5N65L-TF3T-T  
5N65L-TM3-T  
5N65L-TN3-R  
Halogen Free  
1
2
3
S
S
S
S
S
S
S
5N65G-TA3-T  
5N65G-TF3-T  
5N65G-TF1-T  
5N65G-TF2-T  
5N65G-TF3T-T  
5N65G-TM3-T  
5N65G-TN3-R  
TO-220  
TO-220F  
TO-220F1  
TO-220F2  
TO-220F3  
TO-251  
G
G
G
G
G
G
G
D
D
D
D
D
D
D
Tube  
Tube  
Tube  
Tube  
Tube  
Tube  
TO-252  
Tape Reel  
Note: Pin Assignment: G: Gate  
D: Drain  
S: Source  
www.unisonic.com.tw  
1 of 7  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R502-592.D  
5N65  
Power MOSFET  
„
MARKING  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 7  
QW-R502-592.D  
www.unisonic.com.tw  
5N65  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
IAR  
RATINGS  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
650  
±30  
5
V
V
A
A
A
Avalanche Current (Note 2)  
Continuous Drain Current  
Pulsed Drain Current (Note 2)  
ID  
5
IDM  
20  
Single Pulsed (Note 3)  
Repetitive (Note 2)  
EAS  
210  
10  
Avalanche Energy  
mJ  
EAR  
Peak Diode Recovery dv/dt (Note 4)  
TO-220  
dv/dt  
4.5  
100  
V/ns  
TO-220F/TO-220F1  
TO-220F2/TO-220F3  
TO-251/TO-252  
Power Dissipation  
PD  
36  
W
54  
Junction Temperature  
Operation Temperature  
Storage Temperature  
TJ  
+150  
°C  
°C  
°C  
TOPR  
TSTG  
-55 ~ +150  
-55 ~ +150  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Pulse width limited by TJ(MAX)  
3. L = 16.8mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C  
4. ISD ≤ 5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C  
„
THERMAL DATA  
PARAMETER  
TO-220  
SYMBOL  
RATINGS  
62.5  
UNIT  
°C/W  
TO-220F/TO-220F1  
TO-220F2/TO-220F3  
TO-251 / TO-252  
TO-220  
Junction to Ambient  
Junction to Case  
θJA  
62.5  
160  
1.25  
TO-220F/TO-220F1  
TO-220F2/TO-220F3  
TO-251 / TO-252  
θJC  
3.47  
2.3  
°C/W  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 7  
QW-R502-592.D  
www.unisonic.com.tw  
5N65  
Power MOSFET  
„
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
BVDSS  
IDSS  
VGS =0V, ID = 250μA  
650  
2.0  
V
VDS =650V, VGS = 0V  
VGS =30V, VDS = 0V  
1
μA  
Forward  
Reverse  
100  
-100  
Gate-Source Leakage Current  
IGSS  
nA  
VGS =-30V, VDS = 0V  
△BVDSS/△TJ  
Breakdown Voltage Temperature Coefficient  
ON CHARACTERISTICS  
Gate Threshold Voltage  
Static Drain-Source On-State Resistance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
ID =250μA, Referenced to 25℃  
0.6  
V/°C  
VGS(TH)  
RDS(ON)  
VDS =VGS, ID = 250μA  
4.0  
V
VGS =10V, ID = 2.5A  
2.0 2.4  
Ω
CISS  
COSS  
CRSS  
515 670 pF  
VDS = 25V, VGS = 0V,  
f = 1.0MHz  
Output Capacitance  
55  
72  
pF  
pF  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
6.5 8.5  
tD(ON)  
tR  
tD(OFF)  
tF  
10  
42  
38  
30  
90  
85  
ns  
ns  
ns  
Turn-On Rise Time  
VDD = 325V, ID =5A,  
RG = 25Ω (Note 1, 2)  
Turn-Off Delay Time  
Turn-Off Fall Time  
46 100 ns  
Total Gate Charge  
QG  
15  
2.5  
6.6  
19  
nC  
nC  
nC  
VDS = 520 V, ID = 5A,  
Gate-Source Charge  
QGS  
QGD  
VGS = 10 V (Note 1, 2)  
Gate-Drain Charge  
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  
Drain-Source Diode Forward Voltage  
Maximum Continuous Drain-Source Diode  
Forward Current  
VSD  
VGS = 0 V, IS = 5A  
1.4  
5
V
A
IS  
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
20  
A
Reverse Recovery Time  
trr  
300  
2.2  
ns  
VGS = 0 V, IS =5A,  
dIF / dt = 100 A/μs (Note 1)  
Reverse Recovery Charge  
QRR  
μC  
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%  
2. Essentially independent of operating temperature  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 7  
QW-R502-592.D  
www.unisonic.com.tw  
5N65  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS  
+
D.U.T.  
VDS  
-
+
-
L
RG  
Driver  
VDD  
* dv/dt controlled by RG  
* ISD controlled by pulse period  
* D.U.T.-Device Under Test  
Same Type  
as D.U.T.  
VGS  
P. W.  
VGS  
(Driver)  
Period  
D=  
P.W.  
Period  
10V  
=
VGS  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
(D.U.T.)  
VDD  
Body Diode  
Forward Voltage Drop  
Peak Diode Recovery dv/dt Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 7  
QW-R502-592.D  
www.unisonic.com.tw  
5N65  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS (Cont.)  
Switching Test Circuit  
Switching Waveforms  
Gate Charge Test Circuit  
Gate Charge Waveform  
L
VDS  
BVDSS  
IAS  
RD  
VDD  
ID(t)  
VDS(t)  
VDD  
10V  
D.U.T.  
tp  
Time  
tp  
Unclamped Inductive Switching Test Circuit  
Unclamped Inductive Switching Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 7  
QW-R502-592.D  
www.unisonic.com.tw  
5N65  
Power MOSFET  
„
TYPICAL CHARACTERISTICS  
Transfer Characteristics  
On-Region Characteristics  
VGS  
Top:  
Bottorm:4.5V  
5.0V  
101  
101  
100  
10-1  
5V  
100  
25℃  
10-1  
*Notes:  
*Notes:  
1. 250µs Pulse Test  
4.5V  
1. VDS=40V  
2. 250µs Pulse Test  
2. TC=25℃  
10-2  
10-1  
100  
101  
2
4
6
8
10  
Gate-Source Voltage, VGS (V)  
Drain-Source Voltage, VDS (V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
7 of 7  
QW-R502-592.D  
www.unisonic.com.tw  
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