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PXAC260622SC

型号：

PXAC260622SC

品牌：

INFINEON[ Infineon ]

页数：

8 页

PDF大小：

1252 K

下载PDF手册
PXAC260622SC  
Thermally-Enhanced High Power RF LDMOS FET  
75 W, 28 V, 2496 – 2690 MHz  
Description  
PXAC260622SC  
Package H-37248H-4  
with formed leads  
The PXAC260622SC is a 75-watt LDMOS FET with an asymetric  
design for use in multi-standard cellular power amplifier applications  
in the 2496 to 2690 MHz frequency band.It features dual-path design,  
input and output matching, and a thermally-enhanced, surface-mount  
package with earless flange. Manufactured with Infineon's advanced  
LDMOS process, this device provides excellent thermal performance  
and superior reliability.  
Features  
Single-carrier WCDMA Drive-up  
•ꢀ Broadband internal input and output matching  
•ꢀ Asymmetrical Doherty design  
VDD = 28 V, IDQ = 115 mA, ƒ = 2690 MHz,  
3GPP WCDMA signal, PAR = 10 dB,  
3.84 MHz BW  
- Main: 25 W Typ (P  
- Peak: 50 W Typ (P  
)
)
1dB  
1dB  
24  
20  
16  
12  
8
75  
50  
25  
0
•ꢀ Typical pulsed performance in a Doherty configura-  
tion, at 39.5 dB P  
10 µs, 10% DC  
- Gain = 16dB  
, 2690 MHz, 28 V, with pulse  
OUT  
Efficiency  
- Efficiency = 45%  
•ꢀ Integrated ESD protection  
•ꢀ Pb-free and RoHS compliant  
Gain  
•ꢀ Capable of handling 10:1 VSWR @28 V, 50 W  
-25  
-50  
-75  
PAR @ 0.01% CCDF  
(CW) output power  
4
0
pxfc260622sc_g1  
27  
31  
35  
39  
43  
47  
Average Output Power (dBm)  
RF Characteristics  
Single-carrier WCDMA Specifications (device tested in Infineon Doherty test fixture with straight leads)  
= 28 V, I = 115 mA, P = 8.9 W avg, ƒ = 2690 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average =  
V
DD  
DQ  
OUT  
1
10 dB @ 0.01% CCDF  
Characteristic  
Gain  
Symbol  
Min  
14.5  
40  
Typ  
15.8  
42  
Max  
—
Unit  
dB  
G
ps  
Drain Efficiency  
hD  
—
%
Adjancent Channel Power Ratio  
All published data at T = 25°C unless otherwise indicated  
ACPR  
—
–30  
–27  
dBc  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 8  
Rev. 02.1, 2015-06-03  
PXAC260622SC  
DC Characteristics  
Characteristic  
Conditions  
Symbol  
Min  
65  
—
Typ  
—
Max  
—
Unit  
V
Drain-source Breakdown Voltage  
Drain Leakage Current  
V
GS  
= 0 V, I = 10 mA  
V
(BR)DSS  
DS  
V
V
= 28 V, V = 0 V  
I
I
—
1
µA  
µA  
µA  
W
DS  
DS  
GS  
DSS  
DSS  
GSS  
= 63 V, V = 0 V  
—
—
10  
1.0  
—
GS  
Gate Leakage Current  
V
GS  
= 10 V, V = 0 V  
I
—
—
DS  
On-state Resistance  
(main)  
(peak)  
V
GS  
= 10 V, V = 0.1 V  
R
—
0.50  
0.25  
2.6  
1.4  
DS  
DS(on)  
DS(on)  
V
GS  
= 10 V, V = 0.1 V  
R
—
—
W
DS  
Operating Gate Voltage (main)  
(peak)  
V
= 28 V, I  
= 115 mA  
= 0 A  
V
GS  
2.0  
—
3.0  
—
V
DS  
DS  
DQ  
DQ  
V
= 28 V, I  
V
GS  
V
Maximum Ratings  
Parameter  
Symbol  
Value  
65  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
Operating Voltage  
V
DSS  
V
–6 to +10  
0 to +32  
225  
V
GS  
DD  
V
V
Junction Temperature  
Storage Temperature Range  
T
J
°C  
T
STG  
–65 to +150  
0.962  
°C  
Thermal Resistance (main, T  
Thermal Resistance (peak, T  
= 70°C, 55 W CW)  
= 70°C, 55 W CW)  
R
°C/W  
°C/W  
CASE  
qJC  
qJC  
R
0.499  
CASE  
Ordering Information  
Type and Version  
Order Code  
Package Description  
Shipping  
PXAC260622SC V1 R250  
PXAC260622SCV1R250XTMA1  
H-37248H-4, earless flange  
Tape & Reel, 250 pcs  
Data Sheet  
2 of 8  
Rev. 02.1, 2015-06-03  
PXAC260622SC  
Typical Performance (data taken in a production test fixture)  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 115 mA, ƒ = 2690 MHz,  
3GPP WCDMA signal, PAR = 10 dB,  
BW = 3.84 MHz  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 115 mA  
3GPP WCDMA signal, PAR = 10 dB,  
BW 3.84 MHz  
-10  
-20  
-30  
-40  
-50  
-60  
-70  
70  
60  
50  
40  
30  
20  
10  
-20  
-25  
-30  
-35  
-40  
2495MHz ACPL  
2495MHz ACPU  
2570MHz ACPL  
2570MHz ACPU  
2690MHz ACPL  
2690MHz ACPU  
ACPU  
ACPL  
Efficiency  
pxfc260622sc_g3  
pxfc260622sc_g2  
28  
32  
36  
40  
44  
48  
27  
31  
35  
39  
43  
47  
Average Output Power (dBm)  
Output Power (dBm)  
CW Performance  
at various VDD  
CW Performance  
VDD = 28 V, IDQ = 115mA  
IDQ = 115 mA, ƒ = 2690 MHz  
2495MHz Gain  
2570MHz Gain  
2690MHz Gain  
2495MHz Eff  
2570MHz Eff  
24V Gain  
28V Gain  
32V Gain  
24V Eff  
28V Eff  
32V Eff  
22  
20  
18  
16  
14  
12  
10  
70  
22  
20  
18  
16  
14  
12  
10  
70  
60  
50  
40  
30  
20  
10  
Efficiency  
Efficiency  
2690MHz Eff  
60  
50  
40  
30  
20  
10  
Gain  
Gain  
pxfc260622sc_g5  
pxfc260622sc_g4  
27  
31  
35  
39  
43  
47  
51  
29  
33  
37  
41  
45  
49  
53  
Output Power (dBm)  
Output Power (dBm)  
Data Sheet  
3 of 8  
Rev. 02.1, 2015-06-03  
PXAC260622SC  
Typical Performance (cont.)  
Small Signal CW  
Gain & Input Return Loss  
VDD = 28 V, IDQ = 115 mA  
20  
-2  
18  
-6  
Gain  
16  
-10  
-14  
-18  
-22  
-26  
14  
12  
10  
8
IRL  
pxfc260622sc_g6  
2300 2400 2500 2600 2700 2800 2900  
Frequency (MHz)  
Load Pull Performance  
Main Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, I  
= 115 mA  
DQ  
P
1dB  
Max Output Power  
Max Drain Efficiency  
Zs  
[W]  
Zl  
[W]  
Zl  
[W]  
Freq  
[MHz]  
Gain  
[dB]  
P
P
Gain  
[dB]  
P
P
OUT  
hD  
hD  
OUT  
OUT  
OUT  
[dBm]  
[W]  
27.1  
26.7  
27.8  
[dBm]  
[W]  
20.8  
20.0  
21.4  
[%]  
[%]  
2496  
2570  
2690  
16.4 – j12.3  
18.0 – j11.1  
9.8 – j12.0  
8.9 – j11.8  
19.8  
19.4  
19.2  
44.3  
55.1  
54.1  
56.0  
10.9 – j5.9  
9.5 – j6.0  
8.0 – j8.4  
21.6  
21.4  
20.9  
43.2  
61.3  
60.4  
61.5  
44.3  
43.0  
18.3 – j 0.1 10.1 – j13.5  
44.4  
43.3  
Peak Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, V  
= 1.4 V , I  
= 115 mA  
DQ  
GSPEAK  
P
1dB  
Max Output Power  
Max Drain Efficiency  
Zs  
[W]  
Zl  
[W]  
Zl  
[W]  
Freq  
[MHz]  
Gain  
[dB]  
P
P
[W]  
Gain  
[dB]  
P
P
OUT  
[W]  
hD  
hD  
OUT  
OUT  
OUT  
[dBm]  
[dBm]  
[%]  
[%]  
2495 17.6 – j14.7 5.3 – j11.1  
2570 19.7 – j11.1 6.2 – j13.2  
14.7  
15.5  
14.1  
47.7  
59  
59.4  
56.8  
57.8  
7.8 – j7.1  
7.0 – j7.4  
6.2 – j10.5  
15.6  
15.6  
15.1  
46.2  
42  
67.6  
65.5  
64.8  
47.4  
55  
45.7  
37  
2690  
19.0 – j0.5  
6.1 – j15.1  
47.4  
55  
45.9  
38  
Data Sheet  
4 of 8  
Rev. 02.1, 2015-06-03  
PXAC260622SC  
Reference Circuit , 2496 – 2690 MHz  
MEGTRON6_20 MIL  
(61)  
MEGTRON6, 0.508  
(105)  
VDD  
VGSPEAK  
C210  
C107  
C209  
C111 C112  
C106  
C105  
C201  
C205 C206 C207 C208  
C101  
R101  
C220  
C221  
R103  
C102  
C202  
C203  
RF_  
OUT  
RF_  
IN  
U1  
C111  
C103  
C222  
C204  
C104  
R102  
C214  
C213 C215  
C108  
VDD  
VGSMAIN  
C216  
C109  
C110  
C217  
C218  
C219  
PXAC260622SC_OUT_05  
x a c 2 6 0 6 2 2 s c _ C D _ 0 4 - 0 6 - 2 0 1 5  
PXAC260622SC_IN_05A  
p
Reference circuit assembly diagram (not to scale)  
Data Sheet  
5 of 8  
Rev. 02.1, 2015-06-03  
PXAC260622SC  
Reference Circuit (cont.)  
Reference Circuit Assembly  
DUT  
PXAC260622SC V1  
Test Fixture Part No.  
PCB  
LTA/PXAC260062SC V1  
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 2496 – 2690 MHz  
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower  
Components Information  
Component  
Input  
Description  
Manufacturer  
P/N  
C101, C102, C103, C104 Capacitor, 8.2 pF  
ATC  
ATC800A8R2JW150XB  
GRM32ER71H475KA88L  
C105, C106, C107,  
C108, C109, C110  
Capacitor, 4.7 µF  
Murata Electronics North America  
C111  
Capacitor, 0.5 pF  
Resistor, 10 W  
Resistor, 50 W  
Hybrid Coupler  
ATC  
ATC800A0R5CW150XB  
ERJ-3GEYJ100V  
C16A50Z4  
R101, R102  
R103  
Panasonic Electronic Components  
Richardson  
Anaren  
U1  
X3C25P1-04S  
Output  
C201, C202, C203, C204 Capacitor, 8.2 pF  
ATC  
ATC800A8R2JW150XB  
GRM32ER71H475KA88L  
C205, C206, C207,  
C208, C209, C210,  
C211, C212, C213,  
C214, C215, C216,  
C217, C218, C219  
Capacitor, 4.7 µF  
Murata Electronics North America  
C220  
C221  
C222  
Capacitor, 1.5 pF  
Capacitor, 1.0 pF  
Capacitor, 0.6 pF  
ATC  
ATC  
ATC  
ATC800A1R5CW150XB  
ATC800A1R0CW150XB  
ATC800A0R6CW150XB  
Pinout Diagram (top view)  
S
Peak  
Main  
Pin Description  
D1  
D2  
D1 Drain device 1 (Peak)  
D2 Drain device 2 (Main)  
G1 Gate device 1 (Peak)  
G2 Gate device 2 (Main)  
S Source (flange)  
G1  
G2  
Lead connections for PXAC260622SC  
Data Sheet  
6 of 8  
Rev. 02.1, 2015-06-03  
PXAC260622SC  
Package Outline Specifications  
Package H-37248H-4 with Formed Leads  
(8.89  
[.350])  
D
2X 45° x .64  
1.49±0.25  
[.059±.010]  
[.025]  
(5.08  
[.200])  
+0.25  
1.00  
-0.10  
+.010  
.039  
[
]
-.004  
D1  
D2  
14.75±0.50  
[.581±.020]  
9.78  
[.385]  
C
L
C
L
G1  
G2  
+0.38  
-0.13  
4X R0.51  
+.015  
-.005  
R.020  
[
]
C
L
4X 3.81  
[.150]  
4X 5°±3°  
4X 0.13±0.08  
[.005±.003] SPH  
2X 12.70  
[.500]  
3.76±0.25  
[.148±.010]  
19.81±0.20  
[.780±.008]  
(1.02  
[.040])  
H-37248H-4_GW_po_02_12-03-2012  
20.57  
[.810]  
S
Diagram Notes—unless otherwise specified:  
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.  
2. Primary dimensions are mm. Alternate dimensions are inches.  
3. All tolerances 0.127 [.005] unless specified otherwise.  
4. Pins: D1, D2 – drains; G1, G2 – gates; S – source.  
5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch].  
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].  
Find the latest and most complete information about products and packaging at the Infineon Internet page  
http://www.infineon.com/rfpower  
Data Sheet  
7 of 8  
Rev. 02.1, 2015-06-03  
PXAC260622SC V1  
Revision History  
Revision  
Date  
Data Sheet Type  
Advance  
Page  
Subjects (major changes since last revision)  
01  
02  
2014-04-03  
2015-04-06  
All  
Data Sheet reflects advance specification for product development  
Production  
All  
All  
Data Sheet reflects released product specification  
Revised all data and includes updated final specs, typical performance graphs, loadpull, refer-  
ence circuit, package outline  
02.1  
2015-06-03  
Production  
1
Updated single-carrier WCDMA test spec  
We Listen toYour Comments  
Any information within this document that you feel is wrong, unclear or missing at all?  
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to:  
(highpowerRF@infineon.com)  
To request other information, contact us at:  
+1 877 465 3667 (1-877-GO-LDMOS) USA  
or +1 408 776 0600 International  
Edition 2015-06-03  
Published by  
Infineon Technologies AG  
85579 Neubiberg, Germany  
© 2014 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.  
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the  
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,  
including without limitation, warranties of non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact the nearest  
Infineon Technologies Office (www.infineon.com/rfpower).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in question,  
please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-  
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device  
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be  
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be endangered.  
Data Sheet  
8 of 8  
Rev. 02.1, 2015-06-03  
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